Westinghouse Electric

About: Westinghouse Electric is a company organization based out in Cranberry Township, Pennsylvania, United States. It is known for research contribution in the topics: Brake & Circuit breaker. The organization has 27959 authors who have published 38036 publications receiving 523387 citations.

Crystal chemistry of mixed Bismuth oxides with layer-type structure

Abstract: Several compounds with m= 2, 3, 4, and 5 in the general formula (Me 2 'O 2 ) 2+ (Me m-1 R m O 3m+1 ) 2- were synthesized, a number of them for the first time. They possess a layer-type crystal structure. Bi 3+ may be the only suitable ion for the Me' sites; R may be Ga s+ , Ti 4+ , Nb 5+ , or Ta 5+ . The restrictions on the size of Me ions increases with increasing value of m. Lattice parameter data for the compounds and indexed X-ray powder patterns for m= 5 compounds are presented.

Experience with an inverter-based dynamic voltage restorer

Abstract: The installation of the world's first dynamic voltage restorer (DVR) on a major US utility system to protect a critical customer plant load from power system voltage disturbances ushers in a new era of power quality problem solution on the utility side of the revenue billing meter. The prototype DVR built by Westinghouse for EPRI was installed in August, 1996 on the Duke Power Company (North Carolina) 12.47 kV system at an automated yarn manufacturing and weaving factory where it provides protection from disturbances coming from the utility distribution system that serves the plant. This paper describes the prototype DVR installation and presents early results from the demonstration project.

A new ferroelectric memory device, metal-ferroelectric-semiconductor transistor

Abstract: The ferroelectric field effect has successfully been demonstrated on a bulk semiconductor (silicon) using a thin ferroelectric film of bismuth titanate (Bi 4 Ti 3 O 12 ) deposited onto it by RF sputtering. A new memory device, the metal-ferroelectric-semiconductor transistor (MFST); has been fabricated. This device utilizes the remanent polarization of a ferroeletric thin film to control the surface conductivity of a bulk semiconductor substrate and perform a memory function. The capacitance-voltage characteristics of the metal-ferroelectric-semiconductor structure were employed to study the memory behavior. The details of the study together with a preliminary results on the MFST are presented.

Fatigue Crack Growth During Gross Plasticity and the J-Integral

Abstract: An attempt is made to apply the J-integral concept as an elastic-plastic criterion for fatigue crack growth. Compact tension fracture specimens of A533B steel are subjected to gross cyclic plastic deformations, and fatigue crack growth rates up to 0.01 in./cycle are obtained. The results show correlation with J-integral values estimated from load versus deflection hysteresis loops. Also, agreement is obtained with the extrapolation of linear elastic fatigue crack growth rate data.