Institution
Varian Associates
About: Varian Associates is a based out in . It is known for research contribution in the topics: Beam (structure) & Amplifier. The organization has 2160 authors who have published 2591 publications receiving 46002 citations.
Topics: Beam (structure), Amplifier, Wafer, Cathode, Resonance
Papers published on a yearly basis
Papers
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TL;DR: Saturation Transfer Electron Paramagnetic Resonance (ST-EPR) spectroscopy has been used to investigate the rate of angular reorientation of O 2 − adsorbed on supported metallic silver surfaces at a variety of temperatures.
16 citations
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01 Jul 1990TL;DR: In this paper, the authors describe a high quantum efficiency imaging phosphor diode optimized for 500-700 nm sensitivity, which is designed to function as a low noise factor optical amplifier, and discusses the engineering tradeoffs associated with fabricating a GaAs/AlGaAs cathode with high short wavelength QE.
Abstract: This paper will describe a high quantum efficiency imaging phosphor diode optimized for 500-700 nm sensitivity. Potential applications for this tube include undersea imaging and detection of 530-nm laser light. The tube is designed to function as a low noise factor optical amplifier. The tube consists of an 18-mm CsO activated GaAs/AlGaAs photocathode and a high resolution P46 phosphor screen enclosed in a Kovar/ceramic vacuum envelope. Measured results for quantum efficiency (QE), MTF, dark current, noise factor, operating life, response time and gain are presented. Finally, the paper discusses the engineering tradeoffs associated with fabricating a GaAs/AlGaAs cathode with high short wavelength QE.
16 citations
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20 Jun 1983TL;DR: In this article, multichromatic radiation is applied rapidly to silicon or polysilicon placed in contact with a silicide-forming metal to form metal silicide having low resistivity without deleterious later diffusion of dopants in adjacent single crystal or poly-silicon.
Abstract: Multichromatic radiation is applied rapidly to silicon or polysilicon placed in contact with a silicide-forming metal to form metal silicide having low resistivity without deleterious later diffusion of dopants in adjacent single crystal or polysilicon. The radiation is applied to a metal deposited on silicon or to a metal codeposited with or to silicide deposited from a metal-Si composite target. The temperatures preferably rise to between 600° C. and 1200° C. and the total heating periods are less than about one minute, with 10 to 30 seconds being typical.
16 citations
Authors
Showing all 2160 results
Name | H-index | Papers | Citations |
---|---|---|---|
Richard R. Ernst | 96 | 352 | 53100 |
Fred E. Regnier | 88 | 412 | 25169 |
Norbert Schuff | 88 | 280 | 25442 |
James S. Hyde | 79 | 412 | 35755 |
Carl Djerassi | 77 | 1523 | 37630 |
Ray Freeman | 73 | 269 | 22872 |
Robert Kaptein | 72 | 436 | 24275 |
Minghwei Hong | 58 | 515 | 14309 |
Jesse L. Beauchamp | 55 | 275 | 10971 |
Herbert Kroemer | 52 | 237 | 9936 |
Hans J. Jakobsen | 49 | 274 | 8401 |
James N. Eckstein | 42 | 168 | 6634 |
Ivan Bozovic | 31 | 128 | 5060 |
John Glushka | 31 | 76 | 3004 |
Gary Virshup | 24 | 113 | 2374 |