STMicroelectronics

About: STMicroelectronics is a company organization based out in Geneva, Switzerland. It is known for research contribution in the topics: Transistor & Signal. The organization has 17172 authors who have published 29543 publications receiving 300766 citations. The organization is also known as: SGS-Thomson & STM.

A SPAD-Based QVGA Image Sensor for Single-Photon Counting and Quanta Imaging

Abstract: A CMOS single-photon avalanche diode (SPAD)-based quarter video graphics array image sensor with 8- $\mu \text{m}$ pixel pitch and 26.8% fill factor (FF) is presented. The combination of analog pixel electronics and scalable shared-well SPAD devices facilitates high-resolution, high-FF SPAD imaging arrays exhibiting photon shot-noise-limited statistics. The SPAD has 47 counts/s dark count rate at 1.5 V excess bias (EB), 39.5% photon detection probability (PDP) at 480 nm, and a minimum of 1.1 ns dead time at 1 V EB. Analog single-photon counting imaging is demonstrated with maximum 14.2-mV/SPAD event sensitivity and 0.06e− minimum equivalent read noise. Binary quanta image sensor (QIS) 16-kframes/s real-time oversampling is shown, verifying single-photon QIS theory with $4.6\times $ overexposure latitude and 0.168e− read noise.

Developments for radiation hard silicon detectors by defect engineering—results by the CERN RD48 (ROSE) Collaboration

Abstract: This report summarises the final results obtained by the RD48 collaboration. The emphasis is on the more practical aspects directly relevant for LHC applications. The report is based on the comprehensive survey given in the 1999 status report (RD48 3rd Status Report, CERN/LHCC 2000-009, December 1999), a recent conference report (Lindstrom et al. (RD48), and some latest experimental results. Additional data have been reported in the last ROSE workshop (5th ROSE workshop, CERN, CERN/LEB 2000-005). A compilation of all RD48 internal reports and a full publication list can be found on the RD48 homepage (http://cern.ch/RD48/). The success of the oxygen enrichment of FZ-silicon as a highly powerful defect engineering technique and its optimisation with various commercial manufacturers are reported. The focus is on the changes of the effective doping concentration (depletion voltage). The RD48 model for the dependence of radiation effects on fluence, temperature and operational time is verified; projections to operational scenarios for main LHC experiments demonstrate vital benefits. Progress in the microscopic understanding of damage effects as well as the application of defect kinetics models and device modelling for the prediction of the macroscopic behaviour has also been achieved but will not be covered in detail.

Segment based image matching method and system

Abstract: An image matching method and system for use with multiple images of a scene captured from different angles. Image matching is performed by identifying a plurality of segments within at least two images, determining an initial disparity values for pixels in the images and then determining initial disparity planes for the segments by fitting a plane to initial disparity values for the segments. A refined disparity plane set is created by iteratively refitting the disparity planes by using various fitting cost functions and weighted linear systems. A labeling of each segment to a disparity plane is made by minimizing a global energy function that includes energy terms for segment to disparity plane matching as well as penalizing disparity plane discontinuities between adjacent image segments.

A 1.2-V Highly Linear Balanced Noise-Cancelling LNA in 0.13- $\mu{\hbox{m}}$ CMOS

Abstract: In this paper, a current-to-voltage combiner is proposed to realize a highly linear, balanced noise-cancelling low-noise amplifier (LNA) capable of low-voltage operation The current-to-voltage combiner, implemented in the load of the amplifier, converts the output currents of the parallel common-gate (CG) and common-source (CS) stages of the LNA to voltages, equalizes the amplitudes of the voltages, and combines the voltages to a single output voltage Since only a CS stage and passive components are employed to cancel the noise and distortion due to the CG input impedance matching circuit, high linearity is achieved in spite of the low supply voltage of 12 V The LNA achieves a noise figure (NF) of 30 dB at 21 GHz with an input-referred third-order intercept point (IIP3) of +105 dBm while consuming 105 mA from a 12-V supply The amplifier is fabricated in 013-mum CMOS process

A low-noise single-photon detector implemented in a 130 nm CMOS imaging process

Abstract: We report on a new single-photon avalanche diode (SPAD) fabricated in a 130 nm CMOS imaging process. A novel circular structure combining shallow trench isolation (STI) and a passivation implant creates an effective guard ring against premature edge breakdown. Thanks to this guard ring, unprecedented levels of miniaturization may be achieved at no cost of added noise, decreased sensitivity, or timing resolution. The detector, integrated along with quenching and readout electronics, was fully characterized. A second batch of detectors with decreased n-well doping was fabricated, thus reducing the dark count rate (DCR) by several orders of magnitude. To the best of our knowledge, the DCR per unit area achieved in these devices is the lowest ever reported in deep sub-micron CMOS SPADs. Optical measurements show the effectiveness of the guard ring and the high degree of electric field planarity across the sensitive region of the detector. With a photon detection probability (PDP) of up to 36% and a timing jitter of 125 ps at full-width-half-maximum, this SPAD is well-suited for applications such as 3D imaging, fluorescence lifetime imaging, and biophotonics.