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Institution

Varian Associates

About: Varian Associates is a based out in . It is known for research contribution in the topics: Beam (structure) & Amplifier. The organization has 2160 authors who have published 2591 publications receiving 46002 citations.
Topics: Beam (structure), Amplifier, Wafer, Cathode, Resonance


Papers
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Journal ArticleDOI
TL;DR: The kinetics of reduction and oxidation of this cytochrome have been correlated with oxygen uptake and steroid hydroxylation, and electron paramagnetic resonance studies of aerobic mitochondria show signals ascribed to mitochondrial cy tochrome P-450 at g values 2.42 and 2.26 which can be intensified by 11-deoxycortisol.

31 citations

Patent
18 Feb 1982
TL;DR: In this article, a triangular waveform, including alternating positive and negative ramp portions of constant slope and controllable time durations, is applied to a horizontal deflection system and produces horizontal scanning of the beam.
Abstract: Method of and apparatus for scanning a charged particle beam over a semiconductor wafer in a prescribed pattern. A triangular waveform, including alternating positive and negative ramp portions of constant slope and controllable time durations, is applied to a horizontal deflection system and produces horizontal scanning of the beam. The time durations of the ramp portions determine the length of the horizontal scan lines and are controlled according to a predetermined sequence so as to provide the prescribed pattern. The triangular waveform is provided by an integrator which receives a square wave from a frequency source of controllable frequency. The predetermined sequence is stored in a read only memory which controls the frequency of the frequency source. At the completion of each ramp portion, a voltage applied to a vertical deflection system is incremented so as to step the beam vertically up or down.

31 citations

Proceedings ArticleDOI
01 May 1995
TL;DR: Fiber strengths are reasonable for many short length applications, but improved processing will lead to stronger fibers for long length applications.
Abstract: We have fabricated long lengths of low loss sulphide and telluride glass fibers for the 1 - 6 and 3 - 12 micrometers regions, respectively. Minimum losses for core/clad fibers are approximately 0.6 and 0.7 dB/m, respectively, while core-only fibers have exhibited losses of about 0.1 dB/m. The measurements have been performed on long lengths, typically 7 - 50 meters. Fiber strengths are reasonable for many short length applications, but improved processing will lead to stronger fibers for long length applications. These fibers are candidates for chemical sensors and for IR laser power delivery.

31 citations

Proceedings ArticleDOI
David Rowley1
24 Apr 1994
TL;DR: This paper describes some of the issues surrounding a field testing program, and gives suggestions about how such an undertaking can be accomplished under strict financial, resource and schedule limitations.
Abstract: Usability testing is not always best accomplished within the confines of a specially equipped usability laboratory. Logistics and resource constraints sometimes necessitate taking the testing out on the road. Field testing provides an opportunity to sample from a distributed customer base . . a requirement of significant relevance when competing in a global market. What’s more, usability testing in the field can offer benefits in both marketing and public relations that in-house testing may miss. This paper describes some of the issues surrounding a field testing program, and gives suggestions about how such an undertaking can be accomplished under strict financial, resource and schedule limitations. A case study is presented to help illustrate the planning and evaluation process, and to provide insights into the types of problems such an endeavor is likely to encounter, as well as some valuable lessons learned along the way.

31 citations

Patent
Gary Virshup1
02 Mar 1992
TL;DR: In this article, a gallium-arsenide optical power receiver with a pn junction formed over a substrate and buffer layer has a window layer of a first alloy of aluminum gallium arsenide (Al x Ga 1-x As) and a conductive layer of another alloy of aluminium gallium arsenic (Al 1 -x Ga x As).
Abstract: A gallium-arsenide optical power receiver of the type having a pn junction formed over a substrate and buffer layer has a window layer of a first alloy of aluminum gallium arsenide (Al x Ga 1-x As) and a conductive layer of a second alloy of aluminum gallium arsenide (Al 1-x Ga x As). Alternatively, the gallium arsenide optical power receiver has a second window layer of the first alloy of aluminum gallium arsenide disposed on the conductive layer, and a cap layer of gallium arsenide disposed on the second window layer. The sheet resistance of the emitter layer is negated by being in parallel with the low sheet resistance of the conductive layer to minimize the thickness and conductivity of the emitter may therefore be optimized solely for energy conversion efficient.

31 citations


Authors

Showing all 2160 results

NameH-indexPapersCitations
Richard R. Ernst9635253100
Fred E. Regnier8841225169
Norbert Schuff8828025442
James S. Hyde7941235755
Carl Djerassi77152337630
Ray Freeman7326922872
Robert Kaptein7243624275
Minghwei Hong5851514309
Jesse L. Beauchamp5527510971
Herbert Kroemer522379936
Hans J. Jakobsen492748401
James N. Eckstein421686634
Ivan Bozovic311285060
John Glushka31763004
Gary Virshup241132374
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20171
20161
20122
20111
20104
20093