scispace - formally typeset
Search or ask a question
Institution

Varian Associates

About: Varian Associates is a based out in . It is known for research contribution in the topics: Beam (structure) & Amplifier. The organization has 2160 authors who have published 2591 publications receiving 46002 citations.
Topics: Beam (structure), Amplifier, Wafer, Cathode, Resonance


Papers
More filters
Proceedings ArticleDOI
Howard Roberts Jory1, S. Evans, J. Moran, J. Shively, D. Stone, G. Thomas 
01 Jan 1980
TL;DR: In this article, a pulsed and CW gyrotron oscillators have been designed and constructed for use in electron cyclotron resonance heating in plasma fusion experiments, and the pulsed design has been operated at duty factors of 5% and pulse lengths up to 40 msec.
Abstract: Pulsed and CW gyrotron oscillators have been designed and constructed for use in electron cyclotron resonance heating in plasma fusion experiments. The tubes are designed for 200 kW output at 28 GHz with beam input of 80 kV and 8 A. The pulsed design has been operated at duty factors of 5% and pulse lengths up to 40 msec. The CW design has produced output of 200 kW CW with an efficiency of 50%. It also operated with 52% efficiency at an output level of 170 kW CW. The tubes are designed for power output in the TE 02 circular electric mode in oversize (2.5 inch diameter) circular waveguide. Some investigations of mode purity of the output will be described. The design and operation of waveguide components such as bends and mode filters for use with the gyrotrons will be discussed.

20 citations

Journal ArticleDOI
TL;DR: In this paper, the relative importance of various scattering mechanisms in different composition ranges have been elucidated and it is found that space-charge scattering plays an important role in limiting electron mobility at 300 K for 0 or = 0.4 at high temperatures.
Abstract: Temperature-dependent measurements in the range 20< or =T< or =600 K have been made on undoped and Si-doped metalorganic chemical-vapor-deposition--grown Al/sub x/Ga/sub 1-x/As (0< or =x< or =0.6) on GaAs. Data obtained from Hall and high-field measurements with the use of the probe technique have been analyzed. The transport parameters in the samples have been obtained from analysis of data and the relative importance of the various scattering mechanisms in different composition ranges have been elucidated. It is found that space-charge scattering plays an important role in limiting electron mobility at 300 K for 0 or =0.4 at 300 K and similar features observed in some samples with x<0.4 at high temperatures have been attributed to electron transfer from the substrate to the epitaxial layers.

20 citations

Patent
06 Apr 1987
TL;DR: A modular wafer processing machine based on interconnected handling units (400, 40a, 40b) having wafer handling arms (252, 256) is described in this paper. Each unit can pass a wafer to another unit in the same vacuum environment to a processing module.
Abstract: A modular wafer processing machine (1, 2) which is based on interconnected handling units (400, 40a, 40b) having wafer handling arms (252, 256). Each unit can pass a wafer to another unit in the same vacuum environment to a processing module (30f, 30g, 300a-e).

20 citations

Journal ArticleDOI
TL;DR: In this article, the epitaxial growth of Mg-doped GaAs by the organometallic vapour phase (OM-VPE) has been achieved for the first time.
Abstract: The epitaxial growth of Mg-doped GaAs by the organometallic vapour phase epitaxial process (OM-VPE) has been achieved for the first time. The doping is controllable over a wide range of input fluxes of bis (cyclopentadienyl) magnesium, (C5H5)2Mg, the organometallic precursor to Mg.

20 citations

Patent
04 Mar 1982
TL;DR: In this article, a charged particle beam exposure system for selectively irradiating the surface of a workpiece to be patterned is described, where an image of an L-shaped aperture is focussed on a shaping aperture with two adjacent orthogonal edges and is deflected relative to the shaping aperture to provide an intermediate line of desired length, width and orientation.
Abstract: A charged particle beam exposure system for selectively irradiating the surface of a workpiece to be patterned. The beam has a cross-section at the surface of the workpiece comprising a projected line on variable length, of controlled width and one of two orthogonal orientations. An image of an L-shaped aperture is focussed on a shaping aperture with two adjacent orthogonal edges and is deflected relative to the shaping aperture to provide an intermediate line of desired length, width and orientation. The intermediate line is defined by the portion of the image of the L-shaped aperture which is superimposed on the shaping aperture. An image of the intermediate line is projected onto the workpiece to form the projected line which is scanned over the surface of the workpiece. Radial beam spreading is reduced and pattern line resolution is improved in the disclosed system.

20 citations


Authors

Showing all 2160 results

NameH-indexPapersCitations
Richard R. Ernst9635253100
Fred E. Regnier8841225169
Norbert Schuff8828025442
James S. Hyde7941235755
Carl Djerassi77152337630
Ray Freeman7326922872
Robert Kaptein7243624275
Minghwei Hong5851514309
Jesse L. Beauchamp5527510971
Herbert Kroemer522379936
Hans J. Jakobsen492748401
James N. Eckstein421686634
Ivan Bozovic311285060
John Glushka31763004
Gary Virshup241132374
Network Information
Related Institutions (5)
Lawrence Livermore National Laboratory
48.1K papers, 1.9M citations

78% related

Bell Labs
59.8K papers, 3.1M citations

78% related

IBM
253.9K papers, 7.4M citations

78% related

Samsung
163.6K papers, 2M citations

77% related

Argonne National Laboratory
64.3K papers, 2.4M citations

77% related

Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20171
20161
20122
20111
20104
20093