Varian Associates

About: Varian Associates is a based out in . It is known for research contribution in the topics: Beam (structure) & Amplifier. The organization has 2160 authors who have published 2591 publications receiving 46002 citations.

Stacked multijunction photovoltaic converters

Abstract: Solar cells with different bandgaps are stacked to form a multijunction photovoltaic converter with a high conversion efficiency. By stacking the cells mechanically rather than by growing them all at one time, the most convenient combination of materials may be selected for the cells. The stacking is completed by means of a glass sealing layer with moats containing inter-cell contacts which are bonded to the cells.

Sputtering apparatus with a rotating magnet array having a geometry for specified target erosion profile

Abstract: A magentron sputtering apparatus includes a rotatable magnet which is either concave or convex. For one magnet structure, at least a portion of the centerline of the magnet lies along a curve defined by ##EQU1## where ξ(r) is a preselected erosion profile. When stationary, the magnet generates a localized magnetic field of approximately constant width. In operation, when the magnet is rotated, it generates the preselected erosion profile in the target. The preselected erosion profile may be constant.

Sputter module for modular wafer processing system

Abstract: A machine for sputter deposition of a wafer workpiece also sputters on the wafer supporting mechanism. This causes a need for cleaning or replacement of the support mechanism. A sputter machine is provided in which the supporting mechanism can be isolated from the sputtering source, the pumps and other processing apparatus for cleaning without exposing the entire machine to atmosphere.

Transport Properties of La F 3

Abstract: We report measurements of the lattice and bulk thermal expansion, fluorine nuclear magnetic resonance, and electrical conductivity of single-crystal La${\mathrm{F}}_{3}$ in the temperature range 300-1000\ifmmode^\circ\else\textdegree\fi{}K. In the lower portion of this temperature range, the measurements yield activation energies for the formation of Schottky defects of \ensuremath{\sim}0.07 eV and for fluorine ion diffusion of \ensuremath{\sim}0.45 eV. The activation energy for diffusion appears to decrease at higher temperatures. We propose a model for the crystal with low activation energy for the formation of neutral defects, and a higher energy for defect dissociation and diffusion. The apparent changes of activation energy are ascribed to the excitation of lattice vibrations near the Debye temperature.

Collimated deposition apparatus and method

Abstract: Sputtering apparatus and method which are particularly suitable for forming step coatings. A workpiece is supported in a chamber, particles are emitted from a sputter source in a substantially uniform manner throughout an area of greater lateral extent than the workpiece, the pressure within the chamber is maintained at a level which is sufficiently low to prevent substantial scattering of the particles between the source and the workpiece, and the particles are passed through a collimating filter having a plurality of transmissive cells with a length to diameter ratio on the order of 1:1 to 3:1 positioned between the source and the workpiece to limit the angles at which the particles can impinge upon the workpiece.