scispace - formally typeset
Search or ask a question
Institution

Varian Associates

About: Varian Associates is a based out in . It is known for research contribution in the topics: Beam (structure) & Amplifier. The organization has 2160 authors who have published 2591 publications receiving 46002 citations.
Topics: Beam (structure), Amplifier, Wafer, Cathode, Resonance


Papers
More filters
Journal ArticleDOI
TL;DR: Two signals observed in electron paramagnetic resonance spectra of Chlorella pyrenoidosa are described, including a five-line signal that occurs at a low level in the dark, is increased on illumination with green light, and decays slowly on darkening and a single line that decays rapidly ondarkening.

26 citations

Patent
11 Jun 1973
TL;DR: In this paper, a microwave waveguide window is disclosed wherein a dielectric filled window section of waveguide is sealed across a waveguide, such that the window and that of the adjoining sections of the waveguide support approximately the same waveguide transmission modes.
Abstract: A microwave waveguide window is disclosed wherein a dielectric filled window section of waveguide is sealed across a waveguide. The window filled section of waveguide in one embodiment is dimensioned to have approximately the same low frequency cutoff wavelength as that of the adjoining sections of guide, such that the window and that of the adjoining sections of the waveguide support approximately the same waveguide transmission modes. In certain windows of the present invention, a quarter wave matching transformer portion of the dielectric window extends from the window into the adjacent waveguide sections. In other windows of the present invention, one or both adjoining sections of waveguide have a substantially lower height, such as ridged waveguide, than the dielectric filled window section and a short section of transition waveguide is interposed between the window and the adjoining lower height waveguide with the dielectric window member projecting into the transition section of waveguide.

26 citations

Patent
David J. Harra1
12 Nov 1981
TL;DR: In this paper, a method for etching a semiconductor wafer on an RF etch table employs a succession of different biases on an extension member positioned adjacent the periphery of the table.
Abstract: A method for etching a semiconductor wafer on an RF etch table employs a succession of different biases on an extension member positioned adjacent the periphery of the table. The extension member is electrically conductive, but is insulated from the etch table. The extension member is positioned with respect to the periphery of the table in a manner such that the plasma sheath induced above the etch table is continued beyond the periphery of the table, thereby eliminating the focusing of ions on the edges of an item being etched on the table. As different bias voltages are applied to the extension member, different etch profiles are experienced on the semiconductor wafer. The aggregation of etch profiles produces a more uniform overall etch.

26 citations

Patent
14 Oct 1968
TL;DR: In this paper, a nonelectron emissive electrode structure is disclosed together with a method for fabricating the same, which includes a core member which may be made of any one of a number of different metals such as molybdenum, copper, tantalum or tungsten.
Abstract: A nonemissive electrode structure is disclosed together with a method for fabricating same. The nonelectron emissive electrode structure includes a core member which may be made of any one of a number of different metals such as molybdenum, copper, tantalum or tungsten. A nonelectron emissive material is deposited over the core metal. The nonemissive deposited layer may be any one of a number of different materials which will provide electron emission inhibiting characteristics in the presence of surface contamination by barium and/or strontium. Examples of such electron emission inhibiting materials include titanium, chromium, zirconium, or silicon. An outer coating of carbon is formed over the emission inhibiting layer to further enhance the nonelectron emissive characteristics of the electrode. Alternatively, the nonemissive deposited layer and carbon coating may be codeposited into a single covering layer deposited over the core material. The electrode structure is especially suitable as a grid structure in an electron discharge device employing either an oxide coated cathode or a dispenser cathode of the type containing barium and/or strontium.

26 citations

Patent
27 Apr 1981
TL;DR: In this paper, a window assembly for a hollow waveguide of circular cross-section, with improved bandwidth and cooling capability for handling high microwave power transmissions over wide frequency ranges t is disclosed.
Abstract: Broadband High-Power Microwave Window Assembly A window assembly for a hollow waveguide of circular cross-section, with improved bandwidth and cooling capability for handling high microwave power transmissions over wide frequency ranges t is disclosed. A plate or disc of dielectric of refractive index n1 extends sealingly across the waveguide and has two parallel faces which exhibit a pattern of corrugations. One of these faces is in contact with a dielectric fluid of refractive index n2, and apparatus is provided for cooling and circulating the fluid over said one face. Each of the corrugations extends into the fluid a distance proportional to the inverse of the geometric mean of the product of the refractive indices n1, n2. In a preferred embodiment, a second plate is included, separated from the first by a region in which said dielectric fluid is circu-lated, and in which at least both the faces in con-tact with the fluid are corrugated. The corruga-tions not only result in greatly improved matching over a broad band, but also greatly improved fluid flow and surface contact thereof over said one face, for enhanced cooling and thus power handling capa-bility of the window assembly.

26 citations


Authors

Showing all 2160 results

NameH-indexPapersCitations
Richard R. Ernst9635253100
Fred E. Regnier8841225169
Norbert Schuff8828025442
James S. Hyde7941235755
Carl Djerassi77152337630
Ray Freeman7326922872
Robert Kaptein7243624275
Minghwei Hong5851514309
Jesse L. Beauchamp5527510971
Herbert Kroemer522379936
Hans J. Jakobsen492748401
James N. Eckstein421686634
Ivan Bozovic311285060
John Glushka31763004
Gary Virshup241132374
Network Information
Related Institutions (5)
Lawrence Livermore National Laboratory
48.1K papers, 1.9M citations

78% related

Bell Labs
59.8K papers, 3.1M citations

78% related

IBM
253.9K papers, 7.4M citations

78% related

Samsung
163.6K papers, 2M citations

77% related

Argonne National Laboratory
64.3K papers, 2.4M citations

77% related

Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20171
20161
20122
20111
20104
20093