STMicroelectronics

About: STMicroelectronics is a company organization based out in Geneva, Switzerland. It is known for research contribution in the topics: Transistor & Signal. The organization has 17172 authors who have published 29543 publications receiving 300766 citations. The organization is also known as: SGS-Thomson & STM.

Memory including a performance test circuit

Abstract: A memory includes a plurality of memory cells each including a true data input connected to a true bit line and complementary data input connected to a complementary bit line, and two inverters connected head-to-tail firstly to the true data input and secondly to the complementary data input. The memory also includes a test circuit includes a plurality of test cells, each test cell includes a true data input connected to a complementary data input of the preceding test cell and a complementary data input connected to the true data input of the following test cell, the complementary data input of the last test cell being connected to the true data input of the first test cell, each test cell comprising a first inverter connected between the true data input and the complementary data input. The looped chain thus formed propagates a signal whose period is a function of the performance of the storage cells.

Operation in very close coupling of an electromagnetic transponder system

Abstract: A method and a system of data transmission between a terminal for generating an electromagnetic field and a transponder, the terminal and the transponder each including an oscillating circuit forming an antenna, and the transponder including an electronic circuit adapted to absorbing and giving back power provided by the terminal field, the oscillating circuits of the transponder and of the terminal being capable of transmitting radio-electric signals of determined frequency, this method including causing a detuning of at least one of the oscillating circuits with respect to the determined frequency when the transponder and the terminal are very close to each other.

A 3 GHz Fractional All-Digital PLL With a 1.8 MHz Bandwidth Implementing Spur Reduction Techniques

Abstract: Digital implementation of analog functions is becoming attractive in CMOS ICs, given the low supply voltage of ultra-scaled processes. Particularly, all-digital PLLs are being considered for RF frequency synthesis. However, they suffer from intrinsic deficiencies making them inferior to traditional analog solutions. The investigation in this paper shows that in-band output spurs, the major shortcoming of wideband divider-less ADPLLs with respect to analog fractional PLLs, are intrinsic and due to the finite resolution of the time-to-digital converter (TDC), even assuming perfect quantization and linearity. Moreover, even if the conceptual spur level is arbitrarily reduced by increasing the TDC resolution, TDC nonlinearities can cause a significant spur re-growth. This paper proposes two techniques to reduce the gap between all-digital and analog implementations of wideband fractional PLLs. These techniques have been applied to a 3 GHz ADPLL, whose bandwidth is programmable from 300 kHz to 1.8 MHz, operating from a 25 MHz reference signal. The test chip features more than 10 dB of worst in-band spur reduction when both corrections are active, for a worst-case in-band spur of -45 dBc at a bandwidth of 1.8 MHz and an in-band noise floor of -101 dBc/Hz. The chip core occupies 0.4 mm2 in 65 nm CMOS technology, and consumes less than 10 mW from a 1.2 V supply.

New non-volatile Logic based on Spin-MTJ

Abstract: As the minimum dimensions of complementary metal oxide semiconductor (CMOS) transistors shrink down to 90 nm and below, some physical obstacles have been observed which prevent rigidly this miniaturization. For example, high transistor leakage currents lead to an important increase of the 'idle' power consumption of CMOS memory arrays. Many nanodevices are therefore the subject of research and development to help CMOS technology continue to down-scale by Moore's law. Among them, the magnetic tunnel junction (MTJ) is one of the most promising candidates, because its non-volatility offers the possibility to power off the chip to greatly reduce the 'idle' energy dissipation of conventional CMOS circuits. Moreover, its resistance value property (several kΩ), compatible with CMOS transistor conductivity, allows its states to be sensed easily with CMOS circuits. The novel spin transfer torque (STT) writing approach, which has been recently introduced and developed, reduces significantly the switching energy and data disturbance when compared with the conventional MTJ writing approach. It makes the MTJ technology much more suitable than other nanodevices for commercial applications. In this paper, hybrid STT-based MTJ (spin-MTJ)/CMOS logic circuits and some design techniques are proposed based on STMicroelectronics 90 nm CMOS technology and the published Hitachi spin-MTJ technology. A first prototype has been simulated and evaluated.

A SiGe Terahertz Heterodyne Imaging Transmitter With 3.3 mW Radiated Power and Fully-Integrated Phase-Locked Loop

Abstract: A high-power 320 GHz transmitter using 130 nm SiGe BiCMOS technology ( $f_{T}/f_{\max} =$ 220/280 GHz) is reported. This transmitter consists of a 4 × 4 array of radiators based on coupled harmonic oscillators. By incorporating a signal filter structure called return-path gap coupler into a differential self-feeding oscillator, the proposed 320 GHz radiator simultaneously maximizes the fundamental oscillation power, harmonic generation, as well as on-chip radiation. To facilitate the TX-RX synchronization of a future terahertz (THz) heterodyne imaging chipset, a fully-integrated phase-locked loop (PLL) is also implemented in the transmitter. Such on-chip phase-locking capability is the first demonstration for all THz radiators in silicon. In the far-field measurement, the total radiated power and EIRP of the chip is 3.3 mW and 22.5 dBm, respectively. The transmitter consumes 610 mW DC power, which leads to a DC-to-THz radiation efficiency of 0.54%. To the authors' best knowledge, this work presents the highest radiated power and DC-to-THz radiation efficiency in silicon-based THz radiating sources.