Institution
STMicroelectronics
Company•Geneva, Switzerland•
About: STMicroelectronics is a company organization based out in Geneva, Switzerland. It is known for research contribution in the topics: Transistor & Signal. The organization has 17172 authors who have published 29543 publications receiving 300766 citations. The organization is also known as: SGS-Thomson & STM.
Topics: Transistor, Signal, Integrated circuit, CMOS, Layer (electronics)
Papers published on a yearly basis
Papers
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01 Dec 2008TL;DR: In this article, back-illuminated photodiodes are realized on a first silicon layer, while readout transistors are located on a second silicon layer for low noise pixel performances.
Abstract: This paper presents an innovative 3D architecture capable of overcoming pixel miniaturization drawbacks. Back-illuminated photodiodes are realized on a first silicon layer, while readout transistors are located on a second silicon layer. Implications of a sequential integration are evaluated in the perspective of low noise pixel performances with a comprehensive study on: 1/ setting the thermal budget limit to 700degC to preserve transfer gate performances, 2/ transferring high quality SOI by direct bonding 3/ processing HfO2/TiN fully depleted transistors, exhibiting noise levels close to standard 2.2 mum pixels, with improvement solutions.
82 citations
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20 Oct 1998TL;DR: In this paper, a fingertip operated solid state capacitance switch detects a capacity change that is induced by the physical contact of an ungrounded fingertip to an external dielectric surface of the switch.
Abstract: A fingertip-operated solid state capacitance switch detects a capacity change that is induced by the physical contact of an ungrounded fingertip to an external dielectric surface of the solid state switch. The input and output of a solid state signal-inverting amplifier are respectively connected to two relatively large and ungrounded capacitor plates that are associated with, but electrically isolated from, the switch's external dielectric surface. An ungrounded fingertip forms a third capacitor plate on the switch's external surface. The solid state amplifier detects the presence of a fingertip on the switch's external surface by way of a change in capacitance within a compound, three plate, capacitor that includes the two ungrounded capacitor plates and the ungrounded fingertip that is resident on the switch's external surface. An automatic gain control circuit is provided to adjust the value of an amplifier reference voltage when the solid state switch is not operating, thereby allowing the solid state switch to adapt to changeable ambient conditions. A momentary switch and a toggle flip-flop latched switch are provided. A linear switch array having a movable control knob and a linear LED indicator array is provided. The momentary solid state switch is constructed to operate as a temporal code detector that detects a coded sequence of switch-taps and a coded time interval between adjacent switch-taps.
82 citations
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01 Dec 2016TL;DR: In this article, vertically stacked horizontal Si nano-wire (NW) /-MOSFETs fabricated with a replacement metal gate (RMG) process are integrated with inner spacers and SiGe source-drain (S/D) stressors.
Abstract: We report on vertically stacked horizontal Si NanoWires (NW) /»-MOSFETs fabricated with a replacement metal gate (RMG) process. For the first time, stacked-NWs transistors are integrated with inner spacers and SiGe source-drain (S/D) stressors. Recessed and epitaxially re-grown SiGe(B) S/D junctions are shown to be efficient to inject strain into Si/-channels. The Precession Electron Diffraction (PED) technique, with a nm-scale precision, is used to quantify the deformation and provide useful information about strain fields at different stages of the fabrication process. Finally, a significant compressive strain and excellent short-channel characteristics are demonstrated in stacked-NWs /-FETs.
82 citations
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28 Jun 2002TL;DR: In this article, the memory structures may differ in at least one parameter, such as memory size, available configuration depths, and available configuration widths, and a more efficient memory utilization is provided.
Abstract: A field programmable logic device includes at least two independently configurable embedded memory structures. The memory structures may differ in at least one parameter, such as memory size, available configuration depths, and available configuration widths. As such, a more efficient memory utilization is provided.
81 citations
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04 Aug 2008TL;DR: In this paper, a method for driving electronic devices connected to a vehicle trailer tow connector is described, in which a trailer electronic device control signal is receiving from a vehicle data communication network.
Abstract: In a method for driving electronic devices connected to a vehicle trailer tow connector a trailer electronic device control signal is receiving from a vehicle data communication network. In response to the received control signal, a solid state power control device is switched to connect electrical power to a selected pin of the trailer tow connector. The trailer electronic device control signal may be received from a wiring harness connector connected to a vehicle data communication network. A vehicle trailer tow connector module includes a module housing. A vehicle wiring connector and a trailer wiring connector are coupled to the module housing. A power control circuit is connected to a selected pin in the trailer wiring connector. A controller circuit is coupled to the vehicle wiring connector for receiving communication data from a vehicle data bus, and coupled by control lines to the power control circuit.
81 citations
Authors
Showing all 17185 results
Name | H-index | Papers | Citations |
---|---|---|---|
Bharat Bhushan | 116 | 1276 | 62506 |
Albert Polman | 97 | 445 | 42985 |
G. Pessina | 84 | 828 | 30807 |
Andrea Santangelo | 83 | 886 | 29019 |
Paolo Mattavelli | 74 | 482 | 19926 |
Daniele Ielmini | 68 | 367 | 16443 |
Jean-François Carpentier | 62 | 459 | 14271 |
Robert Henderson | 58 | 440 | 13189 |
Bruce B. Doris | 56 | 604 | 12366 |
Renato Longhi | 55 | 177 | 8644 |
Aldo Romani | 54 | 425 | 11513 |
Paul Muralt | 54 | 344 | 12694 |
Enrico Zanoni | 53 | 705 | 13926 |
Gaudenzio Meneghesso | 51 | 703 | 12567 |
Franco Zappa | 50 | 274 | 9211 |