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Institution

University of Electronic Science and Technology of China

EducationChengdu, China
About: University of Electronic Science and Technology of China is a education organization based out in Chengdu, China. It is known for research contribution in the topics: Antenna (radio) & Dielectric. The organization has 50594 authors who have published 58502 publications receiving 711188 citations. The organization is also known as: UESTC.


Papers
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Journal ArticleDOI
TL;DR: In this paper, a three-dimensional nanoporous NiO film was fabricated using a two-step process through an electrochemical route, which exhibited a highly nanoporous structure and high surface area (264 m2 g−1).
Abstract: A three-dimensional nanoporous NiO film was fabricated using a two-step process through an electrochemical route. The as-prepared NiO film exhibited a highly nanoporous structure and high surface area (264 m2 g−1). The textural characterization of the film and its electrochemical performance as an electrochemical electrode were investigated. The electrode showed a high specific capacitance (1776 F g−1), power density (89 Wh kg−1), and energy density (16.5 kW kg−1). In addition, the electrode exhibited high and stable specific capacitance retention after a long cycle test in KOH solution. More importantly, the power density met the power requirements of the Partnership for a New Generation of Vehicles (PNGV).

265 citations

Journal ArticleDOI
TL;DR: In this article, a 22nm-thick yttrium iron garnet (YIG) film with a Gilbert damping constant α = (8.58 ± 0.21) × 10 -5
Abstract: Yttrium iron garnet (YIG) films that are in the nanometer thickness range and show extremely low damping are reported. The films were deposited via sputtering at room temperature and were then annealed in O 2 at high temperature. A 22-nm-thick YIG film showed a Gilbert damping constant α = (8.58 ± 0.21) × 10 -5 , which represents the lowest damping ever reported for nanometer-thick magnetic films. The film had a gyromagnetic ratio of |γ| = 2.83 MHz/Oe and a saturation induction of 4π M s = 1766 G, which are both very close to those of single-crystal YIG bulk materials. The film had a very smooth surface, with an rms surface roughness of about 0.13 nm.

265 citations

Journal ArticleDOI
TL;DR: This critically investigate the interdisciplinary literature on DLST and identifies the terms used to denote DLST in different disciplines, and formulate definitions of TSP, TUM, and DLST, which examine how TSP and TUM are connected to related fields in remote sensing.

264 citations

Journal ArticleDOI
TL;DR: In this article, a non-noble-metal MoO3 nanosheets act as an efficient nonnoble metal catalyst for electrochemical N2 fixation to NH3 with excellent selectivity at room temperature and atmospheric pressure.
Abstract: The synthesis of NH3 heavily depends on the energy-intensive Haber–Bosch process with a large amount of greenhouse gas emission. Electrochemical reduction offers a carbon-neutral process to convert N2 to NH3 at ambient conditions, but requires efficient and stable catalysts for the N2 reduction reaction. Mo-dependent nitrogenases and synthetic molecular complexes have attracted increasing attention for N2 fixation; however, less attention has been paid to Mo-based nanocatalysts for electrochemical N2 conversion to NH3. Herein, we report that MoO3 nanosheets act as an efficient non-noble-metal catalyst for electrochemical N2 fixation to NH3 with excellent selectivity at room temperature and atmospheric pressure. In 0.1 M HCl, this catalyst exhibits remarkable NRR activity with an NH3 yield of 4.80 × 10−10 mol s−1 cm−2 (29.43 μg h−1 mgcat.−1) and a faradaic efficiency of 1.9%. Moreover, this catalyst also shows high electrochemical stability and durability. Density functional theory calculations reveal that the outermost Mo atoms serve as the active sites for effective N2 adsorption.

264 citations


Authors

Showing all 51090 results

NameH-indexPapersCitations
Gang Chen1673372149819
Frede Blaabjerg1472161112017
Kuo-Chen Chou14348757711
Yi Yang143245692268
Guanrong Chen141165292218
Shuit-Tong Lee138112177112
Lei Zhang135224099365
Rajkumar Buyya133106695164
Lei Zhang130231286950
Bin Wang126222674364
Haiyan Wang119167486091
Bo Wang119290584863
Yi Zhang11643673227
Qiang Yang112111771540
Chun-Sing Lee10997747957
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20241
2023159
2022980
20217,384
20207,220
20196,976