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Institution

STMicroelectronics

CompanyGeneva, Switzerland
About: STMicroelectronics is a company organization based out in Geneva, Switzerland. It is known for research contribution in the topics: Transistor & Signal. The organization has 17172 authors who have published 29543 publications receiving 300766 citations. The organization is also known as: SGS-Thomson & STM.


Papers
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Patent
17 Dec 1992
TL;DR: In this paper, an ESD protection circuit and a structure for integrated circuit devices uses a lateral NPN transistor to provide a low resistance discharge path for ESD transient voltages.
Abstract: An ESD protection circuit and structure for integrated circuit devices uses a lateral NPN transistor to provide a low resistance discharge path for ESD transient voltages. A preferred structure also includes a modification to an N-channel output drive transistor to eliminate the parasitic bipolar transistor that induces snapback.

52 citations

Proceedings ArticleDOI
19 Mar 2015
TL;DR: A 2.4GHz WuRX with -97dBm sensitivity for 10kb/s and 103 BER, operated from a single 0.5V supply is presented, with a cascaded multilayer N-path filter approach offering superb interferer rejection while avoiding expensive off-chip resonant components such as BAWs or crystals.
Abstract: Wake-up receivers are considered as practical solutions to enable ultra-low-power (ULP) wireless sensor nodes (WSN) in a dense environment A low data-rate (<∼50kb/s) wake-up receiver (WuRX) should facilitate a long sensor lifetime, optimal network latency and strong interferer resilience Moreover, such sensor nodes should be ultra-low-cost compact objects This paper presents a 24GHz WuRX with −97dBm sensitivity for 10kb/s and 103 BER, operated from a single 05V supply On-off keying (OOK) modulation has been chosen for its energy efficiency, with a cascaded multilayer N-path filter approach offering superb interferer rejection while avoiding expensive off-chip resonant components such as BAWs or crystals

52 citations

Patent
22 Apr 2010
TL;DR: In this paper, the authors present a system and method for packet messaging and synchronization through a packet based display interface, which includes using a multiple packet transport protocols, translating packet messages between protocols and achieving time code synchronization with a packet protocol between multiple devices in a multimedia network.
Abstract: System and method for packet messaging and synchronization through a packet based display interface includes using a multiple packet transport protocols, translating packet messages between protocols and achieving time code synchronization with a packet protocol between multiple devices in a multimedia network. A packet based display interface includes a dual data transport module to communicate packet messages using first and second packet transport protocols across a bidirectional link and a media transport module to communicate video packets across a unidirectional link. A method for communicating packet messages between source and slave devices in a multimedia network includes translating messages between different packet transport protocols. An apparatus for synchronizing a sink device to a source device includes a counter module configured to be adjusted based on a received source global time code value and a transport module to transmit a sink global time code value to the source device.

52 citations

Journal ArticleDOI
TL;DR: In this article, the dielectric layer consists of a substoichiometric SiO x (x thin film, annealed at 1100°C for 1 h to induce the separation of the Si and SiO 2 phases, with the formation of silicon nanocrystals (nc) embedded in the insulating matrix.
Abstract: We have fabricated MOS devices where the dielectric layer consists of a substoichiometric SiO x (x thin film , annealed at 1100°C for 1 h to induce the separation of the Si and SiO 2 phases, with the formation of silicon nanocrystals (nc) embedded in the insulating matrix. We have studied the electroluminescence (EL) properties of such devices as a function of the current density and of the temperature. We have evaluated the excitation cross section of Si nc under electrical pumping at room temperature and at low temperature (12 K ) . Moreover, we have used the experimental EL intensities and decay times to evaluate the radiative rate as a function of the temperature.

52 citations

Patent
03 Oct 1991
TL;DR: In this paper, a polyphase dc motor with a plurality of "Y" connected stator coils has circuitry for unambiguously determining the actual instantaneous position of the rotor of the motor, circuitry for determining a desired rotor position prior to executing a desired commutation sequence, and circuitry for executing the desired operation when the circuit for determining the rotor position detects that the rotor is actually in the desired position.
Abstract: A circuit for operating a polyphase dc motor, for example of the type having a plurality of "Y" connected stator coils, has circuitry for unambiguously determining the actual instantaneous position of the rotor of the motor, circuitry for determining a desired rotor position precedent to executing a desired commutation sequence, and circuitry for executing the desired commutation sequence when the circuit for determining the actual instantaneous position of the rotor detects that the rotor is actually in the desired rotor position. The circuitry for unambiguously determining the actual instantaneous position of the rotor includes a back emf amplifier switchably connected to at least one floating coil, and circuitry for determining when the voltage received by the back emf amplifier crosses a reference voltage from a predetermined direction. In one embodiment, the circuit, includes mask circuitry for inhibiting the reference voltage crossing detection circuitry for a predetermined time after a change in the commutation sequence. The mask circuitry includes clocked up and first and second down counters, the second down counter being inhibited to be clocked until the first down counter has reached a predetermined count, and the reference voltage crossing circuitry being inhibited until at least the second down counter has completed its count. When a reference voltage crossing is detected, the count of the up counter is loaded into both the first and second down counters, then the up counter is reset to begin a new commutation period count.

52 citations


Authors

Showing all 17185 results

NameH-indexPapersCitations
Bharat Bhushan116127662506
Albert Polman9744542985
G. Pessina8482830807
Andrea Santangelo8388629019
Paolo Mattavelli7448219926
Daniele Ielmini6836716443
Jean-François Carpentier6245914271
Robert Henderson5844013189
Bruce B. Doris5660412366
Renato Longhi551778644
Aldo Romani5442511513
Paul Muralt5434412694
Enrico Zanoni5370513926
Gaudenzio Meneghesso5170312567
Franco Zappa502749211
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
202225
2021560
2020798
2019952
2018948
2017781