Westinghouse Electric

About: Westinghouse Electric is a company organization based out in Cranberry Township, Pennsylvania, United States. It is known for research contribution in the topics: Brake & Signal. The organization has 27959 authors who have published 38036 publications receiving 523387 citations.

Ratio of the Diffusion Coefficient to the Mobility Coefficient for Electrons in He, Ar, N 2 , H 2 , D 2 , CO, and C O 2 at Low Temperatures and Low E p

Abstract: $\frac{D}{\ensuremath{\mu}}$, the ratio of the diffusion coefficient to the mobility coefficient for electrons, has been determined as a function of $\frac{E}{p}$, the ratio of the electric field to pressure, in He, Ar, ${\mathrm{N}}_{2}$, ${\mathrm{H}}_{2}$, ${\mathrm{D}}_{2}$, CO, and C${\mathrm{O}}_{2}$. Special interest is centered on the low-temperature, low-$\frac{E}{p}$ data which are essential for the determination of low-energy elastic and inelastic cross sections. The lowest temperature of operation is either 77\ifmmode^\circ\else\textdegree\fi{}K or the boiling point of the gas being measured, whichever is higher. The lowest $\frac{E}{p}$ value is well within the thermal range where $\frac{D}{\ensuremath{\mu}}=\frac{\mathrm{kT}}{e}$. A careful analysis of the operation of the experimental tube is presented along with a method for removing inconsistencies in the results which arise from a conventional interpretation of the data.

Multi-layer single substrate microwave transmit/receive module

Abstract: A microwave transmit/receive module comprises a single multi-layer substrate having at least two opposed mounting surfaces. The substrate including a plurality of integrated dielectric layers, electrical conductors and thermal conductors selectively interconnected between the layers of the substrate. A microwave signal processing means is mounted on at least one of the mounting surfaces of the substrate for processing microwave radar signals. A control signal processing means is mounted on at least one of the mounting surfaces of the substrate for providing control signals for the microwave signal processing means via selected electrical conductors. A power conditioning means is mounted on at least one of the mounting surfaces of the substrate for providing power to the microwave signal processing means and the control signal processing means via selected electrical conductors. A heat sink interface means coupled to the thermal conductors is mounted on at least one of the mounting surfaces of the substrate in thermal proximity selected portions of the microwave signal processing means, the power conditioning means and the control signal processing means for conducting thermal energy away therefrom via selected thermal conductors. An optical interface interface as well as an integrated coaxial cable carrying power, control and microwave signals for the module.

The Thermal Diffusivity of Ice and Water Between -40 and + 60 ~ C

Abstract: The thermal diffusivity αs of triply-distilled deionised water, and αL of single-crystal ice along the c-axis, have been measured by Angstrom's method. The temperature range covered was −40 to +60° C. The results for water compare well with published data for the thermal conductivity, but for ice there are unexplained discrepancies. The linear relationships αs=(8.43−0.101 T) 10−3 cm2/sec and αL=(1.35+0.002 T) 10−3 cm2/sec where T° C is the temperature, fit the data obtained.

Insulated-gate thin film transistor with low leakage current

Abstract: An insulated-gate thin film transistor is provided with low leakage drain current. A second semiconductor layer makes contact with the source electrode and the semiconductor layer forming the channel of the transistor at least between the source and drain electrodes. The second semiconductor layer is of opposite type conductivity from the channel semiconductor layer and preferably forms a PN heterojunction with the channel semiconductor layer. Alternatively, a metal layer may be used in place of the second semiconductor to form a Schottky-barrier junction with the channel semiconductor layer instead of a PN junction. Preferably, the channel semiconductor layer and the second semiconductor layer or the metal layer are sequentially evaporation deposited through the same deposition mask onto a substrate from evaporant sources spaced substantially different distances from the substrate so that the sequential layers are deposited on first and second overlapping areas of the substrate.

The effect of porosity on the microstructural damping response of 6061 aluminium alloy

Abstract: The paper reports on the results of a systematic study of the effects of micrometre-sized pores on the damping response of 6061 aluminium alloy. Spray atomization and deposition processing was utilized for the present study as a result of its ability to produce a material with a pre-determined amount of non-interconnected, micrometre-sized pores. The amount and distribution of pores present in the material may be systematically altered through variations in the processing parameters by using this synthesis approach. The damping measurements were conducted on cantilever beam specimens by using free vibration decay and resonant vibration techniques. Experimental results showed that the porosity increased with increasing average pore size; the damping capacity, in terms of logarithmic decrement δ, of the as-spray-deposited 6061 Al alloy, increased from 1.8 to 2.9% as the amount of porosity increased from 4 to 10%. Comparisons show that the damping capacity of the as-spray-deposited 6061 Al alloy is higher than those reported by other investigators using the same alloy but with different processing techniques. The loading damping mechanisms are discussed in the light of data from the characterization of microstructure and damping capacity.