Toyota

About: Toyota is a company organization based out in Safenwil, Switzerland. It is known for research contribution in the topics: Internal combustion engine & Exhaust gas. The organization has 40032 authors who have published 55003 publications receiving 735317 citations. The organization is also known as: Toyota Motor Corporation & Toyota Jidosha KK.

Transcriptome analysis of O3-exposed Arabidopsis reveals that multiple signal pathways act mutually antagonistically to induce gene expression.

Abstract: To analyze cellular responses to ozone (O3), we performed a large-scale analysis of the Arabidopsis transcriptome after plants were exposed to O3 for 12 h. By using cDNA macroarray technology, we identified 205 non-redundant expressed sequence tags (ESTs) that were regulated by O3. Of these, 157 were induced and 48 were suppressed by O3. A substantial proportion of these ESTs had predicted functions in cell rescue/defense processes. Using these isolated ESTs, we also undertook a comprehensive investigation of how three hormones, ethylene (ET), jasmonic acid (JA), and salicylic acid (SA), interact to regulate O3-induced genes in various genetic backgrounds of Arabidopsis, such as the ET-insensitive ein2-1, JA-resistant jar1-1, and SA-insensitive npr1-1. The expression of half of the 157 induced genes, especially cell rescue/defense genes, was controlled by ET and JA signaling, indicating that O3-induced defense gene expression at this stage was mainly regulated by ET and JA. Clustering analysis of the 157 O3-induced gene expressions revealed that multiple signal pathways act mutually antagonistically to induce the expression of these genes, and many cell rescue/defense genes induced by ET and JA signal pathways were suppressed by SA signaling, suggesting that the SA pathway acts as a strong antagonist to gene expression induced by ET and JA signaling.

Characteristics of the Li2O–Li2S–P2S5 glasses synthesized by the two-step mechanical milling

Abstract: Sulfide solid electrolytes have high ion conductivities of 10 − 4 to 10 − 2 S cm − 1 at room temperature. However, sulfide electrolytes, which are hydrolyzed in air, generate H 2 S gas. In this study, an addition of Li 2 O to the 70Li 2 S·30P 2 S 5 (mol%) glass and synthesis procedures of the sulfide glasses were examined to suppress H 2 S gas generation. The addition of Li 2 O decreased H 2 S gas generation from the glass electrolytes. Moreover, the two-step synthesis, in which glasses were prepared by the reaction of Li 2 O and the 70Li 2 S·30P 2 S 5 glass prepared in advance, was extremely effective in suppressing H 2 S gas generation from the sulfide glass electrolytes. The Li 2 O–Li 2 S–P 2 S 5 glass electrolytes prepared by the two-step synthesis showed relatively high conductivity of more than 10 − 4 S cm − 1 at room temperature.

Properties of the gold oxides Au 2 O 3 and Au 2 O : First-principles investigation

Abstract: Density-functional theory (DFT) calculations have been carried out using the generalized gradient approximation (GGA) to investigate the atomic and electronic structure and stability of the gold oxides ${\mathrm{Au}}_{2}{\mathrm{O}}_{3}$ and ${\mathrm{Au}}_{2}\mathrm{O}$. We find that ${\mathrm{Au}}_{2}{\mathrm{O}}_{3}$ is a semiconductor and is more stable than ${\mathrm{Au}}_{2}\mathrm{O}$, which is an endothermic system, and only metastable. The higher stability of ${\mathrm{Au}}_{2}{\mathrm{O}}_{3}$ is attributed to a greater hybridization of $\mathrm{Au}\phantom{\rule{0.2em}{0ex}}5d$ and $\mathrm{O}\phantom{\rule{0.2em}{0ex}}2p$ states throughout the valence-band region as compared to ${\mathrm{Au}}_{2}\mathrm{O}$. The highest energy, oxygen related normal vibrational mode is slightly higher in ${\mathrm{Au}}_{2}{\mathrm{O}}_{3}$ as compared to ${\mathrm{Au}}_{2}\mathrm{O}$. ${\mathrm{Au}}_{2}\mathrm{O}$ is predicted by DFT-GGA to be metallic; calculations performed, however, using the screened-exchange local-density approximation find that it has a band gap of $0.83\phantom{\rule{0.3em}{0ex}}\mathrm{eV}$; thus, it is a direct narrow-band-gap semiconductor.