STMicroelectronics

About: STMicroelectronics is a company organization based out in Geneva, Switzerland. It is known for research contribution in the topics: Transistor & Signal. The organization has 17172 authors who have published 29543 publications receiving 300766 citations. The organization is also known as: SGS-Thomson & STM.

Silicon planar technology for single-photon optical detectors

Abstract: Design and fabrication of single photon avalanche detector (SPAD) in planar technology is reported. Device design and critical issues in the technology are discussed. Experimental test procedures are described for dark-counting rate, afterpulsing probability, photon timing resolution, and quantum detection efficiency. Low-noise detectors are obtained, with dark counting rates down to 10 c/s for devices with 10 /spl mu/m diameter, down to 1 kc/s for 50 /spl mu/m diameter. The technology is suitable for monolithic integration of SPAD detectors and associated circuits.

A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications

Abstract: Band-gap engineering using SiGe channels to reduce the threshold voltage (V TH ) in p-channel MOSFETs has enabled a simplified gate-first high-к/metal gate (HKMG) CMOS integration flow. Integrating Silicon-Germanium channels (cSiGe) on silicon wafers for SOC applications has unique challenges like the oxidation rate differential with silicon, defectivity and interface state density in the unoptimized state, and concerns with T inv scalability. In overcoming these challenges, we show that we can leverage the superior mobility, low threshold voltage and NBTI of cSiGe channels in high-performance (HP) and low power (LP) HKMG CMOS logic MOSFETs with multiple oxides utilizing dual channels for nFET and pFET.

Linearly regulated voltage multiplier

Abstract: A regulating circuit for the output voltage of a voltage booster, of the type which comprises a first charge transfer capacitor adapted to draw electric charges from the supply terminal and transfer them to the output terminal, through electronic switches controlled by non-overlapped complementary phase signals, and a second charge storage capacitor connected between the output terminal and ground, further comprises an error amplifier which generates, during one of the operational phases, a DC voltage corresponding to the difference between a reference voltage and a divided voltage of the output voltage of the voltage booster; this DC voltage is applied directly to one end of the transfer capacitor.

Manipulation of data

Abstract: A computer and a method of operating a computer is disclosed which allow manipulation of data values in the context of the execution of so-called "packed instructions". Packed instructions are carried out on packed operands. A packed operand comprises a data string consisting of a plurality of sub-strings, each defining a particular data value or object. The invention relates to a restructuring instruction which allows objects to be reorganised within a data string thereby minimising loading and storing operations to memory.

Passivation mechanisms in cryogenic SF6/O2 etching process

Abstract: Passivation mechanisms of Si trenches involved in SF6/O2 cryogenic plasma etching were investigated in order to better control the process and avoid defects. Trench sidewalls and profiles were ex situ characterized geometrically by SEM and chemically by spatially resolved XPS experiments. These measurements reveal that the passivating layer is removed during the increase of the wafer chuck temperature leading to a very clean surface of the sidewalls after processing. Nearly no SiO2 formation on the sidewalls was observed after the very low temperature etching (−100 °C). A two-step process was defined to rebuild the passivating layer after its destruction and continue the trench etching. The necessary conditions for properly rebuilding the passivating layer give precious information about its chemical composition. These experiments clearly show that sulfur is not a necessary element to form an efficient passivating layer.