STMicroelectronics

About: STMicroelectronics is a company organization based out in Geneva, Switzerland. It is known for research contribution in the topics: Transistor & Signal. The organization has 17172 authors who have published 29543 publications receiving 300766 citations. The organization is also known as: SGS-Thomson & STM.

A new driving circuit for IGBT devices

Abstract: IGBT devices are increasingly used in power electronic equipment due to their high power handling capability. This paper deals with the problems that concern the turn-on, turn-off, and short-circuit of these devices. An optimal new driving circuit is proposed which gives excellent device output performances. Experimental oscillogram traces of transient condition tests are given, which demonstrate the advantages of using the new driving circuit. The suitability of the driving circuit for integration is analyzed. >

Radio frequency device with magnetic element, method for making such a magnetic element

Abstract: The invention concerns a radio frequency device comprising an electrically conductive element associated with at least one first continuous magnetic element including a substrate coated with a magnetic film having a granular structure with grains inclined relative to the normal to the substrate or a fibrous texture inclined relative to the normal to the substrate.

Multi-gate devices for the 32 nm technology node and beyond

Abstract: Due to the limited control of the short channel effects, the high junction leakage caused by band-to-band tunneling and the dramatically increased VT statistical fluctuations, the scaling of planar bulk MOSFETs becomes more and more problematic with every technology node. The ITRS roadmap predicts that from the 32 nm technology node on, planar bulk devices will not be able to meet the stringent leakage requirements anymore and that multi-gate devices will be required. In this paper, the suitability of FinFET-based multi-gate devices for the 32 nm technology and beyond will be discussed. Apart from the benefits, some technological challenges will be addressed.

Color filters including infrared cut-off integrated on CMOS image sensor.

Abstract: A color image was taken with a CMOS image sensor without any infrared cut-off filter, using red, green and blue metal/dielectric filters arranged in Bayer pattern with 1.75µm pixel pitch. The three colors were obtained by a thickness variation of only two layers in the 7-layer stack, with a technological process including four photolithography levels. The thickness of the filter stack was only half of the traditional color resists, potentially enabling a reduction of optical crosstalk for smaller pixels. Both color errors and signal to noise ratio derived from optimized spectral responses are expected to be similar to color resists associated with infrared filter.

An 18-Gb/s, Direct QPSK Modulation SiGe BiCMOS Transceiver for Last Mile Links in the 70–80 GHz Band

Abstract: This paper describes a single-chip, 70-80 GHz wireless transceiver utilizing a direct mm-wave QPSK modulator. The transceiver was fabricated in a 130 nm SiGe BiCMOS technology and can operate at data rates in excess of 18 Gb/s. The peak gain of the zero-IF receiver is 50 dB, the double sideband noise figure remains below 7 dB, while the 3-dB receive-chain bandwidth extends from DC to over 6 GHz. The differential transmitter achieves a maximum output power of +9 dBm. The total power consumption of the 1.9 mm × 1.1 mm transceiver is 1.2 W from 1.5, 2.5 and 3.3 V power supplies, including the 4 × 20-Gb/s PRBS generator.