Institution
Varian Associates
About: Varian Associates is a based out in . It is known for research contribution in the topics: Beam (structure) & Amplifier. The organization has 2160 authors who have published 2591 publications receiving 46002 citations.
Topics: Beam (structure), Amplifier, Wafer, Cathode, Resonance
Papers published on a yearly basis
Papers
More filters
••
TL;DR: In this article, the epitaxial growth of lattice matched In 0.53 Ga 0.47 As on InP substrates has been investigated using optical microscopy, X-ray diffraction, photoluminescence and van der Pauw analysis.
19 citations
•
14 Jul 1975TL;DR: In this paper, a translucent plastic mask or overlay which fits over the keyboard of the computer input/output station is used to label the keys with their functions according to the selected mode of operation.
Abstract: The device is a translucent plastic mask or overlay which fits over the keyboard of the computer input/output station to label the keys with their functions according to the selected mode of operation. A projecting portion along one of the edges of the mask extends into a slot adjacent the keyboard where a series of code segments forms an optical code which is read by a corresponding series of lamp and photocell pairs to provide the computer with the information to cause its mode of operation to correspond with the keyboard legends.
19 citations
••
TL;DR: The structure of a 2,3,4 trisubstituted furanoid lignan, designated sylvone, was established as 1 from detailed spectroscopical and chemical studies as discussed by the authors.
19 citations
•
25 Oct 1989TL;DR: In this paper, the surface film is formed by oxygen plasma treatment of the silcone rubber layer and a high purity polymer layer is fabricated by evacuating the mold cavity and the resin container prior to injection of resin.
Abstract: Thermal transfer between a semiconductor wafer and a platen during vacuum processing is provided through a soft, thermally-conductive polymer layer having a thin, hard surface film. The soft polymer layer, which is preferably silicone rubber containing thermally-conductive particles, conforms to surface irregularities on the wafer and has low thermal resistance. The surface film is preferably silicon dioxide in the form of a multiplicity of flat plates integrally formed on the silicone rubber. Adherence of the wafer and of foreign matter to the polymer layer is prevented by the surface film. In addition, the underlying polymer layer is protected by the surface film. A high purity polymer layer is fabricated by evacuating the mold cavity and the resin container prior to injection of resin. The mold for the polymer layer utilizes a hard, smooth mold release surface and a resilient gasket between the platen and the mold release surface. The gasket establishes the dimensions of the polymer layer and seals the mold cavity. The surface film is formed by oxygen plasma treatment of the silcone rubber layer.
19 citations
•
11 Jul 1996TL;DR: In this article, a method of ion collection over a wide mass-to-charge range from continuous ion source into a quadrupole ion trap filled with a buffer gas directing an ion beam, from an external ion source to a radio frequency ion trap through a gating device for a predetermined period of accumulation time to allow the beam to enter the trap, trapping ions over a range of masses by applying a radio-frequency voltage to the trap and changing an amplitude of the radio frequency voltage adiabatically to achieve a uniform trapping efficiency for ion over a predetermined mass range.
Abstract: A method of ion collection over a wide mass-to-charge range from continuous ion source into a quadrupole ion trap filled with a buffer gas directing an ion beam, from an external ion source to a radio frequency ion trap through a gating device for a predetermined period of accumulation time to allow the beam to enter the trap, trapping ions over a range of masses by applying a radio frequency voltage to the trap and changing an amplitude of the radio frequency voltage adiabatically to achieve a uniform trapping efficiency for ions over a predetermined mass range. The predetermined period of accumulation time may be divided into a plurality of segments, and the amplitude of the radio-frequency voltage is changing adiabatically within each segment.
19 citations
Authors
Showing all 2160 results
Name | H-index | Papers | Citations |
---|---|---|---|
Richard R. Ernst | 96 | 352 | 53100 |
Fred E. Regnier | 88 | 412 | 25169 |
Norbert Schuff | 88 | 280 | 25442 |
James S. Hyde | 79 | 412 | 35755 |
Carl Djerassi | 77 | 1523 | 37630 |
Ray Freeman | 73 | 269 | 22872 |
Robert Kaptein | 72 | 436 | 24275 |
Minghwei Hong | 58 | 515 | 14309 |
Jesse L. Beauchamp | 55 | 275 | 10971 |
Herbert Kroemer | 52 | 237 | 9936 |
Hans J. Jakobsen | 49 | 274 | 8401 |
James N. Eckstein | 42 | 168 | 6634 |
Ivan Bozovic | 31 | 128 | 5060 |
John Glushka | 31 | 76 | 3004 |
Gary Virshup | 24 | 113 | 2374 |