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University of California, Santa Barbara

EducationSanta Barbara, California, United States
About: University of California, Santa Barbara is a education organization based out in Santa Barbara, California, United States. It is known for research contribution in the topics: Population & Laser. The organization has 30281 authors who have published 80852 publications receiving 4626827 citations. The organization is also known as: UC Santa Barbara & UCSB.


Papers
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Journal ArticleDOI
TL;DR: This paper found that subjects are more concerned with increasing social welfare, sacrificing to increase the payoffs for all recipients, especially low-payoff recipients, than with reducing differences in payoffs.
Abstract: Departures from self-interest in economic experiments have recently inspired models of “social preferences” We design a range of simple experimental games that test these theories more directly than existing experiments Our experiments show that subjects are more concerned with increasing social welfare—sacrificing to increase the payoffs for all recipients, especially low-payoff recipients—than with reducing differences in payoffs (as supposed in recent models) Subjects are also motivated by reciprocity: They withdraw willingness to sacrifice to achieve a fair outcome when others are themselves unwilling to sacrifice, and sometimes punish unfair behavior

2,984 citations

Journal ArticleDOI
TL;DR: In this article, the authors review the theoretical models that have been developed to describe the physics of polyacetylene and related conducting polymers and summarize the relevant experimental results obtained for these materials.
Abstract: Self-localized nonlinear excitations (solitons, polarons, and bipolarons) are fundamental and inherent features of quasi-one-dimensional conducting polymers. Their signatures are evident in many aspects of the physical and chemical properties of this growing class of novel materials. As a result, these polymers represent an opportunity for exploring the novel phenomena associated with topological solitons and their linear confinement which results from weakly lifting the ground-state degeneracy. The authors review the theoretical models that have been developed to describe the physics of polyacetylene and related conducting polymers and summarize the relevant experimental results obtained for these materials. An attempt is made to assess the validity of the soliton model of polyacetylene and its generalization to related systems in which the ground-state degeneracy has been lifted.

2,907 citations

Journal ArticleDOI
TL;DR: The Variable Infiltration Capacity model, a novel blending procedure incorporating the spatial correlation structure of CCD-estimates to assign interpolation weights, is presented and it is shown that CHIRPS can support effective hydrologic forecasts and trend analyses in southeastern Ethiopia.
Abstract: The Climate Hazards group Infrared Precipitation with Stations (CHIRPS) dataset builds on previous approaches to ‘smart’ interpolation techniques and high resolution, long period of record precipitation estimates based on infrared Cold Cloud Duration (CCD) observations. The algorithm i) is built around a 0.05° climatology that incorporates satellite information to represent sparsely gauged locations, ii) incorporates daily, pentadal, and monthly 1981-present 0.05° CCD-based precipitation estimates, iii) blends station data to produce a preliminary information product with a latency of about 2 days and a final product with an average latency of about 3 weeks, and iv) uses a novel blending procedure incorporating the spatial correlation structure of CCD-estimates to assign interpolation weights. We present the CHIRPS algorithm, global and regional validation results, and show how CHIRPS can be used to quantify the hydrologic impacts of decreasing precipitation and rising air temperatures in the Greater Horn of Africa. Using the Variable Infiltration Capacity model, we show that CHIRPS can support effective hydrologic forecasts and trend analyses in southeastern Ethiopia.

2,895 citations

Journal ArticleDOI
TL;DR: In this paper, the Bose-Hubbard model was used to model the phase transition from the superfluid to the Mott insulator phase induced by varying the depth of the optical potential.
Abstract: The dynamics of an ultracold dilute gas of bosonic atoms in an optical lattice can be described by a Bose-Hubbard model where the system parameters are controlled by laser light We study the continuous (zero temperature) quantum phase transition from the superfluid to the Mott insulator phase induced by varying the depth of the optical potential, where the Mott insulator phase corresponds to a commensurate filling of the lattice (``optical crystal'') Examples for formation of Mott structures in optical lattices with a superimposed harmonic trap and in optical superlattices are presented

2,873 citations

Journal ArticleDOI
TL;DR: In this paper, the authors performed a comprehensive first-principles investigation of point defects in ZnO based on density functional theory within the local density approximation (LDA) as well as the $\mathrm{LDA}+U$ approach for overcoming the band-gap problem.
Abstract: We have performed a comprehensive first-principles investigation of native point defects in ZnO based on density functional theory within the local density approximation (LDA) as well as the $\mathrm{LDA}+U$ approach for overcoming the band-gap problem. Oxygen deficiency, manifested in the form of oxygen vacancies and zinc interstitials, has long been invoked as the source of the commonly observed unintentional $n$-type conductivity in ZnO. However, contrary to the conventional wisdom, we find that native point defects are very unlikely to be the cause of unintentional $n$-type conductivity. Oxygen vacancies, which have most often been cited as the cause of unintentional doping, are deep rather than shallow donors and have high formation energies in $n$-type ZnO (and are therefore unlikely to form). Zinc interstitials are shallow donors, but they also have high formation energies in $n$-type ZnO and are fast diffusers with migration barriers as low as $0.57\phantom{\rule{0.3em}{0ex}}\mathrm{eV}$; they are therefore unlikely to be stable. Zinc antisites are also shallow donors but their high formation energies (even in Zn-rich conditions) render them unlikely to be stable under equilibrium conditions. We have, however, identified a different low-energy atomic configuration for zinc antisites that may play a role under nonequilibrium conditions such as irradiation. Zinc vacancies are deep acceptors and probably related to the frequently observed green luminescence; they act as compensating centers in $n$-type ZnO. Oxygen interstitials have high formation energies; they can occur as electrically neutral split interstitials in semi-insulating and $p$-type materials or as deep acceptors at octahedral interstitial sites in $n$-type ZnO. Oxygen antisites have very high formation energies and are unlikely to exist in measurable concentrations under equilibrium conditions. Based on our results for migration energy barriers, we calculate activation energies for self-diffusion and estimate defect-annealing temperatures. Our results provide a guide to more refined experimental studies of point defects in ZnO and their influence on the control of $p$-type doping.

2,865 citations


Authors

Showing all 30652 results

NameH-indexPapersCitations
George M. Whitesides2401739269833
Yi Chen2174342293080
Simon D. M. White189795231645
George Efstathiou187637156228
Peidong Yang183562144351
David R. Williams1782034138789
Alan J. Heeger171913147492
Richard H. Friend1691182140032
Jiawei Han1681233143427
Gang Chen1673372149819
Alexander S. Szalay166936145745
Omar M. Yaghi165459163918
Carlos S. Frenk165799140345
Yang Yang1642704144071
Carlos Bustamante161770106053
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20241
2023150
2022528
20213,352
20203,653
20193,516