Institution
Varian Associates
About: Varian Associates is a based out in . It is known for research contribution in the topics: Beam (structure) & Amplifier. The organization has 2160 authors who have published 2591 publications receiving 46002 citations.
Topics: Beam (structure), Amplifier, Wafer, Cathode, Resonance
Papers published on a yearly basis
Papers
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30 Apr 1979TL;DR: In this paper, a work chamber in which workpieces are treated under high vacuum is described, where the inner chamber has a capacity for a plurality of workpieces, and the outer chamber has an outer chamber, vacuum means for evacuating the inner and outer chambers, a first valve for sealing between the work chamber and inner chamber, a second valve was used to seal the outer and inner chambers, and loading means for loading workpieces through the third valve into the outer from the atmosphere.
Abstract: In apparatus having a work chamber in which workpieces are treated under high vacuum, that improvement comprising an inner chamber having a capacity for a plurality of workpieces, an outer chamber, vacuum means for evacuating the inner and outer chambers, a first valve for sealing between the work chamber and the inner chamber, a second valve for sealing between the inner and outer chambers, a third valve for sealing between the outer chamber and the atmosphere, loading means for loading workpieces through the third valve into the outer chamber from the atmosphere, and transfer means for transferring individual workpieces through the second valve between the inner and outer chambers, and for transferring individual workpieces through the first valve between the inner chamber and the work chamber.
20 citations
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27 Aug 1982TL;DR: In this paper, a planar blackbody source is used for reflow of a phosphosilicate glass (PSG) layer applied to a semiconductor wafer, and the wafer is placed in a processing chamber in parallel alignment with the planar source, where the source rapidly and uniformly heats the PSG layer to a temperature at which plastic flow occurs.
Abstract: In a method for reflow of a phosphosilicate glass (PSG) layer applied to a semiconductor wafer, the wafer is placed in a processing chamber in parallel alignment with a planar blackbody source. The chamber is evacuated, and the source rapidly and uniformly heats the PSG layer to a temperature at which plastic flow occurs. The blackbody source provides significant radiation in the 7-10 micron portion of the infrared spectrum. The thermal treatment is typically completed in 8-15 seconds, thereby avoiding impurity redistribution in the semiconductor device.
20 citations
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TL;DR: In this article, two sampling schemes for quadrature detection are described. And the effects of aliasing are described for both sampling schemes, in both one- and two-dimensional spectra.
20 citations
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05 Dec 1977TL;DR: In this paper, the circumference of a crystal rod is monitored and controlled during the rod growing process by providing relative rotation between the growing crystal rod and a melt of the crystal material as the rod is being pulled from the melt according to the Czochralski method.
Abstract: The circumference of a crystal rod is monitored and controlled during the rod growing process by providing relative rotation between the growing crystal rod and a melt of the crystal material as the rod is being pulled from the melt according to the Czochralski method, and by using a radiation-sensitive control system for adjusting growth conditions of the rod in response to variations in a radiation signal which is indicative of the circumferential dimension of the rod. An electronic circuit integrates the radiation signal over each complete rotation of the rod, thereby eliminating unnecessary adjustment of the growth conditions in response to diametric variations of the rod which recur regularly in each rotation.
20 citations
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13 Apr 1990TL;DR: In this paper, a high-frequency amplifier tube includes a grid that responds to an r.f. input signal to current modulate a linear electron beam derived from a cathode.
Abstract: A high-frequency amplifier tube includes a grid that responds to an r.f. input signal to current modulate a linear electron beam derived from a cathode. A resonant structure establishes an electric field in a region between the grid and cathode. First and second resonant cavities downstream of the grid in the named order are coupled to the modulated electron beam. The first cavity responds to the r.f. signal to velocity modulate the current-modulated beam. The second cavity is coupled to the current- and velocity-modulated beam for deriving an output signal. An AC connection from a source of the input signal is established to transformer coupling in the first cavity. A phase-shift circuit adjusts the relative phase of the modulation on the beam as it passes through the first cavity and the phase of the r.f. signal as coupled to the first cavity so that fields induced in the cavity by the modulated beam are optimally phased with respect to fields established in the first cavity by the transformer coupling. The phase-shift circuit is connected between the first cavity and the resonant structure or between the second cavity and the resonant structure. A resonant slow-wave circuit is included in the electron-permeable or in an electrically conductive support structure for the grid.
20 citations
Authors
Showing all 2160 results
Name | H-index | Papers | Citations |
---|---|---|---|
Richard R. Ernst | 96 | 352 | 53100 |
Fred E. Regnier | 88 | 412 | 25169 |
Norbert Schuff | 88 | 280 | 25442 |
James S. Hyde | 79 | 412 | 35755 |
Carl Djerassi | 77 | 1523 | 37630 |
Ray Freeman | 73 | 269 | 22872 |
Robert Kaptein | 72 | 436 | 24275 |
Minghwei Hong | 58 | 515 | 14309 |
Jesse L. Beauchamp | 55 | 275 | 10971 |
Herbert Kroemer | 52 | 237 | 9936 |
Hans J. Jakobsen | 49 | 274 | 8401 |
James N. Eckstein | 42 | 168 | 6634 |
Ivan Bozovic | 31 | 128 | 5060 |
John Glushka | 31 | 76 | 3004 |
Gary Virshup | 24 | 113 | 2374 |