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Institution

Yonsei University

EducationSeoul, South Korea
About: Yonsei University is a education organization based out in Seoul, South Korea. It is known for research contribution in the topics: Population & Cancer. The organization has 50162 authors who have published 106172 publications receiving 2279044 citations. The organization is also known as: Yonsei.


Papers
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Journal ArticleDOI
15 Oct 1997-Gene
TL;DR: The results suggest that the linear sequence between the promoter and the 5'-proximal region of a gene plays an important role in achieving high-level expression in mammalian cells.

260 citations

Journal ArticleDOI
TL;DR: The compound 1a shows remarkable cytotoxicities against human tumor various cell lines, and is active VRE (vancomycin-resistant enterococci) within MIC range 0.5-8 microg/mL.

260 citations

Journal ArticleDOI
TL;DR: In this paper, a refined version of the optothermal Raman technique was used to measure the thermal transport properties of two transition metal dichalcogenides (TMDCs) in single-layer (1L) and bilayer (2L) forms.
Abstract: Atomically thin materials such as graphene and semiconducting transition metal dichalcogenides (TMDCs) have attracted extensive interest in recent years, motivating investigation into multiple properties. In this work, we demonstrate a refined version of the optothermal Raman technique1,2 to measure the thermal transport properties of two TMDC materials, MoS2 and MoSe2, in single-layer (1L) and bilayer (2L) forms. This new version incorporates two crucial improvements over previous implementations. First, we utilize more direct measurements of the optical absorption of the suspended samples under study and find values ∼40% lower than previously assumed. Second, by comparing the response of fully supported and suspended samples using different laser spot sizes, we are able to independently measure the interfacial thermal conductance to the substrate and the lateral thermal conductivity of the supported and suspended materials. The approach is validated by examining the response of a suspended film illumina...

260 citations

Journal ArticleDOI
TL;DR: In this paper, the evolution in the understanding of point defect behavior from Si-based photovoltaics to thin-film CdTe and Cu(In,Ga)Se2 technologies, through to the latest generation of halide perovskite (CH3NH3PbI3) and kesterite (Cu2ZnSnS4) devices, is reviewed.
Abstract: Control of defect processes in photovoltaic materials is essential for realizing high-efficiency solar cells and related optoelectronic devices. Native defects and extrinsic dopants tune the Fermi level and enable semiconducting p–n junctions; however, fundamental limits to doping exist in many compounds. Optical transitions from defect states can enhance photocurrent generation through sub-bandgap absorption; however, these defect states are also often responsible for carrier trapping and non-radiative recombination events that limit the voltage in operating solar cells. Many classes of materials, including metal oxides, chalcogenides and halides, are being examined for next-generation solar energy applications, and each technology faces distinct challenges that could benefit from point defect engineering. Here, we review the evolution in the understanding of point defect behaviour from Si-based photovoltaics to thin-film CdTe and Cu(In,Ga)Se2 technologies, through to the latest generation of halide perovskite (CH3NH3PbI3) and kesterite (Cu2ZnSnS4) devices. We focus on the chemical bonding that underpins the defect chemistry and the atomistic processes associated with the photophysics of charge-carrier generation, trapping and recombination in solar cells. Finally, we outline general principles to enable defect control in complex semiconducting materials. Point defects have a key role in determining the performance of photovoltaic materials. In this Review, we assess defect processes in a range of photovoltaic materials and outline how point defect engineering could be used to improve the efficiency of solar cells.

260 citations

Journal ArticleDOI
TL;DR: In this article, UFG dual-phase steels with different amounts of vanadium were fabricated by equal channel angular pressing (ECAP) and subsequent intercritical annealing.

260 citations


Authors

Showing all 50632 results

NameH-indexPapersCitations
Younan Xia216943175757
Peer Bork206697245427
Ralph Weissleder1841160142508
Hyun-Chul Kim1764076183227
Gregory Y.H. Lip1693159171742
Yongsun Kim1562588145619
Jongmin Lee1502257134772
James M. Tiedje150688102287
Guanrong Chen141165292218
Kazunori Kataoka13890870412
Herbert Y. Meltzer137114881371
Peter M. Rothwell13477967382
Tae Jeong Kim132142093959
Shih-Chang Lee12878761350
Ming-Hsuan Yang12763575091
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
2023203
2022753
20217,800
20207,310
20196,827
20186,298