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JournalISSN: 1936-0851

ACS Nano

About: ACS Nano is an academic journal. The journal publishes majorly in the area(s): Graphene & Carbon nanotube. It has an ISSN identifier of 1936-0851. Over the lifetime, 16749 publication(s) have been published receiving 1441533 citation(s). more

Topics: Graphene, Carbon nanotube, Quantum dot more

Journal ArticleDOI: 10.1021/NN1006368
22 Jul 2010-ACS Nano
Abstract: An improved method for the preparation of graphene oxide (GO) is described. Currently, Hummers’ method (KMnO4, NaNO3, H2SO4) is the most common method used for preparing graphene oxide. We have found that excluding the NaNO3, increasing the amount of KMnO4, and performing the reaction in a 9:1 mixture of H2SO4/H3PO4 improves the efficiency of the oxidation process. This improved method provides a greater amount of hydrophilic oxidized graphene material as compared to Hummers’ method or Hummers’ method with additional KMnO4. Moreover, even though the GO produced by our method is more oxidized than that prepared by Hummers’ method, when both are reduced in the same chamber with hydrazine, chemically converted graphene (CCG) produced from this new method is equivalent in its electrical conductivity. In contrast to Hummers’ method, the new method does not generate toxic gas and the temperature is easily controlled. This improved synthesis of GO may be important for large-scale production of GO as well as the ... more

Topics: Graphene oxide paper (60%), Graphene (52%)

8,351 Citations

Open accessJournal ArticleDOI: 10.1021/NN501226Z
Han Liu1, Adam T. Neal1, Zhen Zhu2, Zhe Luo1  +3 moreInstitutions (2)
21 Mar 2014-ACS Nano
Abstract: We introduce the 2D counterpart of layered black phosphorus, which we call phosphorene, as an unexplored p-type semiconducting material. Same as graphene and MoS2, single-layer phosphorene is flexible and can be mechanically exfoliated. We find phosphorene to be stable and, unlike graphene, to have an inherent, direct, and appreciable band gap. Our ab initio calculations indicate that the band gap is direct, depends on the number of layers and the in-layer strain, and is significantly larger than the bulk value of 0.31–0.36 eV. The observed photoluminescence peak of single-layer phosphorene in the visible optical range confirms that the band gap is larger than that of the bulk system. Our transport studies indicate a hole mobility that reflects the structural anisotropy of phosphorene and complements n-type MoS2. At room temperature, our few-layer phosphorene field-effect transistors with 1.0 μm channel length display a high on-current of 194 mA/mm, a high hole field-effect mobility of 286 cm2/V·s, and an... more

Topics: Phosphorene (84%), Band gap (54%), Electron mobility (53%)

4,399 Citations

Journal ArticleDOI: 10.1021/NN400280C
Sheneve Z. Butler1, Shawna M. Hollen1, Linyou Cao1, Yi Cui2  +20 moreInstitutions (11)
26 Mar 2013-ACS Nano
Abstract: Graphene’s success has shown that it is possible to create stable, single and few-atom-thick layers of van der Waals materials, and also that these materials can exhibit fascinating and technologically useful properties. Here we review the state-of-the-art of 2D materials beyond graphene. Initially, we will outline the different chemical classes of 2D materials and discuss the various strategies to prepare single-layer, few-layer, and multilayer assembly materials in solution, on substrates, and on the wafer scale. Additionally, we present an experimental guide for identifying and characterizing single-layer-thick materials, as well as outlining emerging techniques that yield both local and global information. We describe the differences that occur in the electronic structure between the bulk and the single layer and discuss various methods of tuning their electronic properties by manipulating the surface. Finally, we highlight the properties and advantages of single-, few-, and many-layer 2D materials in... more

3,534 Citations

Open accessJournal ArticleDOI: 10.1021/NN1003937
Changgu Lee1, Hugen Yan, Louis E. Brus, Tony F. Heinz1  +2 moreInstitutions (2)
14 Apr 2010-ACS Nano
Abstract: Molybdenum disulfide (MoS2) of single- and few-layer thickness was exfoliated on SiO2/Si substrate and characterized by Raman spectroscopy. The number of S−Mo−S layers of the samples was independently determined by contact-mode atomic force microscopy. Two Raman modes, E12g and A1g, exhibited sensitive thickness dependence, with the frequency of the former decreasing and that of the latter increasing with thickness. The results provide a convenient and reliable means for determining layer thickness with atomic-level precision. The opposite direction of the frequency shifts, which cannot be explained solely by van der Waals interlayer coupling, is attributed to Coulombic interactions and possible stacking-induced changes of the intralayer bonding. This work exemplifies the evolution of structural parameters in layered materials in changing from the three-dimensional to the two-dimensional regime. more

Topics: Raman spectroscopy (55%), van der Waals force (54%), Phonon (51%)

3,533 Citations

Open accessJournal ArticleDOI: 10.1021/NN901850U
15 Feb 2010-ACS Nano
Abstract: Nitrogen-doped graphene (N-graphene) was synthesized by chemical vapor deposition of methane in the presence of ammonia. The resultant N-graphene was demonstrated to act as a metal-free electrode with a much better electrocatalytic activity, long-term operation stability, and tolerance to crossover effect than platinum for oxygen reduction via a four-electron pathway in alkaline fuel cells. To the best of our knowledge, this is the first report on the use of graphene and its derivatives as metal-free catalysts for oxygen reduction. The important role of N-doping to oxygen reduction reaction (ORR) can be applied to various carbon materials for the development of other metal-free efficient ORR catalysts for fuel cell applications, even new catalytic materials for applications beyond fuel cells. more

Topics: Direct-ethanol fuel cell (62%), Electrocatalyst (60%), Catalysis (53%) more

3,360 Citations

No. of papers from the Journal in previous years

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Journal's top 5 most impactful authors

Zhong Lin Wang

240 papers, 28.5K citations

Paul S. Weiss

163 papers, 6.9K citations

James M. Tour

87 papers, 19.2K citations

Jamie H. Warner

55 papers, 2.5K citations

Andre E. Nel

49 papers, 8.3K citations

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