scispace - formally typeset
Search or ask a question
Institution

Varian Associates

About: Varian Associates is a based out in . It is known for research contribution in the topics: Beam (structure) & Amplifier. The organization has 2160 authors who have published 2591 publications receiving 46002 citations.
Topics: Beam (structure), Amplifier, Wafer, Cathode, Resonance


Papers
More filters
Patent
07 Sep 1989
TL;DR: In this paper, a broadband interconnection between a microstrip and a coplanar waveguide is provided without use of via holes by using anisotropic etching to form a sloped surface between connection points.
Abstract: A broadband interconnection between a microstrip and a coplanar waveguide is provided without use of via holes by using anisotropic etching to form a sloped surface between connection points. The sloped surface is then metallized to provide the interconnection.

32 citations

Journal ArticleDOI
TL;DR: In this paper, various aspects of the organometallic VPE growth of GaAs and AlGaAs are discussed, including basic growth parameters, thickness and compositional uniformity, and doping characteristics.

32 citations

Journal ArticleDOI
R.A. Powell1, R. Chow1, C. Thridandam1, R.T. Fulks2, I.A. Blech2, J.-D.T. Pan2 
TL;DR: Titanium silicide thin films, sputter deposited from a composite silicide target, have been rapidly sintered in ∼10 s to produce extremely uniform highly conductive layers (≲ Ω/sq +mn; 1 percent over a 4-in wafer) with film stress comparable to furnace-annealed films as discussed by the authors.
Abstract: Titanium silicide thin films, sputter deposited from a composite silicide target, have been rapidly sintered in ∼10 s to produce extremely uniform highly conductive layers (≲ Ω/sq \plusmn; 1 percent over a 4-in wafer) with film stress comparable to furnace-annealed films. Such films are suitable for VLSI applications. In addition, silicide formation and activation of ion-implanted species in adjacent Si regions can be accomplished in the same rapid processing step without significant dopant redistribution.

32 citations

Patent
19 Sep 1983
TL;DR: In this paper, an x-y table, a stage assembly movable along the z-axis for holding the wafer, coupled with a plurality of fluid-containing bellows coupled between the table and the stage assembly, and a hydraulic controller operated by a linear stepper motor for varying the fluid volume in each of the bellows in response to an actuator control signal.
Abstract: Apparatus for positioning a semiconductor wafer with respect to a localized vacuum envelope so as to maintain a prescribed gap between the tip of the vacuum envelope and the wafer includes an x-y table, a stage assembly movable along the z-axis for holding the wafer and a z-axis actuator assembly. The z-axis actuator assembly includes a plurality of fluid-containing bellows coupled between the x-y table and the stage assembly and a hydraulic controller operated by a linear stepper motor for varying the fluid volume in each of the bellows in response to an actuator control signal so as to move the stage assembly along the z-axis. The z-axis actuator assembly can further include a flexible disk positioned in the plane of x-y movement and coupled between the x-y table and the stage assembly for preventing lateral and rotational movement of the stage assembly relative to the x-y table. The positioning apparatus is suitable for use in an electron beam lithography system.

32 citations

Journal ArticleDOI
C. R. Lewis1, C. W. Ford1, W. T. Dietze1, J. G. Werthen1, M.J. Ludowise1 
TL;DR: In this article, a double mismatch technique was used to grow a monolithic cascade solar cell, where changes of lattice constant occur not only between the substrate and lower cell, but also between the lower and upper cells.

31 citations


Authors

Showing all 2160 results

NameH-indexPapersCitations
Richard R. Ernst9635253100
Fred E. Regnier8841225169
Norbert Schuff8828025442
James S. Hyde7941235755
Carl Djerassi77152337630
Ray Freeman7326922872
Robert Kaptein7243624275
Minghwei Hong5851514309
Jesse L. Beauchamp5527510971
Herbert Kroemer522379936
Hans J. Jakobsen492748401
James N. Eckstein421686634
Ivan Bozovic311285060
John Glushka31763004
Gary Virshup241132374
Network Information
Related Institutions (5)
Lawrence Livermore National Laboratory
48.1K papers, 1.9M citations

78% related

Bell Labs
59.8K papers, 3.1M citations

78% related

IBM
253.9K papers, 7.4M citations

78% related

Samsung
163.6K papers, 2M citations

77% related

Argonne National Laboratory
64.3K papers, 2.4M citations

77% related

Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20171
20161
20122
20111
20104
20093