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Institution

Technical University of Berlin

EducationBerlin, Germany
About: Technical University of Berlin is a education organization based out in Berlin, Germany. It is known for research contribution in the topics: Quantum dot & Laser. The organization has 27292 authors who have published 59342 publications receiving 1414623 citations. The organization is also known as: Technische Universität Berlin & TU Berlin.


Papers
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Journal ArticleDOI
TL;DR: This paper compares the expense of power semiconductors and passive components of a two-level, three-level neutral-point-clamped, four-level flying-capacitor, and five-level series-connected H-bridge voltage source converter on the basis of the state-of-the-art 6.7-kV insulated gate bipolar transistors for industrial medium-voltage drives.
Abstract: This paper compares the expense of power semiconductors and passive components of a (2.3 kV, 2.4 MVA) two-level, three-level neutral-point-clamped, three-level flying-capacitor, four-level flying-capacitor, and five-level series-connected H-bridge voltage source converter on the basis of the state-of-the-art 6.5-, 3.3-, 2.5-, and 1.7-kV insulated gate bipolar transistors for industrial medium-voltage drives. The power semiconductor losses, the loss distribution, the installed switch power, the design of flying capacitors, and the components of an sine filter for retrofit applications are considered.

285 citations

Journal ArticleDOI
TL;DR: In this article, the authors proposed a unified nanoscale theory by showing how externally prepared systems (e.g., atoms in an optical cavity or DNA bases in an enzyme reaction) that interact with a nanoscopic device can be a source of nonequilbrium free energy.
Abstract: Nanomachines are subject to random thermal and quantum fluctuations that are not captured by traditional thermodynamic theory. A new theoretical investigation offers a step toward a unified nanoscale theory by showing how externally prepared systems (e.g., atoms in an optical cavity or DNA bases in an enzyme reaction) that interact with a nanoscopic device can be a source of nonequilbrium free energy.

284 citations

Proceedings ArticleDOI
20 Jun 2004
TL;DR: Two generic rendez-vous schemes for dense wireless sensor networks, including the transmitter- and receiver-initiated cycled receiver schemes, are proposed, and precise guidelines and optimization strategies for synchronization in Wireless sensor networks are proposed.
Abstract: We propose two generic rendez-vous schemes for dense wireless sensor networks, including the transmitter- and receiver-initiated cycled receiver schemes. Our studies include the analyses and comparisons of their power efficiencies, especially under a fading channel as a realistic physical layer. We believe our modeling strategies as well as the results are applicable to any rendez-vous scheme of the cycled- receiver nature. The paper further proposes precise guidelines and optimization strategies for synchronization in wireless sensor networks.

284 citations

Journal ArticleDOI
TL;DR: In this paper, the second-order Raman-scattering experiments on hexagonal and cubic GaN covering the acoustic and the optical overtone spectral region were presented, and the observed structures were assigned to particular phonon branches and determined the points in the Brillouin zone from which the scattering originates.
Abstract: We present results of second-order Raman-scattering experiments on hexagonal and cubic GaN covering the acoustic and the optical overtone spectral region. Based on a comparison of the experimental scattering data with the calculated phonon-dispersion curves as well as the group-theoretically derived selection rules, we were able to assign the observed structures to particular phonon branches and determined the points in the Brillouin zone from which the scattering originates. Our measurements reveal the energies of acoustic zone-boundary phonons in hexagonal GaN.

284 citations

Journal ArticleDOI
TL;DR: In this article, a detailed reaction mechanism for the formation of crystalline elemental sulfur from aqueous sulfide by oxidation with transition-metal ions like VV, FeIII, CuII, etc.
Abstract: A detailed reaction mechanism is proposed for the formation of crystalline elemental sulfur from aqueous sulfide by oxidation with transition-metal ions like VV, FeIII, CuII, etc. The first step is the formation of HS• radicals by one-electron oxidation of HS- ions. These radicals exist at pH values near 7 mainly as S•-. Their spontaneous decay results in the formation of the disulfide ion S22-. The further oxidation of disulfide either by S•- radicals or by the transition-metal ions yields higher polysulfide ions from which the homocyclic sulfur molecules S6, S7, and S8 are formed. In water these hydrophobic molecules form clusters which grow to droplets of liquid sulfur (sulfur sol). Depending on the composition of the aqueous phase, crystallization of the liquid sulfur as either α- or β-S8 is rapid or delayed. Surfactants delay this solidification, while certain cations promote it. All these reactions are proposed to take place in desulfurization plants working by the Stretford, Sulfolin, Lo-Cat, SulFe...

284 citations


Authors

Showing all 27602 results

NameH-indexPapersCitations
Markus Antonietti1761068127235
Jian Li133286387131
Klaus-Robert Müller12976479391
Michael Wagner12435154251
Shi Xue Dou122202874031
Xinchen Wang12034965072
Michael S. Feld11955251968
Jian Liu117209073156
Ary A. Hoffmann11390755354
Stefan Grimme113680105087
David M. Karl11246148702
Lester Packer11275163116
Andreas Heinz108107845002
Horst Weller10545144273
G. Hughes10395746632
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
2023191
2022650
20213,307
20203,387
20193,105
20182,910