Institution
Toyota
Company•Safenwil, Switzerland•
About: Toyota is a company organization based out in Safenwil, Switzerland. It is known for research contribution in the topics: Internal combustion engine & Battery (electricity). The organization has 40032 authors who have published 55003 publications receiving 735317 citations. The organization is also known as: Toyota Motor Corporation & Toyota Jidosha KK.
Topics: Internal combustion engine, Battery (electricity), Exhaust gas, Layer (electronics), Electrode
Papers published on a yearly basis
Papers
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TL;DR: In this article, the icosahedral quasicrystal, finely distributed nano-sized precipitates of a ternary phase τ 1 and thin β 1 ′ phase rods several hundreds of nanometers long, were extruded at 523 K.
215 citations
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14 Jun 2016TL;DR: An overview of mmWave vehicular communication with an emphasis on results on channel measurements, the physical PHY layer, and the medium access control MAC layer is provided, with special attention paid to identifying important topics of future research.
Abstract: Future vehicles will require massive sensing capability. Leveraging only onboard sensors, though, is challenging in crowded environments where the sensing field-of-view is obstructed. One potential solution is to share sensor data among the vehicles and infrastructure. This has the benefits of providing vehicles with an enhanced field-of-view and also additional redundancy to provide more reliability in the sensor data. A main challenge in sharing sensor data is providing the high data rates required to exchange raw sensor data. The large spectral channels at millimeter wave mmWave frequencies provide a means of achieving much higher data rates. This monograph provides an overview of mmWave vehicular communication with an emphasis on results on channel measurements, the physical PHY layer, and the medium access control MAC layer. The main objective is to summarize key findings in each area, with special attention paid to identifying important topics of future research. In addition to surveying existing work, some new simulation results are also presented to give insights on the effect of directionality and blockage, which are the two distinguishing features of mmWave vehicular channels. A main conclusion of this monograph is that given the renewed interest in high rate vehicle connectivity, many challenges remain in the design of a mmWave vehicular network.
215 citations
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11 Jun 2012TL;DR: This paper develops a simple traffic information dissemination application based on the data naming design from previous work and evaluates its performance through simulations, showing that data names can greatly facilitate the forwarding process for Interest and data packets.
Abstract: This paper applies the Named Data Networking (NDN) concept to vehicle-to-vehicle (V2V) communications. Specifically, we develop a simple traffic information dissemination application based on the data naming design from our previous work and evaluate its performance through simulations. Our simulation results show that data names can greatly facilitate the forwarding process for Interest and data packets. With adequate vehicle density, data can propagate over long distances robustly at tens of kilometers per second, and a requester can retrieve the desired traffic information 10km away in a matter of seconds.
215 citations
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TL;DR: In this article, a novel method for fabricating trench structures on GaN was developed and a smooth non-polar (1100) plane was obtained by wet etching using tetramethylammonium hydroxide (TMAH) as the etchant.
Abstract: A novel method for fabricating trench structures on GaN was developed. A smooth non-polar (1100) plane was obtained by wet etching using tetramethylammonium hydroxide (TMAH) as the etchant. A U-shape trench with the (1100) plane side walls was formed with dry etching and the TMAH wet etching. A U-shape trench gate metal oxide semiconductor field-effect transistor (MOSFET) was also fabricated using the novel etching technology. This device has the excellent normally-off operation of drain current–gate voltage characteristics with the threshold voltage of 10 V. The drain breakdown voltage of 180 V was obtained. The results indicate that the trench gate structure can be applied to GaN-based transistors.
214 citations
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TL;DR: In this article, sulfonic acid functionalities (SO 3 H) were generated in situ by oxidation of the propylthiol using H 2 O 2 as oxidant during the synthesis process.
214 citations
Authors
Showing all 40045 results
Name | H-index | Papers | Citations |
---|---|---|---|
Derek R. Lovley | 168 | 582 | 95315 |
Edward H. Sargent | 140 | 844 | 80586 |
Shanhui Fan | 139 | 1292 | 82487 |
Susumu Kitagawa | 125 | 809 | 69594 |
John B. Buse | 117 | 521 | 101807 |
Meilin Liu | 117 | 827 | 52603 |
Zhongfan Liu | 115 | 743 | 49364 |
Wolfram Burgard | 111 | 728 | 64856 |
Douglas R. MacFarlane | 110 | 864 | 54236 |
John J. Leonard | 109 | 676 | 46651 |
Ryoji Noyori | 105 | 627 | 47578 |
Stephen J. Pearton | 104 | 1913 | 58669 |
Lajos Hanzo | 101 | 2040 | 54380 |
Masashi Kawasaki | 98 | 856 | 47863 |
Andrzej Cichocki | 97 | 952 | 41471 |