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Institution

Sungkyunkwan University

EducationSeoul, South Korea
About: Sungkyunkwan University is a education organization based out in Seoul, South Korea. It is known for research contribution in the topics: Thin film & Graphene. The organization has 28229 authors who have published 56428 publications receiving 1352733 citations. The organization is also known as: 성균관대학교.


Papers
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Journal ArticleDOI
TL;DR: In this paper, the surface growth of a low-dimensional perovskite layer on top of a 3D perovsite film was controlled by a structured perov-skite interface.
Abstract: Perovskite solar cells (PSCs) are promising alternatives toward clean energy because of their high-power conversion efficiency (PCE) and low materials and processing cost However, their poor stability under operation still limits their practical applications Here we design an innovative approach to control the surface growth of a low dimensional perovskite layer on top of a bulk three-dimensional (3D) perovskite film This results in a structured perovskite interface where a distinct layered low dimensional perovskite is engineered on top of the 3D film Structural and optical properties of the stack are investigated and solar cells are realized When embodying the low dimensional perovskite layer, the photovoltaic cells exhibit an enhanced PCE of 201% on average, when compared to pristine 3D perovskite In addition, superior stability is observed: the devices retain 85% of the initial PCE stressed under one sun illumination for 800 hours at 50 °C in an ambient environment

276 citations

Journal ArticleDOI
TL;DR: Understanding ROP risk factors is essential to develop predictive models, to gain insights into pathophysiology of retinal vascular diseases and diseases of prematurity, and to determine future directions in management of and research in ROP.

276 citations

Journal ArticleDOI
TL;DR: In this article, results of searches for heavy stable charged particles produced in pp collisions at 7 and 8 TeV are presented corresponding to an integrated luminosity of 5.0 and 18.8 inverse femtobarns, respectively.
Abstract: Results of searches for heavy stable charged particles produced in pp collisions at sqrt(s) = 7 and 8 TeV are presented corresponding to an integrated luminosity of 5.0 inverse femtobarns and 18.8 inverse femtobarns, respectively. Data collected with the CMS detector are used to study the momentum, energy deposition, and time-of-flight of signal candidates. Leptons with an electric charge between e/3 and 8e, as well as bound states that can undergo charge exchange with the detector material, are studied. Analysis results are presented for various combinations of signatures in the inner tracker only, inner tracker and muon detector, and muon detector only. Detector signatures utilized are long time-of-flight to the outer muon system and anomalously high (or low) energy deposition in the inner tracker. The data are consistent with the expected background, and upper limits are set on the production cross section of long-lived gluinos, scalar top quarks, and scalar tau leptons, as well as pair produced long-lived leptons. Corresponding lower mass limits, ranging up to 1322 GeV for gluinos, are the most stringent to date.

276 citations

Journal ArticleDOI
TL;DR: The structures of metallic transition metal dichalcogenides and their synthetic approaches for not only high-quality wafer-scale samples using conventional methods but also local small areas by a modification of the materials using Li intercalation, electron beam irradiation, light illumination, pressures, and strains are presented.
Abstract: Transition metal dichalcogenides are layered materials which are composed of transition metals and chalcogens of the group VIA in a 1:2 ratio. These layered materials have been extensively investigated over synthesis and optical and electrical properties for several decades. It can be insulators, semiconductors, or metals revealing all types of condensed matter properties from a magnetic lattice distorted to superconducting characteristics. Some of these also feature the topological manner. Instead of covering the semiconducting properties of transition metal dichalcogenides, which have been extensively revisited and reviewed elsewhere, here we present the structures of metallic transition metal dichalcogenides and their synthetic approaches for not only high-quality wafer-scale samples using conventional methods (e.g., chemical vapor transport, chemical vapor deposition) but also local small areas by a modification of the materials using Li intercalation, electron beam irradiation, light illumination, pr...

275 citations


Authors

Showing all 28506 results

NameH-indexPapersCitations
Michael Grätzel2481423303599
Hyun-Chul Kim1764076183227
Yongsun Kim1562588145619
David J. Mooney15669594172
Jongmin Lee1502257134772
Byung-Sik Hong1461557105696
Inkyu Park1441767109433
Y. Choi141163198709
Kazunori Kataoka13890870412
E. J. Corey136137784110
Pasi A. Jänne13668589488
Suyong Choi135149597053
Intae Yu134137289870
Tae Jeong Kim132142093959
Anders Hagfeldt12960079912
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
2023103
2022588
20214,342
20204,248
20194,124
20183,826