Sun Yat-sen University

About: Sun Yat-sen University is a education organization based out in Guangzhou, Guangdong, China. It is known for research contribution in the topics: Population & Cancer. The organization has 115149 authors who have published 113763 publications receiving 2286465 citations. The organization is also known as: Zhongshan University & SYSU.

A New Benchmark Capacitance for Supercapacitor Anodes by Mixed-Valence Sulfur-Doped V6O13−x

Abstract: A new pseudocapacitor anode, sulfur-doped V6O(13-x), is reported. It achieves a benchmark capacitance of 1353 F/g (0.72 F/cm(2)) at a current density of 1.9 A/g (1 mA/cm(2)) in 5 M LiCl solution. The charges are stored chemically in the electrode via reversible redox reactions that involve multiple oxidation states of vanadium (V(3+), V(4+) and V(5+)).

Deep learning Radiomics of shear wave elastography significantly improved diagnostic performance for assessing liver fibrosis in chronic hepatitis B: a prospective multicentre study

Abstract: Objective We aimed to evaluate the performance of the newly developed deep learning Radiomics of elastography (DLRE) for assessing liver fibrosis stages. DLRE adopts the radiomic strategy for quantitative analysis of the heterogeneity in two-dimensional shear wave elastography (2D-SWE) images. Design A prospective multicentre study was conducted to assess its accuracy in patients with chronic hepatitis B, in comparison with 2D-SWE, aspartate transaminase-to-platelet ratio index and fibrosis index based on four factors, by using liver biopsy as the reference standard. Its accuracy and robustness were also investigated by applying different number of acquisitions and different training cohorts, respectively. Data of 654 potentially eligible patients were prospectively enrolled from 12 hospitals, and finally 398 patients with 1990 images were included. Analysis of receiver operating characteristic (ROC) curves was performed to calculate the optimal area under the ROC curve (AUC) for cirrhosis (F4), advanced fibrosis (≥F3) and significance fibrosis (≥F2). Results AUCs of DLRE were 0.97 for F4 (95% CI 0.94 to 0.99), 0.98 for ≥F3 (95% CI 0.96 to 1.00) and 0.85 (95% CI 0.81 to 0.89) for ≥F2, which were significantly better than other methods except 2D-SWE in ≥F2. Its diagnostic accuracy improved as more images (especially ≥3 images) were acquired from each individual. No significant variation of the performance was found if different training cohorts were applied. Conclusion DLRE shows the best overall performance in predicting liver fibrosis stages compared with 2D-SWE and biomarkers. It is valuable and practical for the non-invasive accurate diagnosis of liver fibrosis stages in HBV-infected patients. Trial registration number NCT02313649; Post-results.

Gallium oxide solar-blind ultraviolet photodetectors: a review

Abstract: In recent years, solar-blind ultraviolet (UV) photodetectors have attracted significant attention from researchers in the field of semiconductor devices due to their indispensable properties in the fields of high-temperature event monitoring, anti-terrorism, security and ad hoc network communication. As an important member of the third-generation semiconductors, β-Ga2O3 is considered to be one of the most promising candidates for solar-blind UV detectors due to its ultra-wide band gap (∼4.9 eV), economic efficiency, high radiation resistance and excellent chemical and thermal stability. Herein, we provide a comprehensive review on Ga2O3-based solar-blind UV photodetectors, with a detailed introduction of the developmental process of material growth methods and device manufacturing in the past decade. We classify the currently reported Ga2O3-based solar-blind UV photodetectors (mainly including photoconductive detectors, heterogeneous PN junction detectors and Schottky junction detectors) and summarize their respective superiorities and potentials for improvement. Finally, considering the actual application requirements, we put forward some meaningful suggestions, including energy band engineering and homogeneous epitaxy, for the future development of Ga2O3 material growth and device manufacturing.