Institution
Varian Associates
About: Varian Associates is a based out in . It is known for research contribution in the topics: Beam (structure) & Wafer. The organization has 2160 authors who have published 2591 publications receiving 46002 citations.
Topics: Beam (structure), Wafer, Amplifier, Cathode, Resonance
Papers published on a yearly basis
Papers
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TL;DR: The lipid-containing membrane of Rauscher murine leukemia virus was studied using stearic acid spin labels with the nitroxide ring on the C5 and C16 positions and the environment was found to be much more rigid than that of the C16 spin label.
Abstract: The lipid-containing membrane of Rauscher murine leukemia virus was studied using stearic acid spin labels with the nitroxide ring on the C5 and C16 positions. The environment of the C5 spin label was found to be much more rigid than that of the C16 spin label. This result, which parallels similar observations in red cell membranes and influenza virus, suggests that the lipid phase of Rauscher murine leukemia virus is arranged in a bilayer.
20 citations
20 citations
Patent•
23 Oct 1978TL;DR: In this article, a method for detecting the radioactivity of a radioactive species using a cell packed with such a fluorescent composition is also disclosed, which is useful in thin-layer chromatography.
Abstract: A fluorescent composition useful in thin-layer chromatography comprises an inert porous particle having a fluorescent material fixedly attached by covalent chemical bonding to the surface thereof. A process for synthesizing this fluorescent composition is disclosed. A method for detecting the radioactivity of a radioactive species using a cell packed with such a fluorescent composition is also disclosed.
20 citations
Patent•
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TL;DR: In this paper, a method employing low pressure plasma having high electron density for rapid oxide etching employing hydrogen and argon and specific electron clyclotron resonance (ECR) operating parameters in an ECR having a non-oxygen contributing environment in the reaction chamber.
Abstract: Method employing low pressure plasma having high electron density for rapid oxide etching employing hydrogen and argon and specific electron clyclotron resonance (ECR) operating parameters in an ECR having a non-oxygen contributing environment in the reaction chamber.
20 citations
TL;DR: In this paper, the authors studied the Be incorporation and diffusion in heavily doped MBE grown GaAs epilayers and found that the profile is significantly different from the designed structure.
20 citations
Authors
Showing all 2160 results
| Name | H-index | Papers | Citations |
|---|---|---|---|
| Richard R. Ernst | 96 | 352 | 53100 |
| Fred E. Regnier | 88 | 412 | 25169 |
| Norbert Schuff | 88 | 280 | 25442 |
| James S. Hyde | 79 | 412 | 35755 |
| Carl Djerassi | 77 | 1523 | 37630 |
| Ray Freeman | 73 | 269 | 22872 |
| Robert Kaptein | 72 | 436 | 24275 |
| Minghwei Hong | 58 | 515 | 14309 |
| Jesse L. Beauchamp | 55 | 275 | 10971 |
| Herbert Kroemer | 52 | 237 | 9936 |
| Hans J. Jakobsen | 49 | 274 | 8401 |
| James N. Eckstein | 42 | 168 | 6634 |
| Ivan Bozovic | 31 | 128 | 5060 |
| John Glushka | 31 | 76 | 3004 |
| Gary Virshup | 24 | 113 | 2374 |