Institution
Varian Associates
About: Varian Associates is a based out in . It is known for research contribution in the topics: Beam (structure) & Wafer. The organization has 2160 authors who have published 2591 publications receiving 46002 citations.
Topics: Beam (structure), Wafer, Amplifier, Cathode, Resonance
Papers published on a yearly basis
Papers
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22 citations
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TL;DR: In this article, a 1.054-nm laser pulses in excess of +or- 10 wavenumbers (+or- 300 GHz) were demonstrated, where the wavelength shifter consists of synchronous microwave and optical waveguides fabricated monolithically on LiNbO/sub 3.
Abstract: Optical wavelength shifting of 1.054-nm laser pulses in excess of +or- 10 wavenumbers (+or- 300 GHz) was demonstrated. The wavelength shifter consists of synchronous microwave and optical waveguides fabricated monolithically on LiNbO/sub 3/. An optical pulse experiences a constant refractive index gradient that travels with the pulse and causes the wavelength shift. >
22 citations
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14 Feb 1977TL;DR: In this article, the source and gate electrodes are placed on opposite faces of the active layer of the transistor and the drain electrode is placed on the same side of active layer as the source.
Abstract: By positioning the source and gate electrodes on the opposite faces of the active layer, these electrodes can be brought closer together and may have their adjacent edges mutually aligned or even overlapping. The series source resistance and channel resistance can be greatly reduced, because of this closer spacing, which can not be attained when the electrodes are coplanar. By also locating the drain electrode on the same side of the active layer as the source, the source-to-drain spacing can be significantly reduced, reducing channel length and improving the high frequency performance of the transistor. Further, because the electrodes are located on both sides of the active layer, it is possible to provide a large area contact on the bottom, or substrate, side of the epitaxial wafer structure which can advantageously be used to provide a low thermal and electrical resistance connection for the source contact, for example. Finally, the fact that one or more of the electrodes can be contacted from the bottom of the wafer makes possible the simple parallel interconnection of electrodes to easily form multiple element power transistors.
22 citations
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16 Sep 1992TL;DR: In this article, an electronic braking device for asynchronous motors with magnetic suspensions was proposed, comprising a circuit for recovering the kinetic energy of the rotor during decelerating phase due to the absence of feeding electric current from the mains, which is adapted to return an electric current that can be used for the emergency feeding the magnetic suspensions.
Abstract: The invention relates to an electronic braking device for asynchronous motors particularly for asynchronous motor equipped with magnetic suspensions such as those employed in turbomolecular pumps, comprising a circuit for recovering the kinetic energy of the rotor during the decelerating phase due to the absence of feeding electric current from the mains, which is adapted to return an electric current that can be used for the emergency feeding the magnetic suspensions (8). Such circuit can further comprise an auxiliary battery (10) for feeding a circuit (9) controlling the magnetic suspensions (8) during the final phase of the stopping cycle of the motor (5) caused by the absence of mains current.
22 citations
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TL;DR: In this paper, a mathematical presentation of linear accelerator fundamental design parameters leads to optimization formulae for X-ray output and operational stability, and an analysis of a chopped prebunched injection system is presented together with a comparison of different types of buncher design with emphasis on obtaining narrow energy spectrum small cross-section electron beams.
Abstract: Part I A mathematical presentation of linear accelerator fundamental design parameters leads to optimization formulae for X-ray output and operational stability. A narrow spread of electron energies is desirable in most linear accelerator applications and especially when post-acceleration beam bending is utilized to project a stable high energy X-ray beam at right angles to the accelerator waveguide. Part II Some consideration is given to electron source optics and an analysis of a chopped prebunched injection system is presented together with a comparison of different types of buncher design with emphasis on obtaining narrow energy spectrum small cross-section electron beams. A method of analysing prebunched injection current and buncher acceptance characteristics is described
22 citations
Authors
Showing all 2160 results
Name | H-index | Papers | Citations |
---|---|---|---|
Richard R. Ernst | 96 | 352 | 53100 |
Fred E. Regnier | 88 | 412 | 25169 |
Norbert Schuff | 88 | 280 | 25442 |
James S. Hyde | 79 | 412 | 35755 |
Carl Djerassi | 77 | 1523 | 37630 |
Ray Freeman | 73 | 269 | 22872 |
Robert Kaptein | 72 | 436 | 24275 |
Minghwei Hong | 58 | 515 | 14309 |
Jesse L. Beauchamp | 55 | 275 | 10971 |
Herbert Kroemer | 52 | 237 | 9936 |
Hans J. Jakobsen | 49 | 274 | 8401 |
James N. Eckstein | 42 | 168 | 6634 |
Ivan Bozovic | 31 | 128 | 5060 |
John Glushka | 31 | 76 | 3004 |
Gary Virshup | 24 | 113 | 2374 |