STMicroelectronics

About: STMicroelectronics is a company organization based out in Geneva, Switzerland. It is known for research contribution in the topics: Transistor & Signal. The organization has 17172 authors who have published 29543 publications receiving 300766 citations. The organization is also known as: SGS-Thomson & STM.

Dual accelerometer detector for clamshell devices

Abstract: A clamshell device having a dual accelerometer detector includes a first keyboard portion including a first accelerometer, a second display portion including a second accelerometer, a hinge for coupling the first portion to the second portion, and circuitry coupled to the first and second accelerometers for providing an output signal in response to the position of the first and second portions of the clamshell device. The output signal is provided to indicate a shutdown or standby mode, tablet operation mode, a partially shut or power savings mode, a normal operating mode, or an unsafe operating mode.

Method of inter-system coexistence and spectrum sharing for dynamic spectrum access networks-on-demand spectrum contention

Abstract: This invention relates to cognitive radio based wireless communications of dynamic spectrum access networks, and more particularly to a method of addressing inter-systems (cells) coexistence and spectrum sharing. The described method of spectrum sharing called On-Demand Spectrum Contention, integrates Dynamic Frequency Selection and Transmission Power Control with iterative on-demand spectrum contentions and provides fairness, adaptability, and efficiency of spectrum access for dynamic spectrum access systems using active inter-system coordination.

14nm FDSOI technology for high speed and energy efficient applications

Abstract: This paper presents a 14nm technology designed for high speed and energy efficient applications using strain-engineered FDSOI transistors. Compared to the 28nm FDSOI technology, this 14nm FDSOI technology provides 0.55× area scaling and delivers a 30% speed boost at the same power, or a 55% power reduction at the same speed, due to an increase in drive current and low gate-to-drain capacitance. Using forward back bias (FBB) we experimentally demonstrate that the power efficiency of this technology provides an additional 40% dynamic power reduction for ring oscillators working at the same speed. Finally, a full single-port SRAM offering is reported, including an 0.081°m 2 high-density bitcell and two 0.090°m 2 bitcell flavors used to address high performance and low leakage-low Vmin requirements.

Method for multilevel programming of phase change memory cells using a percolation algorithm

Abstract: A method and apparatus for programming a phase change memory cell (2) is disclosed. A phase change memory cell (2) includes a memory element (10) of a phase change material having a first state ("11"), in which the phase change material is crystalline and has a minimum resistance level, a second state ("00") in which the phase change material is amorphous and has a maximum resistance level, and a plurality of intermediate states with resistance levels there between. The method includes using programming pulses to program the phase change memory cell (2) in either the set, reset, or one of the intermediate states. To program in the intermediate states, a programming pulse creates a crystalline percolation path having an average diameter (D) through amorphous phase change material and a second programming pulse modifies the diameter (D) of the crystalline percolation path to program the phase change memory cell to the proper current level.