Institution
STMicroelectronics
Company•Geneva, Switzerland•
About: STMicroelectronics is a company organization based out in Geneva, Switzerland. It is known for research contribution in the topics: Transistor & Signal. The organization has 17172 authors who have published 29543 publications receiving 300766 citations. The organization is also known as: SGS-Thomson & STM.
Topics: Transistor, Signal, Integrated circuit, CMOS, Layer (electronics)
Papers published on a yearly basis
Papers
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03 Feb 1995TL;DR: In this paper, a programmable logic device can be used either as a look-up table logic device or as a logic function generator, which enables combinations to be provided such as the combination of a look up table with a fixed gate field programmable gate array.
Abstract: A programmable logic device is disclosed which can be used either as a look-up table logic device or as a logic function generator This enables combinations to be provided such as the combination of a look-up table with a fixed gate field programmable gate array
97 citations
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TL;DR: A comprehensive tool, written in MATLAB, for modeling noise in CMOS image sensors and showing the effect in images, using accepted theoretical/empirical noise models with parameters from measured process-data distributions is reported.
Abstract: Accurate modeling of image noise is important in understanding the relative contributions of multiple-noise mechanisms in the sensing, readout, and reconstruction phases of image formation. There is a lack of high-level image-sensor system modeling tools that enable engineers to see realistic visual effects of noise and change-specific design or process parameters to quickly see the resulting effects on image quality. This paper reports a comprehensive tool, written in MATLAB, for modeling noise in CMOS image sensors and showing the effect in images. The tool uses accepted theoretical/empirical noise models with parameters from measured process-data distributions. Output images from the tool are used to demonstrate the effectiveness of this approach in determining the effects of various noise sources on image quality
97 citations
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TL;DR: In this paper, a variable capacitance of 3.1 pF nominal value has been realized in a 0.35-/spl mu/m standard CMOS process, and a factor two capacitance change has been achieved for a 2-V variation of the controlling voltage.
Abstract: CMOS technology scaling opens up the possibility of designing variable capacitors based on a metal oxide semiconductor structure with improved tuning range and quality factor. This is due to an increase in the oxide capacitance and a reduction in the parasitic resistance. A prototype metal-oxide-semiconductor (MOS) variable capacitor of 3.1 pF nominal value has been realized in a 0.35-/spl mu/m standard CMOS process. A factor two capacitance change has been achieved for a 2-V variation of the controlling voltage. The varactor Q ranges from 17 to 35, at 1.8 GHz.
97 citations
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20 Apr 2001TL;DR: In this paper, a method and apparatus of music distribution from a media player is provided with a “send to friend” icon, when the icon is selected, a clipping of the currently playing music selection is taken from a predetermined location in the music selection and compressed using a fidelity reducing compression technique to produce a sample of the current selection suitable for distribution.
Abstract: A method and apparatus of music distribution from a media player. A media player is provided with a “send to friend” icon. In one embodiment, when the icon is selected, a clipping of the currently playing music selection is taken from a predetermined location in the music selection and compressed using a fidelity reducing compression technique to produce a sample of the current selection suitable for distribution. The compressed clipping is sent to a selected recipient or recipients by email in the background while the music selection continues to play. The recipient(s) can be either a default recipient(s) or a recipient(s) selected from a list as in an address book application.
97 citations
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TL;DR: In this paper, an overview of the evolution of capacitor technology is presented from the early days of planar PIS capacitors to the MIM (metal/insulator/metal) capacitors used for todays 65 nm technology node.
Abstract: The architecture, materials choice and process technology for stacked-capacitors in embedded-DRAM applications are a crucial concern for each new technology node. An overview of the evolution of capacitor technology is presented from the early days of planar PIS (poly/insulator/silicon) capacitors to the MIM (metal/insulator/metal) capacitors used for todays 65 nm technology node. In comparing Ta2O5, HfO2 and Al2O3 as high-k dielectric for use in 65 nm eDRAM technology, Al2O3 is found to give a good compromise between capacitor performance and manufacturability. The use of atomic layer deposition (ALD) is identified to be an enabling technology for both high-k dielectrics and capacitor electrodes. � 2005 Elsevier Ltd. All rights reserved.
97 citations
Authors
Showing all 17185 results
Name | H-index | Papers | Citations |
---|---|---|---|
Bharat Bhushan | 116 | 1276 | 62506 |
Albert Polman | 97 | 445 | 42985 |
G. Pessina | 84 | 828 | 30807 |
Andrea Santangelo | 83 | 886 | 29019 |
Paolo Mattavelli | 74 | 482 | 19926 |
Daniele Ielmini | 68 | 367 | 16443 |
Jean-François Carpentier | 62 | 459 | 14271 |
Robert Henderson | 58 | 440 | 13189 |
Bruce B. Doris | 56 | 604 | 12366 |
Renato Longhi | 55 | 177 | 8644 |
Aldo Romani | 54 | 425 | 11513 |
Paul Muralt | 54 | 344 | 12694 |
Enrico Zanoni | 53 | 705 | 13926 |
Gaudenzio Meneghesso | 51 | 703 | 12567 |
Franco Zappa | 50 | 274 | 9211 |