Institution
Varian Associates
About: Varian Associates is a based out in . It is known for research contribution in the topics: Beam (structure) & Amplifier. The organization has 2160 authors who have published 2591 publications receiving 46002 citations.
Topics: Beam (structure), Amplifier, Wafer, Cathode, Resonance
Papers published on a yearly basis
Papers
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07 Nov 1988TL;DR: In this paper, a load chamber of a load lock is provided with a vertical air curtain which isolates the load chamber from the general clean room environment, and horizontal air flows are captured by the air curtain and recirculated to filters (26b,28b).
Abstract: A load chamber (6) of a load lock is provided with a vertical air curtain which isolates the load chamber (6) from the general clean room environment. Horizontal air flows generated in the load chamber (6) bathe wafers (W) held horizontally in the chamber with filtered air. These horizontal air flows are captured by the air curtain and recirculated to filters (26b,28b) which provide horizontal and vertical air flows in the load chamber (6). If desired, the vertical and horizontal flows may be driven by the air supply mechanism of the clean room itself.
57 citations
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TL;DR: In this paper, the operation of a millimeter-wave harmonic gyrotron is described in which the interaction is between large-orbit axis-encircling electrons and cylindrical cavity TEnll modes.
Abstract: The operation of a millimeter-wave harmonic gyrotron is described in which the interaction is between large-orbit axis-encircling electrons and cylindrical cavity TEnll modes. Efficiencies up to 15% have been measured for moderate harmonic interactions and multi-kW power levels have been attained at the tenth harmonic of the cyclotron frequency. The concept allows the magnetic field of the gyrotron to be reduced by an order of magnitude, thereby making a submillimeter-wave gyrotron feasible.
57 citations
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10 Dec 1990TL;DR: In this paper, a dual track substrate handling and processing system is presented, which includes an entrance load lock station (L1), an exit load lock stations (L2) and a plurality of substrate processing stations (S1-S6), all positioned above a transfer vacuum chamber.
Abstract: A dual track substrate handling and processing system (1) includes an entrance load lock station (L1), an exit load lock station (L2) and a plurality of substrate processing stations (S1-S6), all positioned above a transfer vacuum chamber (30). The load lock station and each processing station are configured to hold two vertically oriented workpieces (w). A transport system conveys workpieces, two at a time, from parallel input cassettes (C1, C2) to the entrance load lock station (L1). The transport system includes a transport assembly that simultaneously advances two workpieces from each station to the next station; thus workpieces are processed two at a time in the same environment in each processing station and system throughput is correspondingly increased.
56 citations
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23 Dec 1977TL;DR: In this article, a thermoelectric device responsive to temperature sensing means causing heating or cooling of the cell block as necessary to provide thermal equilibration at the selected temperature, which can be maintained stable within 0.1°C.
Abstract: This thermostatable flow cell for fluorescence measurements enables rapid thermal equilibration and precise temperature control. For a flow cell volume of less than 20 microliters, a selected temperature in the range up to 20° C. above ambient can be attained within five seconds, and this selected temperature can be maintained stable within 0.1° C. The cell comprises a cylindrical cavity whose walls include a metallic portion for heat conduction and a transparent window portion for light acceptance and fluorescence observation. The metallic portion of the cell is formed from a cell block to which a temperature sensing means is affixed. The window portion is affixed to the cell block by an inert bonding material. A thermoelectric device responsive to the temperature sensing means causing heating or cooling of the cell block as necessary to provide thermal equilibration at the selected temperature.
56 citations
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10 Jun 1985TL;DR: In this paper, a platen is used to define a thermal transfer region between a semiconductor wafer and a heat sink or source in a vacuum processing chamber, where gas at a predetermined pressure, typically 0.5 to 100 Torr, is trapped in the thermal energy between the workpiece and the platen.
Abstract: Apparatus for providing thermal transfer between a semiconductor wafer and a heat sink or source in a vacuum processing chamber includes a platen against which the wafer is sealed to define a thermal transfer region therebetween. The platen includes a passage for gas flow between the chamber and the thermal transfer region. The apparatus further includes a valve for controllably opening and closing the passage and a controller for closing the valve when the pressure in the chamber reaches a predetermined value. Gas at the predetermined pressure, typically 0.5 to 100 Torr, is trapped in the thermal transfer region and conducts thermal energy between the workpiece and the platen. In a preferred embodiment, a plurality of platens are positioned on a rotating disc in an ion implantation system and a centrifugally operated valve is utilized to close the passage.
56 citations
Authors
Showing all 2160 results
Name | H-index | Papers | Citations |
---|---|---|---|
Richard R. Ernst | 96 | 352 | 53100 |
Fred E. Regnier | 88 | 412 | 25169 |
Norbert Schuff | 88 | 280 | 25442 |
James S. Hyde | 79 | 412 | 35755 |
Carl Djerassi | 77 | 1523 | 37630 |
Ray Freeman | 73 | 269 | 22872 |
Robert Kaptein | 72 | 436 | 24275 |
Minghwei Hong | 58 | 515 | 14309 |
Jesse L. Beauchamp | 55 | 275 | 10971 |
Herbert Kroemer | 52 | 237 | 9936 |
Hans J. Jakobsen | 49 | 274 | 8401 |
James N. Eckstein | 42 | 168 | 6634 |
Ivan Bozovic | 31 | 128 | 5060 |
John Glushka | 31 | 76 | 3004 |
Gary Virshup | 24 | 113 | 2374 |