Institution
University of Arkansas
Education•Fayetteville, Arkansas, United States•
About: University of Arkansas is a education organization based out in Fayetteville, Arkansas, United States. It is known for research contribution in the topics: Population & Poison control. The organization has 17225 authors who have published 33329 publications receiving 941102 citations. The organization is also known as: Arkansas & UA.
Topics: Population, Poison control, Context (language use), Quantum dot, Broiler
Papers published on a yearly basis
Papers
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TL;DR: Extensions of mathematical programming models for making selective maintenance decisions for production equipment and military vehicles, which perform sequences of missions and are repaired only between missions are proposed.
168 citations
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TL;DR: The empirical evidence is summarized with emphasis on illuminating potential mediators, moderators, and mechanisms of the disgust-anxiety disorder association that may inform the development of an integrative conceptual model.
Abstract: Recent evidence indicates that the propensity towards experiencing disgust may contribute to the development and maintenance of some anxiety disorders. This article summarizes the empirical evidence with emphasis on illuminating potential mediators, moderators, and mechanisms of the disgust-anxiety disorder association that may inform the development of an integrative conceptual model. Early research using neuroimaging methods suggest that disgust processing is associated with activation of the insula. This research has the potential to facilitate progress in developing an empirically informed psychobiological theory on the causal role of disgust in the anxiety disorders.
168 citations
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TL;DR: Perspective: The Legacy Hypothesis Philip M. Haygarth,*,† Helen P. Jarvie,‡ Steve M. Powers, Andrew N. Sharpley, James J. Peterson, Neng-Iong Chan, Nicholas J. Elser, Jianbo Shen, Heidi M.Elser, and Xuejun Liu.
Abstract: Perspective: The Legacy Hypothesis Philip M. Haygarth,*,† Helen P. Jarvie,‡ Steve M. Powers, Andrew N. Sharpley, James J. Elser, Jianbo Shen, Heidi M. Peterson, Neng-Iong Chan, Nicholas J. K. Howden, Tim Burt, Fred Worrall, Fusuo Zhang, and Xuejun Liu †Lancaster Environment Centre, Lancaster University, Lancaster, LA1 4YQ, U.K. ‡Centre for Ecology and Hydrology, OX10 8BB, Wallingford, Oxfordshire, U.K. University of Notre Dame, Environmental Change Initiative, South Bend, Indiana 46617, United States Division of Agriculture, University of Arkansas, Fayetteville, Arkansas 72701, United States School of Life Sciences, Arizona State University, Tempe, Arizona 85287, United States Center for Resources, Environment and Food Security, China Agricultural University, Key Laboratory of Plant-Soil Interactions, Ministry of Education, Beijing 100193, P. R. China Minnesota Department of Agriculture, Pesticides and Fertilizer Management Division, Saint Paul, Minnesota 55155, United States University of Bristol, Queen’s School of Engineering, BS8 1TH, Bristol, U.K. Durham University, Department of Geography, DH1 3LE, Durham, U.K. Durham University, Department of Earth Sciences, DH1 3LE, Durham, U.K.
168 citations
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TL;DR: Evidence of optical coupling between the two band gap emissions was observed and total photoluminescence quantum efficiency of the dual emitting bands reached as high as 30% at room temperature under synthetic conditions not optimized for high emission.
Abstract: Dual quantum systems, 0-dimensional quantum dot, and 2-dimensional quantum wells were constructed in one II-VI semiconductor nanocrystal by the epitaxial growth of a barrier (ZnS) layer between the systems in solution. By alteration of the thickness of the barrier layer, the two quantum systems were controlled to either electronically coupled or decoupled. Evidence of optical coupling between the two band gap emissions was also observed. The position and relative intensity of the two emissions can be independently tuned by reaction conditions. Total photoluminescence quantum efficiency of the dual emitting bands reached as high as 30% at room temperature under synthetic conditions not optimized for high emission.
168 citations
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TL;DR: The dielectric response to infrared waves polarized along the tetragonal axis of a ferroelectric single-domain crystal of BaTiO3 was determined by time-domain THz spectroscopy and Fourier-transform infrared reflectivity techniques, showing an additional mode of the relaxation type in the THz spectral region, which accounts for the Curie-Weiss behavior of the c-axis dielectrics constant.
Abstract: The dielectric response to infrared waves polarized along the tetragonal axis of a ferroelectric single-domain crystal of ${\mathrm{BaTiO}}_{3}$ was determined by time-domain THz spectroscopy and Fourier-transform infrared reflectivity techniques. In addition to the three well-known polar lattice modes, the experiment shows an additional mode of the relaxation type in the THz spectral region, which accounts for the Curie-Weiss behavior of the $c$-axis dielectric constant. A comparison of experimental results with ab initio based effective-Hamiltonian simulations allows us to elucidate its relation to the order-disorder model of Comes, Lambert, and Guinier [Solid State Commun. 6, 715 (1968)].
168 citations
Authors
Showing all 17387 results
Name | H-index | Papers | Citations |
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Robert M. Califf | 196 | 1561 | 167961 |
Hugh A. Sampson | 147 | 816 | 76492 |
Stephen Boyd | 138 | 822 | 151205 |
Nikhil C. Munshi | 134 | 906 | 67349 |
Jian-Guo Bian | 128 | 1219 | 80964 |
Bart Barlogie | 126 | 779 | 57803 |
Robert R. Wolfe | 124 | 566 | 54000 |
Daniel B. Mark | 124 | 576 | 78385 |
E. Magnus Ohman | 124 | 622 | 68976 |
Benoît Roux | 120 | 493 | 62215 |
Robert C. Haddon | 112 | 577 | 52712 |
Rodney J. Bartlett | 109 | 700 | 56154 |
Baoshan Xing | 109 | 823 | 48944 |
Gareth J. Morgan | 109 | 1019 | 52957 |
Josep Dalmau | 108 | 568 | 49331 |