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Institution

Varian Associates

About: Varian Associates is a based out in . It is known for research contribution in the topics: Beam (structure) & Amplifier. The organization has 2160 authors who have published 2591 publications receiving 46002 citations.
Topics: Beam (structure), Amplifier, Wafer, Cathode, Resonance


Papers
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Patent
21 Jan 1983
TL;DR: In this article, a heater assembly for annealing a semiconductor wafer in a vacuum chamber includes a blackbody source having a constant planar energy flux charactertistic and a wafer support for supporting the wafer adjacent to, but not spaced apart from, the source in planar parallel alignment therewith.
Abstract: A heater assembly for annealing a semiconductor wafer in a vacuum chamber includes a blackbody source having a constant planar energy flux charactertistic and a wafer support for supporting the wafer adjacent to, but not spaced apart from, the source in planar parallel alignment therewith. The heater assembly further includes radiation shields and a housing providing support for the source, the wafer support and the radiation shields in fixed relationship. The housing includes a heat sink for removal of thermal energy and a slot for insertion and removal of the wafer. The heater assembly confines thermal energy and reduces input energy requirements. In addition, the requirement for a movable shutter is eliminated.

35 citations

Patent
Peter J. Gaczi1
27 Mar 1987
TL;DR: In this paper, a process for low pressure chemical vapor deposition (LPCVD) of metal silicide, especially molybdenum silicide on a substrate at a low temperature is described.
Abstract: The invention relates to a process for the low pressure chemical vapor deposition (LPCVD) of metal silicide, especially molybdenum silicide, on a substrate at a low temperature. The walls of a LPCVD reactor which contains a heated pedestal for holding a substrate are cooled and the pedestal is heated so the substrate temperature reaches a desired level, depending on the metal silicide to be deposited. A metal halide and a silane or disilane are fed separately into the deposition chamber and mixed behind a small baffle plate at the entrance. The metal silicide is deposited on the substrate surface. It is preferred that the substrate be pre-treated with H₂ plasma before deposition.

35 citations

Journal ArticleDOI
John C Helmer1
TL;DR: In this article, the chemical shift in electron binding energy, magnetic splitting of electron shells, and structures in the valence band were examined for chromium in the 3 + and 6 + oxidation states.

35 citations

Journal ArticleDOI
Tom Alfredson1, Terry Sheehan1, Tom Lenert1, Steve Aamodt1, Laura Correia1 
TL;DR: A format for spectral data interpretation employing an absorbance-weighted mean wavelength of a spectrum, labeled the purity parameterTM (Varian), was applied to spectra acquired with high-performance liquid chromatography and a UV photodiode-array detector.

35 citations

Journal ArticleDOI
TL;DR: In this paper, the existence of neutral atoms with sufficient energy to cause secondary emission of electrons was demonstrated with an rf-induced gas discharge, and it was shown that these neutrals are produced by ion neutralization and reflection at the target electrode surface.
Abstract: Experiments performed with an rf-induced gas discharge demonstrate the existence of neutral atoms with sufficient energy to cause secondary emission of electrons. Evidence is presented that these energetic neutrals are produced by ion neutralization and reflection at the target electrode surface.

35 citations


Authors

Showing all 2160 results

NameH-indexPapersCitations
Richard R. Ernst9635253100
Fred E. Regnier8841225169
Norbert Schuff8828025442
James S. Hyde7941235755
Carl Djerassi77152337630
Ray Freeman7326922872
Robert Kaptein7243624275
Minghwei Hong5851514309
Jesse L. Beauchamp5527510971
Herbert Kroemer522379936
Hans J. Jakobsen492748401
James N. Eckstein421686634
Ivan Bozovic311285060
John Glushka31763004
Gary Virshup241132374
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20171
20161
20122
20111
20104
20093