About: Zaporizhzhia Institute of Economics and Information Technologies is a(n) education organization based out in Zaporizhia, Ukraine. It is known for research contribution in the topic(s): Nucleation & Critical radius. The organization has 9 authors who have published 7 publication(s) receiving 29 citation(s). The organization is also known as: Zaporozhye Institute of Economics and Information Technologies & Zaporizhia Institute of Economics and Information Technologies.
Abstract: The CoLiTec software for the automated search for small celestial objects of the solar system on a series of CCD frames has been developed within the Ukrainian virtual observatory project. Four comets and more than a thousand asteroids were discovered using the software. It was also used to send approximately 700000 positional CCD measurements to the Minor Planet Center. In this paper, accuracy factors of positional CCD measurements using the CoLiTec software are analyzed according to data from the Minor Planet Center. The comparative analysis of these factors according to the results of the processing of the same frames using CoLiTec and Astrometrica software is also conducted. In the case of low signal to noise ratios, the standard deviation of positional CCD measurements using the Astrometrica software is 30–50% greater than that of the CoLiTec software.
Abstract: The diffusion model of the formation of growth microdefects has been considered as applied to the description of defect formation in heat-treated silicon single crystals. It has been shown that, in the framework of the proposed kinetic model of defect formation, the formation and development of the defect structure during the growth of a crystal and its heat treatment can be considered within a unified context. The mathematical apparatus of the diffusion model can provide a basis for the development of a program package for the analysis and calculation of the formation of growth and postgrowth microdefects in dislocation-free silicon single crystals. It has been demonstrated that the diffusion model of the formation of growth and post-growth microdefects allows one to determine necessary conditions for the growth of a crystal and the regimes of its heat treatment for the preparation of a precisely defined defect structure.
Abstract: The adequacy of the model of high-temperature precipitation in dislocation-free silicon single crystals to the classical theory of nucleation and growth of second-phase particles in solids has been considered. It has been shown that the introduction and consideration of thermal conditions of crystal growth in the initial equations of the classical nucleation theory make it possible to explain the precipitation processes occurring in the high-temperature range and thus extend the theoretical basis of the application of the classical nucleation theory. According to the model of high-temperature precipitation, the smallest critical radius of oxygen and carbon precipitates is observed in the vicinity of the crystallization front. Cooling of the crystal is accompanied by the growth and coalescence of precipitates. During heat treatments, the nucleation of precipitates starts at low temperatures, whereas the growth and coalescence of precipitates occur with an increase in the temperature. It has been assumed that the high-temperature precipitation of impurities can determine the overall kinetics of defect formation in other dislocation-free single crystals of semiconductors and metals.
Abstract: It is shown that the Vlasov model for a solid describes the complexing processes when growing real crystals with allowance for the thermal growth conditions. It makes it possible (along with the classical theory of nucleation and growth of second-phase particles in solids) to calculate the defect crystal structure that was formed during the growth. It is established that the high-temperature impurity precipitation is directly related to the subsequent transformation of the defect structure when manufacturing of silicon devices. A qualitative model of the formation of electric centers is proposed, which directly relates their origin to the initial defect structure of silicon. It is shown that the concepts and principles of the Vlasov physics are absolutely applicable in solid-state physics.