Institution
Wuhan University of Technology
Education•Wuhan, China•
About: Wuhan University of Technology is a education organization based out in Wuhan, China. It is known for research contribution in the topics: Microstructure & Photocatalysis. The organization has 40384 authors who have published 36724 publications receiving 575695 citations. The organization is also known as: WUT.
Topics: Microstructure, Photocatalysis, Ceramic, Adsorption, Sintering
Papers published on a yearly basis
Papers
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TL;DR: In this article, the authors examined the tribological behavior of the piston ring assembly using nanoparticles as nano-lubricant additives, and the results showed a decrease in the friction coefficient, power losses and wear.
270 citations
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TL;DR: The results suggested MMT NS could support and maintain the porous structure, making an open excess for MB molecules, and the increasing proportion of MMTNS in hydrogel beads enhanced the MB removal.
270 citations
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TL;DR: The various propulsion modalities of micro‐/nanorobots ranging from chemical/biochemical reactions to external fields, and to motile microorganisms are summarized and commented in terms of driving forces required by the automotive motion in biological media, biocompatibility, as well as the corresponding advantages and limitations in Terms of biomedical applications.
269 citations
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TL;DR: Interface or dielectric engineering is an important step towards the practical implementation of MoS2 devices with the optimized performance in the back- or dual-gated geometry.
Abstract: Experimental evidence of the optimized interface engineering effects in MoS2 transistors is demonstrated. The MoS2/Y2O3/HfO2 stack offers excellent interface control. Results show that HfO2 layer can be scaled down to 9 nm, yet achieving a near-ideal sub-threshold slope (65 mv/dec) and the highest saturation current (526 μA/μm) of any MoS2 transistor reported to date.
269 citations
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TL;DR: In this paper, melt spinning combined with a plasma-activated sintering (MS-PAS) method is employed for commercial p-type zone-melted (ZM) ingots of Bi_0.5Sb_1.5Te_3.
Abstract: Bismuth telluride based thermoelectric materials have been commercialized for a wide range of applications in power generation and refrigeration. However, the poor machinability and susceptibility to brittle fracturing of commercial ingots often impose significant limitations on the manufacturing process and durability of thermoelectric devices. In this study, melt spinning combined with a plasma-activated sintering (MS-PAS) method is employed for commercial p-type zone-melted (ZM) ingots of Bi_0.5Sb_1.5Te_3. This fast synthesis approach achieves hierarchical structures and in-situ nanoscale precipitates, resulting in the simultaneous improvement of the thermoelectric performance and the mechanical properties. Benefitting from a strong suppression of the lattice thermal conductivity, a peak ZT of 1.22 is achieved at 340 K in MS-PAS synthesized structures, representing about a 40% enhancement over that of ZM ingots. Moreover, MS-PAS specimens with hierarchical structures exhibit superior machinability and mechanical properties with an almost 30% enhancement in their fracture toughness, combined with an eightfold and a factor of six increase in the compressive and flexural strength, respectively. Accompanied by an excellent thermal stability up to 200 °C for the MS-PAS synthesized samples, the MS-PAS technique demonstrates great potential for mass production and large-scale applications of Bi_2Te_3 related thermoelectrics.
269 citations
Authors
Showing all 40691 results
Name | H-index | Papers | Citations |
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Jiaguo Yu | 178 | 730 | 113300 |
Charles M. Lieber | 165 | 521 | 132811 |
Dongyuan Zhao | 160 | 872 | 106451 |
Yu Huang | 136 | 1492 | 89209 |
Han Zhang | 130 | 970 | 58863 |
Chao Zhang | 127 | 3119 | 84711 |
Bo Wang | 119 | 2905 | 84863 |
Jianjun Liu | 112 | 1040 | 71032 |
Hong Wang | 110 | 1633 | 51811 |
Jimmy C. Yu | 108 | 350 | 36736 |
Søren Nielsen | 105 | 806 | 45995 |
Liqiang Mai | 104 | 616 | 39558 |
Bei Cheng | 104 | 260 | 33672 |
Feng Li | 104 | 995 | 60692 |
Qi Li | 102 | 1563 | 46762 |