Institution
Varian Associates
About: Varian Associates is a based out in . It is known for research contribution in the topics: Beam (structure) & Amplifier. The organization has 2160 authors who have published 2591 publications receiving 46002 citations.
Topics: Beam (structure), Amplifier, Wafer, Cathode, Resonance
Papers published on a yearly basis
Papers
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09 Oct 1996TL;DR: In this article, a method of detecting ions of a single ion species that have been selectively stored in a quadrupole ion trap mass spectrometer is disclosed, which allows ejection of all of the ions in a time period which is nearly twenty times faster than the prior art resonance ejection scanning technique, and without the artifacts in the signal current caused by frequency beating.
Abstract: A method of detecting ions of a single ion species that have been selectively stored in a quadrupole ion trap mass spectrometer is disclosed. After the selected ion species is isolated the trapping field in rapidly changed to cause ions to leave the ion trap in the axial direction where they are detected using a conventional detector. Preferably, a dipole pulse is applied to the ion trap simultaneously with the reduction of the trapping field, such that all of the ions are caused to leave the trap in a single direction, doubling the ion current over prior art methods. The method of the invention allows ejection of all of the ions in a time period which is nearly twenty times faster than the prior art resonance ejection scanning technique, and without the artifacts in the signal current caused by frequency beating.
14 citations
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14 citations
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TL;DR: In this article, the authors describe the construction and performance of short solenoidal NMR coils having enhanced usable volume by allowing the RF magnetic field B 1 on the axis of a standard solenoid to vary within prescribed limits along the coil axis.
14 citations
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02 Aug 1968TL;DR: In this paper, a charge consisting of gallium, gallium arsenide, and tin was heated to produce a liquid molten solution with the atom fraction of tin being below 80 percent in the solution.
Abstract: A charge consisting of gallium, gallium arsenide, and tin was heated to produce a liquid molten solution of gallium, arsenic, and tin with the atom fraction of tin being below 80 percent in the solution. The charge and a gallium arsenide substance are preferably heated in a refractory boat contained within a hydrogen furnace tube, such boat being tilted at an angle such that the substrate wafer is above the liquid level of the solution. The boat is then tipped to cover the heated surface of the gallium arsenide substrate member with the liquified charge solution. The furnace is then allowed to cool, resulting in an epitaxial growth of tin-doped n-type gallium arsenide upon the gallium arsenide substrate member. Growth of the epitaxial layer occurs within a few minutes, after which the excess charge is scraped from the layer and the substrate member and is then treated with a solution of molten tin bromide to facilitate removal of the excess tin and gallium. The tin bromide and excess tin and gallium are removed from the epitaxial surface by treatment with hydrochloric acid. By varying the atom fraction of tin in the liquified solution, the net donor carrier concentration in the resultant epitaxial layer can be readily varied within the range from 1016 to 1018 per cubic centimeter.
14 citations
Authors
Showing all 2160 results
Name | H-index | Papers | Citations |
---|---|---|---|
Richard R. Ernst | 96 | 352 | 53100 |
Fred E. Regnier | 88 | 412 | 25169 |
Norbert Schuff | 88 | 280 | 25442 |
James S. Hyde | 79 | 412 | 35755 |
Carl Djerassi | 77 | 1523 | 37630 |
Ray Freeman | 73 | 269 | 22872 |
Robert Kaptein | 72 | 436 | 24275 |
Minghwei Hong | 58 | 515 | 14309 |
Jesse L. Beauchamp | 55 | 275 | 10971 |
Herbert Kroemer | 52 | 237 | 9936 |
Hans J. Jakobsen | 49 | 274 | 8401 |
James N. Eckstein | 42 | 168 | 6634 |
Ivan Bozovic | 31 | 128 | 5060 |
John Glushka | 31 | 76 | 3004 |
Gary Virshup | 24 | 113 | 2374 |