STMicroelectronics

About: STMicroelectronics is a company organization based out in Geneva, Switzerland. It is known for research contribution in the topics: Transistor & Signal. The organization has 17172 authors who have published 29543 publications receiving 300766 citations. The organization is also known as: SGS-Thomson & STM.

Backside contact for touchchip

Abstract: A contact is formed within an active region of a substrate at the edge of a die, preferably within the first metallization level in the active region of the substrate. An opening having sloped sidewalls is then etched into the back side of the substrate, exposing a portion of the active region contact. An interconnect is formed on the opening sidewall to connect the active region contact with a die contact pad on the backside surface of the substrate. The active region contact preferably spans a boundary between two die, with the opening preferably etched across the boundary to permit inter-connects on opposing sidewalls of the opening to each contact the active region contact within different die, connecting the active region contact to die contact pads on different dice. The dice are then separated along the boundary, through the active region contact which becomes two separate active region contacts. By forming a shared contact opening spanning two dice, the backside contact is formed around the die edge and the backside surface area necessary for the contact opening is minimized. The backside contact allows direct placement of the integrated circuit die on contacts within the packaging, such as a ball grid array, eliminating the need for wire bonds. The need for a pad etch through passivation material overlying active devices on the front side of the die is also eliminated, and no mask levels are added for the devices formed on the front side.

Bonded planar double-metal-gate NMOS transistors down to 10 nm

Abstract: Thanks to bonding, metal-gate etching without any out-of-gate Si consumption, and self-aligned transfer of alignment marks, we have processed the first 10-nm-gate-length DG MOS transistors with metal gates. These devices exhibit excellent short-channel effects control and high-performance characteristics. Their saturation current is very sensitive to the access resistance increase caused by film thinning required to respect the scaling rules. Moreover, their electrical properties can be tuned between LSTP and HP by independently biasing the two gates.

An Advanced Bio-Inspired PhotoPlethysmoGraphy (PPG) and ECG Pattern Recognition System for Medical Assessment

Abstract: Physiological signals are widely used to perform medical assessment for monitoring an extensive range of pathologies, usually related to cardio-vascular diseases. Among these, both PhotoPlethysmoGraphy (PPG) and Electrocardiography (ECG) signals are those more employed. PPG signals are an emerging non-invasive measurement technique used to study blood volume pulsations through the detection and analysis of the back-scattered optical radiation coming from the skin. ECG is the process of recording the electrical activity of the heart over a period of time using electrodes placed on the skin. In the present paper we propose a physiological ECG/PPG "combo" pipeline using an innovative bio-inspired nonlinear system based on a reaction-diffusion mathematical model, implemented by means of the Cellular Neural Network (CNN) methodology, to filter PPG signal by assigning a recognition score to the waveforms in the time series. The resulting "clean" PPG signal exempts from distortion and artifacts is used to validate for diagnostic purpose an EGC signal simultaneously detected for a same patient. The multisite combo PPG-ECG system proposed in this work overpasses the limitations of the state of the art in this field providing a reliable system for assessing the above-mentioned physiological parameters and their monitoring over time for robust medical assessment. The proposed system has been validated and the results confirmed the robustness of the proposed approach.

A 24GS/s 6b ADC in 90nm CMOS

Abstract: This paper presents a 24 GS/s 6 b ADC in 90 nm CMOS with the highest ENOB up to 12 GHz input frequency and lowest power consumption of 1.2 W compared to ADCs with similar performance. It uses an interleaved architecture of SAR type self-calibrating converters operating from 1 V supply combined with an array of 2.5 V T/Hs with delay, gain and offset-calibration capability.

A textile based capacitive pressure sensor

Abstract: This paper introduces an approach for decoding the pressure information exerted over a broad piece of fabric by means of capacitive sensing. The proposed sensor includes a distributed passive array of capacitors (i.e. an array where no active elements are involved), whose capacitance depends on the pressure exerted on the textile surface, and an electronic system that acquire and process the subsequent capacitance variations. Capacitors can be made in different ways, though, in our demonstrator they have been implemented between rows and columns of conductive fibers patterned on the two opposite sides of an elastic synthetic foam. Measures performed over a prototype has been demonstrated the reliability of the approach by detecting pressure images at 3 F/s and by measuring capacitances as low as hundreds of fF spaced apart at meters of distance.