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Institution

Varian Associates

About: Varian Associates is a based out in . It is known for research contribution in the topics: Beam (structure) & Wafer. The organization has 2160 authors who have published 2591 publications receiving 46002 citations.
Topics: Beam (structure), Wafer, Amplifier, Cathode, Resonance


Papers
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Journal ArticleDOI
TL;DR: Raman spectra of SrRuO films grown epitaxially on LaAlO substrate by a pulsed laser deposition showed redistribution of intensity at the magnetic phase transition suggesting that multimagnon processes may contribute to the continuum.
Abstract: Raman spectra of ${\mathrm{SrRuO}}_{3}$ films grown epitaxially on ${\mathrm{LaAlO}}_{3}$ substrate by a pulsed laser deposition have been measured Phonon spectra showed an anomalous temperature dependence in the range of the magnetic phase transition indicating strong spin-lattice interaction No sharp magnon lines were observed, but the broad continuum spectrum showed redistribution of intensity at the magnetic phase transition suggesting that multimagnon processes may contribute to the continuum

41 citations

Patent
12 Aug 1974
TL;DR: An epitaxial layer of a quaternary III-V alloy of Ga, In, As, and P has its constituents proportioned for lattice matching to a substrate having a lattice constant falling within the range of 5.45 to 6.05 A.
Abstract: An epitaxial layer of a quaternary III-V alloy of Ga, In, As, and P has its constituents proportioned for lattice matching to a substrate having a lattice constant falling within the range of 5.45 to 6.05 A. In addition, the constituents of the alloy are proportioned to provide a selected bandgap energy falling within the range of 2.23 to 0.35 electron volts; this corresponds to wavelengths of 0.55 to 3.5 microns. Near perfect lattice matched heterojunctions are provided between the epitaxial layer and the lattice matched substrate; these are useful for providing improved photocathodes and lasers, particularly in the infrared range of wavelengths between 0.8 and 2.0 microns.

41 citations

Patent
29 Mar 1985
TL;DR: In this article, the side cavity resonant frequency is adjusted so it differs from the electromagnetic wave frequency, which causes a change in the normal fixed phase shift of the main cavities adjacent the one side cavity.
Abstract: A linear accelerator includes cascaded standing wave main cavities with approximately the same resonant frequency and plural side cavities. A charged particle beam travels longitudinally through the main cavities. An electromagnetic wave excites the cavities with a frequency that is approximately the same as the resonant frequency of the main cavities. There is normally a fixed electromagnetic energy phase shift in adjacent main cavities. The resonant frequency of at least one side cavity is adjusted so it differs from the electromagnetic wave frequency. The detuned side cavity resonant frequency causes: (a) a change in the normal fixed phase shift of the main cavities adjacent the one side cavity and (b) a decrease in electric field strength in cavities electromagnetically downstream of the one side cavity relative to the electric field strength in cavities electromagnetically upstream of the one side cavity. In different embodiments, the electromagnetic wave is injected into a cavity where the particle beam is upstream and downstream of the one side cavity, respectively.

40 citations

Patent
17 Aug 1970
TL;DR: An X-ray tube with a metal window and having increased power loading capabilities without undesirable overheating of the window, this being achieved by the use of a magnet which is arranged so that magnetic field lines pass over the window surface to reduce bombardment of the windows with secondary or back-scattered electrons from the anode.
Abstract: An X-ray tube with a metal window and having increased power loading capabilities without undesirable overheating of the window, this being achieved by the use of a magnet which is arranged so that magnetic field lines pass over the window surface to reduce bombardment of the window with secondary or back-scattered electrons from the anode.

40 citations

Patent
29 May 1992
TL;DR: In this paper, a method for isolating an ion in a QIT was proposed, employing values from a mass axis calibration chart to establish the maximum DAC value to scan to in order to scan out m(p)-1 and less during ramp up of RF trapping field while applying a specifically selected fixed supplemental frequency applied during said calibration.
Abstract: A method for isolating an ion in a QIT (1) employing values from a mass axis calibration chart to establish the maximum DAC value to scan to in order to scan out m(p)-1 and less during ramp up of RF trapping field while applying a specifically selected fixed supplemental frequency applied during said calibration; and employing values from the calibration curve to establish the DAC value to scan out m(p)+1 and greater during ramping down of RF trapping field, while applying a previously determined fixed broadband spectrum to the QIT end caps.

40 citations


Authors

Showing all 2160 results

NameH-indexPapersCitations
Richard R. Ernst9635253100
Fred E. Regnier8841225169
Norbert Schuff8828025442
James S. Hyde7941235755
Carl Djerassi77152337630
Ray Freeman7326922872
Robert Kaptein7243624275
Minghwei Hong5851514309
Jesse L. Beauchamp5527510971
Herbert Kroemer522379936
Hans J. Jakobsen492748401
James N. Eckstein421686634
Ivan Bozovic311285060
John Glushka31763004
Gary Virshup241132374
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20171
20161
20122
20111
20104
20093