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Institution

Varian Associates

About: Varian Associates is a based out in . It is known for research contribution in the topics: Beam (structure) & Amplifier. The organization has 2160 authors who have published 2591 publications receiving 46002 citations.
Topics: Beam (structure), Amplifier, Wafer, Cathode, Resonance


Papers
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Patent
09 Oct 1996
TL;DR: In this article, a method of detecting ions of a single ion species that have been selectively stored in a quadrupole ion trap mass spectrometer is disclosed, which allows ejection of all of the ions in a time period which is nearly twenty times faster than the prior art resonance ejection scanning technique, and without the artifacts in the signal current caused by frequency beating.
Abstract: A method of detecting ions of a single ion species that have been selectively stored in a quadrupole ion trap mass spectrometer is disclosed. After the selected ion species is isolated the trapping field in rapidly changed to cause ions to leave the ion trap in the axial direction where they are detected using a conventional detector. Preferably, a dipole pulse is applied to the ion trap simultaneously with the reduction of the trapping field, such that all of the ions are caused to leave the trap in a single direction, doubling the ion current over prior art methods. The method of the invention allows ejection of all of the ions in a time period which is nearly twenty times faster than the prior art resonance ejection scanning technique, and without the artifacts in the signal current caused by frequency beating.

14 citations

Journal ArticleDOI
M.C. Leifer1
TL;DR: In this article, the authors describe the construction and performance of short solenoidal NMR coils having enhanced usable volume by allowing the RF magnetic field B 1 on the axis of a standard solenoid to vary within prescribed limits along the coil axis.

14 citations

Patent
02 Aug 1968
TL;DR: In this paper, a charge consisting of gallium, gallium arsenide, and tin was heated to produce a liquid molten solution with the atom fraction of tin being below 80 percent in the solution.
Abstract: A charge consisting of gallium, gallium arsenide, and tin was heated to produce a liquid molten solution of gallium, arsenic, and tin with the atom fraction of tin being below 80 percent in the solution. The charge and a gallium arsenide substance are preferably heated in a refractory boat contained within a hydrogen furnace tube, such boat being tilted at an angle such that the substrate wafer is above the liquid level of the solution. The boat is then tipped to cover the heated surface of the gallium arsenide substrate member with the liquified charge solution. The furnace is then allowed to cool, resulting in an epitaxial growth of tin-doped n-type gallium arsenide upon the gallium arsenide substrate member. Growth of the epitaxial layer occurs within a few minutes, after which the excess charge is scraped from the layer and the substrate member and is then treated with a solution of molten tin bromide to facilitate removal of the excess tin and gallium. The tin bromide and excess tin and gallium are removed from the epitaxial surface by treatment with hydrochloric acid. By varying the atom fraction of tin in the liquified solution, the net donor carrier concentration in the resultant epitaxial layer can be readily varied within the range from 1016 to 1018 per cubic centimeter.

14 citations

Patent
13 Jun 1956

14 citations


Authors

Showing all 2160 results

NameH-indexPapersCitations
Richard R. Ernst9635253100
Fred E. Regnier8841225169
Norbert Schuff8828025442
James S. Hyde7941235755
Carl Djerassi77152337630
Ray Freeman7326922872
Robert Kaptein7243624275
Minghwei Hong5851514309
Jesse L. Beauchamp5527510971
Herbert Kroemer522379936
Hans J. Jakobsen492748401
James N. Eckstein421686634
Ivan Bozovic311285060
John Glushka31763004
Gary Virshup241132374
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20171
20161
20122
20111
20104
20093