University of New Mexico

About: University of New Mexico is a education organization based out in Albuquerque, New Mexico, United States. It is known for research contribution in the topics: Population & Poison control. The organization has 28870 authors who have published 64767 publications receiving 2578371 citations. The organization is also known as: UNM & Universitatis Novus Mexico.

Deletion of IRF-1, mapping to chromosome 5q31.1, in human leukemia and preleukemic myelodysplasia

Abstract: One of the most frequent cytogenetic abnormalities in human leukemia and myelodysplasia is an interstitial deletion within chromosome 5q. A tumor suppressor gene has been hypothesized to lie in 5q31, the smallest commonly deleted region. IRF-1, a gene whose product manifests anti-oncogenic activity, was mapped to 5q31.1. IRF-1 lies between IL-5 and CDC25C and is centromeric to IL-3 and GM-CSF. Among these genes, only IRF-1 was consistently deleted at one or both alleles in 13 cases of leukemia or myelodysplasia with aberrations of 5q31. Inactivating rearrangements of one IRF-1 allele, accompanied by deletion of the second allele, were also identified in one case of acute leukemia. Thus, IRF-1 may be a critically deleted gene in human leukemia and myelodysplasia.

The universal rotation curve of spiral galaxies II: the dark matter distribution out to the virial radius

Abstract: In the current ACDM cosmological scenario, N-body simulations provide us with a universal mass profile, and consequently a universal equilibrium circular velocity of the virialized objects, as galaxies. In this paper we obtain, by combining kinematical data of their inner regions with global observational properties, the universal rotation curve of disc galaxies and the corresponding mass distribution out to their virial radius. This curve extends the results of Paper I, concerning the inner luminous regions of Sb-Im spirals, out to the edge of the galaxy haloes.

Sun Exposure and Mortality From Melanoma

Abstract: Background: Melanoma incidence and survival are positively associated, both geographically and temporally. Solar elastosis, a histologic indicator of cutaneous sun damage, has also been positively associated with melanoma survival. Although these observations raise the possibility that sun exposure increases melanoma survival, they could be explained by an association between incidence and early detection of melanoma. We therefore evaluated the association between measures of skin screening and death from cutaneous melanoma. Methods: Case subjects (n = 528) from a population-based study of cutaneous melanoma were followed for an average of more than 5 years. Data, including measures of intermittent sun exposure, perceived awareness of the skin, skin selfscreening, and physician screening, were collected during in-person interviews and review of histopathology and histologic parameters (i.e., solar elastosis, Breslow thickness, and mitoses) for all of the lesions. Competing risk models were used to compute risk of death (hazard ratios [HRs], with 95% confi dence intervals [CIs]) from melanoma. All statistical tests were two-sided. Results: Sunburn, high intermittent sun exposure, skin awareness histories, and solar elastosis were statistically signifi cantly inversely associated with death from melanoma. Melanoma thickness, mitoses, ulceration, and anatomic location on the head and neck were statistically signifi cantly positively associated with melanoma death. In a multivariable competing risk analysis, skin awareness (with versus without, HR = 0.5, 95% CI = 0.3 to 0.9, P = .022) and solar elastosis (present versus absent, HR = 0.4, 95% CI = 0.2 to 0.8, P = .009) were strongly and independently associated with melanoma death after adjusting for Breslow thickness, mitotic index, and head and neck location, which were also independently associated with death. Conclusions: Sun exposure is associated with increased survival from melanoma. [J Natl Cancer Inst 2005;97:195 – 9]

Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors

Abstract: Compound semiconductor materials such as gallium arsenide and indium arsenide have outstanding electronic properties, but are costly to process and cannot, on their own, compete with silicon when it comes to low-cost fabrication. But as the relentless miniaturization of silicon electronics is reaching its limits, an alternative route of enhanced device performance is becoming more attractive: the integration of compound semiconductors within silicon. Ali Javey and colleagues now present a promising new concept to integrate ultrathin layers of single-crystal indium arsenide on silicon-based substrates with an epitaxial transfer method, a technique borrowed from large-area optoelectronics. With this technique, involving the use of an elastomeric stamp to lift off indium arsenide nanowires and transfer them to a silicon-based substrate, the authors fabricate thin film transistors with excellent device performance. A potential route to enhancing the performance of electronic devices is to integrate compound semiconductors, which have superior electronic properties, within silicon, which is cheap to process. These authors present a promising new concept to integrate ultrathin layers of single-crystal indium arsenide on silicon-based substrates with an epitaxial transfer method borrowed from large-area optoelectronics. With this technique, the authors fabricate thin-film transistors with excellent device performance. Over the past several years, the inherent scaling limitations of silicon (Si) electron devices have fuelled the exploration of alternative semiconductors, with high carrier mobility, to further enhance device performance1,2,3,4,5,6,7,8. In particular, compound semiconductors heterogeneously integrated on Si substrates have been actively studied7,9,10: such devices combine the high mobility of III–V semiconductors and the well established, low-cost processing of Si technology. This integration, however, presents significant challenges. Conventionally, heteroepitaxial growth of complex multilayers on Si has been explored9,11,12,13—but besides complexity, high defect densities and junction leakage currents present limitations in this approach. Motivated by this challenge, here we use an epitaxial transfer method for the integration of ultrathin layers of single-crystal InAs on Si/SiO2 substrates. As a parallel with silicon-on-insulator (SOI) technology14, we use ‘XOI’ to represent our compound semiconductor-on-insulator platform. Through experiments and simulation, the electrical properties of InAs XOI transistors are explored, elucidating the critical role of quantum confinement in the transport properties of ultrathin XOI layers. Importantly, a high-quality InAs/dielectric interface is obtained by the use of a novel thermally grown interfacial InAsO x layer (~1 nm thick). The fabricated field-effect transistors exhibit a peak transconductance of ~1.6 mS µm−1 at a drain–source voltage of 0.5 V, with an on/off current ratio of greater than 10,000.