Institution
Tata Institute of Fundamental Research
Education•Mumbai, Maharashtra, India•
About: Tata Institute of Fundamental Research is a education organization based out in Mumbai, Maharashtra, India. It is known for research contribution in the topics: Magnetization & Large Hadron Collider. The organization has 7786 authors who have published 21742 publications receiving 622368 citations. The organization is also known as: TIFR.
Topics: Magnetization, Large Hadron Collider, Galaxy, Higgs boson, Lepton
Papers published on a yearly basis
Papers
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TL;DR: Two triple resonance experiments, HNN and HN(C)N, are presented which correlate HN and 15N resonances sequentially along the polypeptide chain of a doubly (13C, 15N) labeled protein.
Abstract: Two triple resonance experiments, HNN and HN(C)N, are presented which correlate HN and 15N resonances sequentially along the polypeptide chain of a doubly (13C, 15N) labeled protein These incorporate several improvements over the previously published sequences for a similar purpose and have several novel features The spectral characteristics enable direct identification of certain triplets of residues, which provide many starting points for the sequential assignment procedure The experiments are sensitive and their utility has been demonstrated with a 22 kDa protein under unfolding conditions where most of the standard triple resonance experiments such as HNCA, CBCANH etc have limited success because of poor amide, Cα and Cβ chemical shift dispersions
187 citations
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TL;DR: This model, which is derived from investigations of the current distribution across single crystals of NbSe2, is based on a competition between the injection of a disordered vortex phase at the sample edges, and the dynamic annealing of this metastable disorder by the transport current.
Abstract: The magnetic flux line lattice in type II superconductors serves as a useful system in which to study condensed matter flow, as its dynamic properties are tunable. Recent studies have shown a number of puzzling phenomena associated with vortex motion, including: low-frequency noise and slow voltage oscillations; a history-dependent dynamic response, and memory of the direction, amplitude duration and frequency of the previously applied current; high vortex mobility for alternating current, but no apparent vortex motion for direct currents; and strong suppression of an a.c. response by small d.c. bias. Taken together, these phenomena are incompatible with current understanding of vortex dynamics. Here we report a generic mechanism that accounts for these observations. Our model, which is derived from investigations of the current distribution across single crystals of NbSe2, is based on a competition between the injection of a disordered vortex phase at the sample edges, and the dynamic annealing of this metastable disorder by the transport current. For an alternating current, only narrow regions near the edges are in the disordered phase, while for d.c. bias, most of the sample is in the disordered phase--preventing vortex motion because of more efficient pinning. The resulting spatial dependence of the disordered vortex system serves as an active memory of the previous history.
187 citations
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TL;DR: In this article, the gate leakage mechanisms in AlInN/GaN and AlGaN/GAN high electron mobility transistors (HEMTs) are compared using temperature-dependent gate currentvoltage (IG-VG) characteristics.
Abstract: The gate leakage mechanisms in AlInN/GaN and AlGaN/GaN high electron mobility transistors (HEMTs) are compared using temperature-dependent gate current-voltage (IG-VG) characteristics. The reverse bias gate current of AlInN/GaN HEMTs is decomposed into three distinct components, which are thermionic emission (TE), Poole-Frenkel (PF) emission, and Fowler-Nordheim (FN) tunneling. The electric field across the barrier in AlGaN/GaN HEMTs is not sufficient to support FN tunneling. Hence, only TE and PF emission is observed in AlGaN/GaN HEMTs. In both sets of devices, however, an additional trap-assisted tunneling component of current is observed at low reverse bias. A model to describe the experimental IG-VG characteristics is proposed and the procedure to extract the associated parameters is described. The model follows the experimental gate leakage current closely over a wide range of bias and temperature for both AlGaN/GaN and AlInN/GaN HEMTs.
186 citations
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TL;DR: Through extensive computer simulations for a wide range of system sizes, it is demonstrated that cyclically deformed model glasses exhibit a sharply defined yielding transition with characteristics that are independent of preparation history.
Abstract: Amorphous solids are ubiquitous among natural and man-made materials. Often used as structural materials for their attractive mechanical properties, their utility depends critically on their response to applied stresses. Processes underlying such mechanical response, and in particular the yielding behaviour of amorphous solids, are not satisfactorily understood. Although studied extensively, observed yielding behaviour can be gradual and depend significantly on conditions of study, making it difficult to convincingly validate existing theoretical descriptions of a sharp yielding transition. Here we employ oscillatory deformation as a reliable probe of the yielding transition. Through extensive computer simulations for a wide range of system sizes, we demonstrate that cyclically deformed model glasses exhibit a sharply defined yielding transition with characteristics that are independent of preparation history. In contrast to prevailing expectations, the statistics of avalanches reveals no signature of the impending transition, but exhibit dramatic, qualitative, changes in character across the transition. The onset of yielding can be difficult to define unambiguously for amorphous materials. Here the authors undertake computer simulations of model glasses of varying system sizes and show that, under oscillatory shear, they exhibit a sharp transition independent of preparation history.
186 citations
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TL;DR: In this paper, the authors revisited the H i size-mass relation of galaxies with a sample of more than 500 nearby galaxies covering over five orders of magnitude in H i mass and more than 10 B-band magnitudes.
Abstract: We revisit the H i size-mass relation of galaxies with a sample of more than 500 nearby galaxies covering over five orders of magnitude in H i mass and more than 10 B-band magnitudes. The relation is remarkably tight with a scatter sigma similar to 0.06 dex, or 14 per cent. The scatter does not change as a function of galaxy luminosity, H i richness or morphological type. The relation is linked to the fact that dwarf and spiral galaxies have a homogeneous radial profile of H i surface density in the outer regions when the radius is normalized by D-H i. The early-type disc galaxies typically have shallower H i radial profiles, indicating a different gas accretion history. We argue that the process of atomic-to-molecular gas conversion or star formation cannot explain the tightness of the D-H i-M-H i relation. This simple relation puts strong constraints on simulation models for galaxy formation.
186 citations
Authors
Showing all 7857 results
Name | H-index | Papers | Citations |
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Pulickel M. Ajayan | 176 | 1223 | 136241 |
Suvadeep Bose | 154 | 960 | 129071 |
Subir Sarkar | 149 | 1542 | 144614 |
Sw. Banerjee | 146 | 1906 | 124364 |
Dipanwita Dutta | 143 | 1651 | 103866 |
Ajit Kumar Mohanty | 141 | 1124 | 93062 |
Tariq Aziz | 138 | 1646 | 96586 |
Andrew Mehta | 137 | 1444 | 101810 |
Suchandra Dutta | 134 | 1265 | 87709 |
Kajari Mazumdar | 134 | 1295 | 94253 |
Bobby Samir Acharya | 133 | 1121 | 100545 |
Gobinda Majumder | 133 | 1523 | 87732 |
Eric Conte | 132 | 1206 | 84593 |
Prashant Shukla | 131 | 1341 | 85287 |
Alessandro Montanari | 131 | 1387 | 93071 |