Sungkyunkwan University

About: Sungkyunkwan University is a education organization based out in Seoul, South Korea. It is known for research contribution in the topics: Thin film & Graphene. The organization has 28229 authors who have published 56428 publications receiving 1352733 citations. The organization is also known as: 성균관대학교.

Phase Ib/II Study of Capmatinib (INC280) Plus Gefitinib After Failure of Epidermal Growth Factor Receptor (EGFR) Inhibitor Therapy in Patients With EGFR-Mutated, MET Factor–Dysregulated Non–Small-Cell Lung Cancer

Abstract: PurposeMET dysregulation occurs in up to 26% of non–small-cell lung cancers (NSCLCs) after epidermal growth factor receptor (EGFR)–tyrosine kinase inhibitor (TKI) treatment Capmatinib (INC280) is

Substrate effect on thickness-dependent friction on graphene

Abstract: Using friction force microscopy, we have investigated the frictional behavior of graphene deposited on various substrates as well as over micro-fabricated wells. Both graphene on SiO 2 / Si substrates and graphene freely suspended over the wells showed a trend of increasing friction with decreasing number of atomic layers of graphene. However, this trend with thickness was absent for graphene deposited on mica, where the graphene is strongly bonded to the substrate. Measurements together with a mechanics model suggest that mechanical confinement to the substrate plays an important role in the frictional behavior of these atomically thin graphite sheets. Loosely bound or suspended graphene sheets can pucker in the out-of-plane direction due to tip-graphene adhesion. This increases contact area, and also allows further defonnation of the graphene when sliding, leading to higher friction. Since thinner samples have lower bending stiffness, the puckering effect and frictional resistance are greater. However, if the graphene is strongly bound to the substrate, the puckering effect will be suppressed and no thickness dependence should be observed. The results can provide potentially useful guidelines in the rational design and use of graphene for nano-mechanical applications, including nano-lubricants and components in micro- and nanodevices.

Analysis and experiments for high-efficiency class-F and inverse class-F power amplifiers

Abstract: This paper presents analytic and experimental comparisons for high-efficiency class-F and inverse class-F amplifiers. The analytic formula of the efficiencies, output powers, dc power dissipations, and fundamental load impedances of both amplifiers are derived from the ideal current and voltage waveforms. Based on the formula, the performances are compared with a reasonable condition: fundamental output power levels of class-F and inverse class-F amplifiers are conditioned to be identical. The results show that the inverse class-F amplifier has better efficiency than that of class-F amplifiers as the on-resistance of the transistor increases. For experimental comparison, we have designed and implemented the class-F and inverse class-F amplifiers at I-GHz band using a GaAs MESFET and analyzed the measured performances. Experimental results shows 10% higher power-added efficiency of the inverse class-F amplifier than that of the class-F amplifier, which verifies the waveform analysis.