Institution
Varian Associates
About: Varian Associates is a based out in . It is known for research contribution in the topics: Beam (structure) & Amplifier. The organization has 2160 authors who have published 2591 publications receiving 46002 citations.
Topics: Beam (structure), Amplifier, Wafer, Cathode, Resonance
Papers published on a yearly basis
Papers
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TL;DR: The kinetics of reduction and oxidation of this cytochrome have been correlated with oxygen uptake and steroid hydroxylation, and electron paramagnetic resonance studies of aerobic mitochondria show signals ascribed to mitochondrial cy tochrome P-450 at g values 2.42 and 2.26 which can be intensified by 11-deoxycortisol.
31 citations
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18 Feb 1982TL;DR: In this article, a triangular waveform, including alternating positive and negative ramp portions of constant slope and controllable time durations, is applied to a horizontal deflection system and produces horizontal scanning of the beam.
Abstract: Method of and apparatus for scanning a charged particle beam over a semiconductor wafer in a prescribed pattern. A triangular waveform, including alternating positive and negative ramp portions of constant slope and controllable time durations, is applied to a horizontal deflection system and produces horizontal scanning of the beam. The time durations of the ramp portions determine the length of the horizontal scan lines and are controlled according to a predetermined sequence so as to provide the prescribed pattern. The triangular waveform is provided by an integrator which receives a square wave from a frequency source of controllable frequency. The predetermined sequence is stored in a read only memory which controls the frequency of the frequency source. At the completion of each ramp portion, a voltage applied to a vertical deflection system is incremented so as to step the beam vertically up or down.
31 citations
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01 May 1995
TL;DR: Fiber strengths are reasonable for many short length applications, but improved processing will lead to stronger fibers for long length applications.
Abstract: We have fabricated long lengths of low loss sulphide and telluride glass fibers for the 1 - 6 and 3 - 12 micrometers regions, respectively. Minimum losses for core/clad fibers are approximately 0.6 and 0.7 dB/m, respectively, while core-only fibers have exhibited losses of about 0.1 dB/m. The measurements have been performed on long lengths, typically 7 - 50 meters. Fiber strengths are reasonable for many short length applications, but improved processing will lead to stronger fibers for long length applications. These fibers are candidates for chemical sensors and for IR laser power delivery.
31 citations
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24 Apr 1994TL;DR: This paper describes some of the issues surrounding a field testing program, and gives suggestions about how such an undertaking can be accomplished under strict financial, resource and schedule limitations.
Abstract: Usability testing is not always best accomplished within the confines of a specially equipped usability laboratory. Logistics and resource constraints sometimes necessitate taking the testing out on the road. Field testing provides an opportunity to sample from a distributed customer base . . a requirement of significant relevance when competing in a global market. What’s more, usability testing in the field can offer benefits in both marketing and public relations that in-house testing may miss. This paper describes some of the issues surrounding a field testing program, and gives suggestions about how such an undertaking can be accomplished under strict financial, resource and schedule limitations. A case study is presented to help illustrate the planning and evaluation process, and to provide insights into the types of problems such an endeavor is likely to encounter, as well as some valuable lessons learned along the way.
31 citations
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02 Mar 1992TL;DR: In this article, a gallium-arsenide optical power receiver with a pn junction formed over a substrate and buffer layer has a window layer of a first alloy of aluminum gallium arsenide (Al x Ga 1-x As) and a conductive layer of another alloy of aluminium gallium arsenic (Al 1 -x Ga x As).
Abstract: A gallium-arsenide optical power receiver of the type having a pn junction formed over a substrate and buffer layer has a window layer of a first alloy of aluminum gallium arsenide (Al x Ga 1-x As) and a conductive layer of a second alloy of aluminum gallium arsenide (Al 1-x Ga x As). Alternatively, the gallium arsenide optical power receiver has a second window layer of the first alloy of aluminum gallium arsenide disposed on the conductive layer, and a cap layer of gallium arsenide disposed on the second window layer. The sheet resistance of the emitter layer is negated by being in parallel with the low sheet resistance of the conductive layer to minimize the thickness and conductivity of the emitter may therefore be optimized solely for energy conversion efficient.
31 citations
Authors
Showing all 2160 results
Name | H-index | Papers | Citations |
---|---|---|---|
Richard R. Ernst | 96 | 352 | 53100 |
Fred E. Regnier | 88 | 412 | 25169 |
Norbert Schuff | 88 | 280 | 25442 |
James S. Hyde | 79 | 412 | 35755 |
Carl Djerassi | 77 | 1523 | 37630 |
Ray Freeman | 73 | 269 | 22872 |
Robert Kaptein | 72 | 436 | 24275 |
Minghwei Hong | 58 | 515 | 14309 |
Jesse L. Beauchamp | 55 | 275 | 10971 |
Herbert Kroemer | 52 | 237 | 9936 |
Hans J. Jakobsen | 49 | 274 | 8401 |
James N. Eckstein | 42 | 168 | 6634 |
Ivan Bozovic | 31 | 128 | 5060 |
John Glushka | 31 | 76 | 3004 |
Gary Virshup | 24 | 113 | 2374 |