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Institution

University of California, Santa Barbara

EducationSanta Barbara, California, United States
About: University of California, Santa Barbara is a education organization based out in Santa Barbara, California, United States. It is known for research contribution in the topics: Population & Galaxy. The organization has 30281 authors who have published 80852 publications receiving 4626827 citations. The organization is also known as: UC Santa Barbara & UCSB.
Topics: Population, Galaxy, Laser, Quantum well, Quantum dot


Papers
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Journal ArticleDOI
TL;DR: In this article, the authors construct an explicit realistic SU(5) model in which softly broken supersymmetry is used to protect the Higgs doublets from quadratic mass renormalization.

1,916 citations

Journal ArticleDOI
01 Sep 1991-Nature
TL;DR: In this article, the authors used the atomic force microscope to measure the forces between a planar surface and an individual colloid particle, a silica sphere of radius 3.5 µm, attached to the force sensor in the microscope and measured in solutions of sodium chloride.
Abstract: THE forces between colloidal particles dominate the behaviour of a great variety of materials, including paints, paper, soil, clays and (in some circumstances) cells. Here we describe the use of the atomic force microscope to measure directly the force between a planar surface and an individual colloid particle. The particle, a silica sphere of radius 3.5 µm, was attached to the force sensor in the microscope and the force between the particle and the surface was measured in solutions of sodium chloride. The measurements are consistent with the double-layer theory1,2 of colloidal forces, although at very short distances there are deviations that may be attributed to hydration forces3–6 or surface roughness, and with previous studies on macroscopic systems4–6. Similar measurements should be possible for a wide range of the particulate and fibrous materials that are often encountered in industrial contexts, provided that they can be attached to the microscope probe.

1,900 citations

Journal ArticleDOI
07 Nov 2002
TL;DR: This paper attempts to present the status of the technology and the market with a view of highlighting both the progress and the remaining problems of the AlGaN/GaN high-electron mobility transistor.
Abstract: Wide bandgap semiconductors are extremely attractive for the gamut of power electronics applications from power conditioning to microwave transmitters for communications and radar. Of the various materials and device technologies, the AlGaN/GaN high-electron mobility transistor seems the most promising. This paper attempts to present the status of the technology and the market with a view of highlighting both the progress and the remaining problems.

1,849 citations

Journal ArticleDOI
TL;DR: The theoretical modeling of point defects in crystalline materials by means of electronic-structure calculations, with an emphasis on approaches based on density functional theory (DFT), is reviewed in this paper.
Abstract: Point defects and impurities strongly affect the physical properties of materials and have a decisive impact on their performance in applications. First-principles calculations have emerged as a powerful approach that complements experiments and can serve as a predictive tool in the identification and characterization of defects. The theoretical modeling of point defects in crystalline materials by means of electronic-structure calculations, with an emphasis on approaches based on density functional theory (DFT), is reviewed. A general thermodynamic formalism is laid down to investigate the physical properties of point defects independent of the materials class (semiconductors, insulators, and metals), indicating how the relevant thermodynamic quantities, such as formation energy, entropy, and excess volume, can be obtained from electronic structure calculations. Practical aspects such as the supercell approach and efficient strategies to extrapolate to the isolated-defect or dilute limit are discussed. Recent advances in tractable approximations to the exchange-correlation functional ($\mathrm{DFT}+U$, hybrid functionals) and approaches beyond DFT are highlighted. These advances have largely removed the long-standing uncertainty of defect formation energies in semiconductors and insulators due to the failure of standard DFT to reproduce band gaps. Two case studies illustrate how such calculations provide new insight into the physics and role of point defects in real materials.

1,846 citations

Journal ArticleDOI
D. S. Akerib1, S. Alsum2, Henrique Araujo3, X. Bai4, A. J. Bailey3, J. Balajthy5, P. Beltrame, Ethan Bernard6, A. Bernstein7, T. P. Biesiadzinski1, E. M. Boulton6, R. Bramante1, P. Brás8, D. Byram9, Sidney Cahn10, M. C. Carmona-Benitez11, C. Chan12, A.A. Chiller9, C. Chiller9, A. Currie3, J. E. Cutter13, T. J. R. Davison, A. Dobi14, J. E. Y. Dobson15, E. Druszkiewicz16, B. N. Edwards10, C. H. Faham14, S. Fiorucci12, R. J. Gaitskell12, V. M. Gehman14, C. Ghag15, K.R. Gibson1, M. G. D. Gilchriese14, C. R. Hall5, M. Hanhardt4, S. J. Haselschwardt11, S. A. Hertel6, D. P. Hogan6, M. Horn6, D. Q. Huang12, C. M. Ignarra17, M. Ihm6, R.G. Jacobsen6, W. Ji1, K. Kamdin6, K. Kazkaz7, D. Khaitan16, R. Knoche5, N.A. Larsen10, C. Lee1, B. G. Lenardo7, K. T. Lesko14, A. Lindote8, M.I. Lopes8, A. Manalaysay13, R. L. Mannino18, M. F. Marzioni, Daniel McKinsey6, D. M. Mei9, J. Mock19, M. Moongweluwan16, J. A. Morad13, A. St. J. Murphy20, C. Nehrkorn11, H. N. Nelson11, F. Neves8, K. O’Sullivan6, K. C. Oliver-Mallory6, K. J. Palladino17, E. K. Pease6, P. Phelps1, L. Reichhart15, C. Rhyne12, S. Shaw15, T. A. Shutt1, C. Silva8, M. Solmaz11, V. N. Solovov8, P. Sorensen14, S. Stephenson13, T. J. Sumner3, Matthew Szydagis19, D. J. Taylor, W. C. Taylor12, B. P. Tennyson10, P. A. Terman18, D. R. Tiedt4, W. H. To1, Mani Tripathi13, L. Tvrznikova6, S. Uvarov13, J.R. Verbus12, R. C. Webb18, J. T. White18, T. J. Whitis1, M. S. Witherell14, F.L.H. Wolfs16, Jilei Xu7, K. Yazdani3, Sarah Young19, Chao Zhang9 
TL;DR: This search yields no evidence of WIMP nuclear recoils and constraints on spin-independent weakly interacting massive particle (WIMP)-nucleon scattering using a 3.35×10^{4} kg day exposure of the Large Underground Xenon experiment are reported.
Abstract: We report constraints on spin-independent weakly interacting massive particle (WIMP)-nucleon scattering using a 3.35×10^{4} kg day exposure of the Large Underground Xenon (LUX) experiment. A dual-phase xenon time projection chamber with 250 kg of active mass is operated at the Sanford Underground Research Facility under Lead, South Dakota (USA). With roughly fourfold improvement in sensitivity for high WIMP masses relative to our previous results, this search yields no evidence of WIMP nuclear recoils. At a WIMP mass of 50 GeV c^{-2}, WIMP-nucleon spin-independent cross sections above 2.2×10^{-46} cm^{2} are excluded at the 90% confidence level. When combined with the previously reported LUX exposure, this exclusion strengthens to 1.1×10^{-46} cm^{2} at 50 GeV c^{-2}.

1,844 citations


Authors

Showing all 30652 results

NameH-indexPapersCitations
George M. Whitesides2401739269833
Yi Chen2174342293080
Simon D. M. White189795231645
George Efstathiou187637156228
Peidong Yang183562144351
David R. Williams1782034138789
Alan J. Heeger171913147492
Richard H. Friend1691182140032
Jiawei Han1681233143427
Gang Chen1673372149819
Alexander S. Szalay166936145745
Omar M. Yaghi165459163918
Carlos S. Frenk165799140345
Yang Yang1642704144071
Carlos Bustamante161770106053
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20241
2023150
2022528
20213,351
20203,653
20193,516