Institution
Wrocław University of Technology
Education•Wrocław, Poland•
About: Wrocław University of Technology is a education organization based out in Wrocław, Poland. It is known for research contribution in the topics: Laser & Fuzzy logic. The organization has 13115 authors who have published 31279 publications receiving 338694 citations.
Topics: Laser, Fuzzy logic, Quantum dot, Optical fiber, Photoluminescence
Papers published on a yearly basis
Papers
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TL;DR: In this paper, two main methods for detecting correlations between the size and fractal dimension of small particle aggregates from two-dimensional Transmission Electron Microscopy (TEM) images were investigated.
85 citations
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TL;DR: A group of modified (salen)Cr(III)Cl complexes with bulky benzylic substituents in the 3,3'-position of the salicylidene moiety have been successfully applied for the asymmetric nitroaldol reaction.
Abstract: A group of modified (salen)Cr(III)Cl complexes with bulky benzylic substituents in the 3,3′-position of the salicylidene moiety have been successfully applied for the asymmetric nitroaldol reaction...
85 citations
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TL;DR: Small differences in effects estimates per interquartile range (IQR) of PM1 and PM2.5 imply that PM1 was likely the component of PM2,5 that might have a principal health effect on these lung function parameters.
Abstract: To evaluate lung function responses to short-term indoor PM1 and PM2.5 concentrations, we conducted a panel study of healthy schoolchildren aged 13–14 years. The following lung function parameters FVC, FEV1, PEF, and mid expiratory flows MEF25, MEF50, and MEF75 were measured in 141 schoolchildren of the secondary school in Wroclaw, Poland in years 2009–2010. On days when spirometry tests were conducted, simultaneously, PM1 and PM2.5 samples were collected inside the school premises. Information about differentiating factors for children including smoking parents, sex, living close to busy streets, dust, mold, and pollen allergies were collected by means of questionnaires. To account for repeated measurements, the method of generalized estimating equations (GEE) was used. The GEE models for the entire group of children revealed the adverse effects (p < 0.05) of PM1 and PM2.5. Small differences in effects estimates per interquartile range (IQR) of PM1 and PM2.5 on MEF25 (5.1 and 4.8 %), MEF50 (3.7 and 3.9 %), MEF75 (3.5 and 3.6 %) and FEV1 (1.3 and 1.0 %) imply that PM1 was likely the component of PM2.5 that might have a principal health effect on these lung function parameters. However, the reduction of FVC and PEF per IQR for PM2.5 (2.1 and 5.2 %, respectively) was higher than for PM1 (1.0 and 4.4 %, respectively). Adjustment for potential confounders did not change the unadjusted analysis.
85 citations
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85 citations
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TL;DR: In this article, a review of the recent developments in GaAs-based 1.55mum lasers grown by molecular beam epitaxy (MBE) is presented, including the nitrogen plasma conditions, ion removal from the nitrogen flux, surfactant- mediated growth, the roles of various V-II ratios, the growth temperature, the active region thermal budget, proper annealing, and composition.
Abstract: We review the recent developments in GaAs-based 1.55-mum lasers grown by molecular beam epitaxy (MBE). While materials growth is challenging, the growth window appears to be relatively broad and is described in detail. The key considerations for producing high-quality GalnNAsSb material emitting at 1.55-mum regime are examined, including the nitrogen plasma conditions, ion removal from the nitrogen flux, surfactant- mediated growth, the roles of various V-II ratios, the growth temperature, the active region thermal budget, proper annealing, and composition. We find that emission may be tuned throughout the 1.55-mum communications band without penalty to the optical quality varying only one parameter - the total growth rate. This powerful result is validated by the demonstration of low-threshold edge-emitting lasers throughout the 1.55-mum regime, including threshold current densities as low as 318 A/cm2 at 1.54 mum. Additional characterization by Z-parameter techniques, cavity length studies, and band offset measurements were performed to better understand the temperature stability of device performance. Lasing was extended as far as 1.63 mum under nonoptimized growth conditions. The GaAs-based dilute-nitrides are emerging as a very promising alternative to InP-based materials at 1.55-mum due to their high gain, greater range of achievable band offsets, as well as the availability of lattice-matched AlAs-GaAs materials and native oxide layers for vertical-cavity surface-emitting lasers (VCSELs). Indeed, this effort has enabled the first electrically injected C-band VCSEL on GaAs.
85 citations
Authors
Showing all 13239 results
Name | H-index | Papers | Citations |
---|---|---|---|
Krzysztof Palczewski | 114 | 631 | 46909 |
Claude B. Sirlin | 98 | 475 | 33456 |
Marek Czosnyka | 88 | 747 | 29117 |
Alfred Forchel | 85 | 1358 | 34771 |
Jerzy Leszczynski | 78 | 993 | 27231 |
Kim R. Dunbar | 74 | 470 | 20262 |
Massimo Olivucci | 67 | 292 | 14880 |
Nitesh V. Chawla | 61 | 388 | 41365 |
Edward R. T. Tiekink | 60 | 1967 | 21052 |
Bobby G. Sumpter | 60 | 619 | 23583 |
Wieslaw Krolikowski | 59 | 504 | 12836 |
Pappannan Thiyagarajan | 59 | 245 | 10650 |
Marek Samoc | 58 | 401 | 11171 |
Lutz Mädler | 58 | 232 | 27800 |
Rafał Weron | 58 | 285 | 12058 |