Varian Associates

About: Varian Associates is a based out in . It is known for research contribution in the topics: Beam (structure) & Amplifier. The organization has 2160 authors who have published 2591 publications receiving 46002 citations.

Silicon nitride film and method of deposition

Abstract: A dense film of silicon nitride is deposited by a plasma discharge in a vapor of azidotrimethylsilane (AZS) (CH 3 ) 3 SiN 3 . AZS is less reactive and easier to handle than the previously used silane SiH 4 . The resulting film is more stable chemically than the silicon nitride produced by other processes. It is useful for protective and anti-reflective coatings, for insulating, and for masking, particularly on semiconductive devices.

Deformable chuck driven by piezoelectric means

Abstract: A deformable vacuum pin chuck includes a thin silicon chuck for supporting a semiconductor wafer during lithographic processing and a number of piezoelectric transducers for selectively deforming the chuck. Chuck deformation caused by application of electric potentials to selected transducers may be used to correct flatness deviations in the wafer and, thereby, a desired degree of flatness of the semiconductor wafer may be obtained.

High vacuum gate valve

Abstract: Gate valve having a closure member mounted on a swinging arm pivotally mounted for movement transversely of the axis of the valve openings. A wedge member carried by the arm drives the closure member in a direction parallel to the axis of the openings when moved longitudinally of the arm. An actuator pivots a cam which bears against the wedge member to swing the arm to a predetermined position in which the closure member is aligned with the openings and thereafter to move the cam to drive the closure member axially and seal one of the openings. Resilient members urge the closure member toward its retracted position and prevent the wedge member from moving forward until the arm reaches the predetermined position.

Bean scanning and method of use for ion implantation

Abstract: In an ion implantation system, departure from uniform ion dosage of a planar workpiece is first compensated by modulating the scan rate of at least one coordinate of scan deflection in accordance with a non-linear waveform. The non-linear waveform is digitally synthesized from a plurality of contiguous linear segments, such segments having equal projection on the time axis. The pattern of two-dimensional scanning is then configured to correspond to an astable Lissajous figure. When the trace of such Lissajous figure returns to the initial origin of the pattern, the origin is then displaced by a fraction 1/n of the interval between parallel traces of the basic Lissajous pattern and the displaced Lissajous pattern is executed and again displaced n times until the interval has been traversed. The number n is chosen with reference to scan amplitude and the lateral extension of the beam at the workpiece; a sufficient noise component is tolerated in the deflection system to dither the beam about the average scan trace in order to remove small pattern in homogeneities.