Showing papers in "Applied Physics Letters in 1975"
TL;DR: In this paper, the authors measured the switching speed of two transmission gates in tandem, each having an aperture time of 15 psec, by correlating the response of two transceivers in tandem.
Abstract: Quasimetallic photoconductivity produced by the absorption of picosecond optical pulses in silicon transmission line structures has been used to devise electronic switches and gates which can be turned on and off in a few picoseconds. Electrical signals as large as 100 V can be switched by a few microjoules of optical energy. The switching speed was measured by correlating the response of two transmission gates in tandem, each having an aperture time of 15 psec.
841 citations
TL;DR: In this paper, an MOS transistor with 10−nm silicon dioxide as gate insulator and 10 −nm palladium as gate electrode was fabricated and the threshold voltage of this transistor was found to be a function of the partial pressure of hydrogen in the ambient atmosphere.
Abstract: An MOS transistor in silicon with 10−nm silicon dioxide as gate insulator and 10−nm palladium as gate electrode was fabricated. The threshold voltage of this transistor was found to be a function of the partial pressure of hydrogen in the ambient atmosphere. At a device temperature of 150 °C it was possible to detect 40 ppm hydrogen gas in air with response times less than 2 min.
707 citations
TL;DR: In this article, the authors reported the preparation of a CuInSe2/CdS heterojunction solar cell having a solar power conversion efficiency of 12% measured on a clear day in New Jersey (∼92mW/cm2 solar intensity).
Abstract: We report the preparation of a CuInSe2/CdS heterojunction solar cell having a solar power conversion efficiency of 12% measured on a clear day in New Jersey (∼92‐mW/cm2 solar intensity).
268 citations
TL;DR: In this paper, holograms were recorded and fixed simultaneously in heated (∼160°C) crystals of Fe−doped LiNbO3, with the erase/write asymmetry required for multiple storage of high−diffraction−efficiency holograms.
Abstract: Holograms were recorded and fixed simultaneously in heated (∼160°C) crystals of Fe−doped LiNbO3. With this procedure the crystals have the erase/write asymmetry required for multiple storage of high−diffraction−efficiency holograms. Five hundred fixed holograms, each with more than 2.5% diffraction efficiency, were recorded.
265 citations
TL;DR: In this article, the formation of one-dimensional self-images in planar optical waveguides is described ray optically and demonstrated experimentally and the self images can be erect or inverted, single or multiple, and magnified or demagnified.
Abstract: The formation of one‐dimensional self‐images in planar optical waveguides is described ray optically and is demonstrated experimentally The self‐images can be erect or inverted, single or multiple, and magnified or demagnified Possible applications in integrated optics include a cross over of strip guides, a simple 3‐dB directional coupler, and a filter
229 citations
TL;DR: In this paper, it has been shown that high interface mobility can be achieved by transforming Si atoms at the interface from covalent bonding to metallic bonding and the transformation can be induced by forming metal interstitials in Si.
Abstract: Near‐noble metals react with Si to form a metal‐rich silicide at 100 to 200 °C. Growth of the silicide is selected by the criterion that diffusion of near‐noble metal atoms to the silicide‐silicon interface is needed in order to maintain a high interface mobility. Structure of the metal‐rich silicide facilitates the diffusion. It has been postulated that high interface mobility can be achieved by transforming Si atoms at the interface from covalent bonding to metallic bonding and the transformation can be induced by forming metal interstitials in Si.
215 citations
TL;DR: In this paper, an integrated optical switch/modulator consisting of an active directional coupler with a novel electrode configuration is presented, in titanium-diffused lithium niobate.
Abstract: We report the realization, in titanium‐diffused lithium niobate, of an integrated optical switch/modulator consisting of an active directional coupler with a novel electrode configuration. Efficient switching is observed with 6 V applied.
214 citations
TL;DR: In this paper, a mode-locked cw dye laser has been compressed in time to produce pulses as short as a few tenths of a picosecond, which reveal temporal asymmetry and frequency chirping on a subpicosecond time scale.
Abstract: Picosecond pulses from a mode‐locked cw dye laser have been compressed in time to produce pulses as short as a few tenths of a picosecond Dynamic spectroscopic investigations of the laser pulses reveal temporal asymmetry and frequency chirping on a subpicosecond time scale
205 citations
TL;DR: In this article, two new lasers operating on the 2Σ+1/2→2Σ + 1/2 bands of XeCl (at 308 nm) and KrF (at 249 nm) were described.
Abstract: This letter describes two new lasers operating on the 2Σ+1/2→2Σ+1/2 bands of XeCl (at 308 nm) and KrF (at 249 nm). Pumping was achieved by high‐intensity electron beam excitation of high‐pressure Ar containing small amounts of Xe and Cl2 or Kr and F2. An efficiency of about 0.4% was observed in the initial experiments on KrF, and higher efficiencies appear possible.
204 citations
TL;DR: The beam from an EHD ion source using liquid gallium has been shown to have a brigtness of 0.9×105 A/cm−2 sr−1 at 21 kV and an energy spread of 12 eV at 10μA total current.
Abstract: The beam from an EHD ion source using liquid gallium has been shown to have a brigtness of 0.9×105 A cm−2 sr−1 at 21 kV and an energy spread of 12 eV at 10‐μA total current. The effective source diameter was 0.2 μm as imaged by a 2‐cm‐long Einzel lens with a 0.12‐mm aperture. Cesium was significantly poorer and mercury much poorer than gallium.
191 citations
TL;DR: In this paper, the authors developed a theory that gives the correct time dependence and magnitude of the current for double extraction in amorphous WO3 films containing electrons and mobile cations.
Abstract: Measurements have been made of the current flow in amorphous WO3 films containing electrons and mobile cations. In a configuration in which electrons are extracted at one contact and cations at the other, the current decays as t−3/4 over many decades of time. By using space‐charge current flow ideas, we develop a theory that gives the correct time dependence and magnitude of the current for this double‐extraction phenomenon.
TL;DR: In this article, optically pumped laser oscillation from multilayer heterostructures consisting of alternating layers of GaAs and Al0.2Ga0.8As was reported.
Abstract: We report optically pumped laser oscillation from multilayer heterostructures consisting of alternating layers of GaAs and Al0.2Ga0.8As. Very thin GaAs layers (50−500 A) exhibit one−dimensional bound states above the band gap of bulk GaAs. The laser oscillation occurs at energies which are slightly below the exciton associated with the lowest energy n=1 bound state.
TL;DR: In this article, an e-beam device was excited by an e −beam device over the range 10−3000 Torr Stimulated emission was observed on the transition XeBr*→Xe+Br+hν (2818 nm) Proof of laser emission and mechanistic details are discussed
Abstract: Xenon with 010–4% Br2 was excited by an e‐beam device over the range 10–3000 Torr Stimulated emission was observed on the transition XeBr*→Xe+Br+hν (2818 nm) Proof of laser emission and mechanistic details are discussed
TL;DR: An increase in the ratio of S34/S32 of 3300% over its natural ratio has been obtained by irradiating SF6 in the presence of H2 with an intensely focused CO2 laser as mentioned in this paper.
Abstract: An increase in the ratio of S34/S32 of 3300% over its natural ratio has been obtained by irradiating SF6 in the presence of H2 with an intensely focused CO2 laser The quantities of material separated are on the order of 100 μg
TL;DR: In this paper, the average energy required to create an electron−hole pair in SiO2 has been determined to be approximately 18 eV by considering the energy loss of fast electrons in solids.
Abstract: The average energy W required to create an electron−hole pair in SiO2 has been determined to be approximately 18 eV by considering the energy loss of fast electrons in solids. This energy loss occurs primarily by plasmon production and subsequent decay of the plasmons into electron−hole pairs. It is also demonstrated that recent data on electron−irradiated SiO2 films can be explained remarkably well by a columnar recombination model. The extrapolation to infinite electric field of the columnar model fit to the data yields a value for W which is in excellent agreement with the value obtained from the energy loss calculation.
TL;DR: In this article, a method for spanning the 100−1000−μ portion of the spectrum with continuously tunable coherent radiation is described based upon laser light scattering from the long−wavelength side of the A1−symmetry soft mode in LiNbO3.
Abstract: A method for spanning the 100−1000−μ portion of the spectrum with continuously tunable coherent radiation is described. The approach is based upon laser light scattering from the long−wavelength side of the A1−symmetry soft mode in LiNbO3. In contrast with other techniques, this method uses a single fixed−frequency pump source, requires no magnetic field, provides continuous rather than discrete tuning, can cover most of the 100−1000−μ range, operates at room temperature, and is simple to tune. The experimental data show that tuning was obtained from approximately 150 to 700 μ.
TL;DR: In this article, a method for the determination of the surface recombination velocity by scanning electron microscopy was proposed, which is based on an established relationship between the effective diffusion length of the minority carriers, the penetration depth of the electron beam, and surface recombinations.
Abstract: A method is reported for the determination of the surface recombination velocity by scanning electron microscopy; this method is based on an established relationship between the effective diffusion length of the minority carriers, the penetration depth of the electron beam, and the surface recombination velocity. Values of surface recombination velocity, up to about 2.5×106 cm/sec were determined in n‐type GaAs with a bulk minority‐carrier lifetime of the order of 10−8–10−10 sec; in GaAs, with carrier concentrations exceeding 1018 cm−3, recombination velocity of about 3×106 cm/sec represents a saturation value.
TL;DR: In this paper, a waveguide optical switch and/or modulator device is described that uses a single-mode waveguide version of the Mach•Zehnder interferometer, and a mode selective branching waveguide is used for switching, and modulation can be accomplished without external polarizers in singlemode waveguides.
Abstract: A waveguide optical switch and/or modulator device is described that uses a single‐mode waveguide version of the Mach‐Zehnder interferometer. A mode selective branching waveguide is used for switching, and modulation can be accomplished without external polarizers in single‐mode waveguides. The operation of a 1×2 switch fabricated by diffusion techniques in ZnSe is described.
TL;DR: In this article, a reversible photoinduced change in the intermolecular distance has been observed in a well-annealed As2S3 film using a detailed x−ray diffraction technique.
Abstract: A reversible photoinduced change in the intermolecular distance has been observed in a well−annealed As2S3 film using a detailed x−ray diffraction technique. This phenomenon is strongly related to the reversible optical absorption edge shift (i.e., photodarkening) by successive cycles of band−gap illumination and annealing. A quantitative interpretation is given for both phenomena in connection with the pressure−induced optical absorption edge shift.
TL;DR: In this article, the authors report the fabrication and testing of a GaAs electro-optic directional-coupler (EDC) switch in which the fraction of light coupled from one waveguide channel to the other can be controlled by an applied electric field.
Abstract: We report the fabrication and testing of a GaAs electro‐optic directional‐coupler (EDC) switch in which the fraction of light coupled from one waveguide channel to the other can be controlled by an applied electric field Ninety‐five percent amplitude switching and a maximum extinction ratio of 13 dB have been observed in an EDC switch, having a minimum 3‐dB bandwidth of ≳100 MHz and a drive power per unit bandwidth of <180 μW/MHz
TL;DR: In this paper, a new effect is developed which significantly improves the conversion efficiency of antireflection-coated metaloxide-semiconductor (AMOS) solar cells, which is produced by the addition of an oxide layer to the semiconductor.
Abstract: A new effect is being developed which significantly improves the conversion efficiency of antireflection‐coated metal‐oxide‐semiconductor ‘AMOS’ solar cells. The effect, a marked increase in the open‐circuit voltage, is produced by the addition of an oxide layer to the semiconductor. Cells using gold on n‐type gallium arsenide have been made with efficiencies up to 15% in terrestrial sunlight. All processing steps are amenable to the use of low‐cost polycrystalline films of GaAs in place of the single crystals now used.
TL;DR: In this article, the etch rate on the near {110} planes was shown to be at least 400 times faster than that on the {111} using 44% KOH : H2O at a temperature of 85 °C and below.
Abstract: The etch rate on the {110} is shown to be at least 400 times faster than that on the {111} using 44% KOH : H2O at a temperature of 85 °C and below. A model is presented which attributes essentially all the etching on the near {111} planes to the misorientation ledges. Grooves of 0.6−μm width and 44−μm depth have been produced. Such grooves have been used to make high−value SiO2 capacitors and vertical multijunction solar cells.
TL;DR: In this paper, the Monte Carlo technique has been used to calculate the velocity-field relationship for GaN, including polar optical scattering, acoustic scattering, piezoelectric scattering, and ionized impurity scattering.
Abstract: The Monte Carlo technique has been used to calculate the velocity‐field relationship for GaN The calculation has included polar optical scattering, acoustic scattering, piezoelectric scattering, and ionized impurity scattering The electron mobility has also been evaluated at low fields as a function of impurity concentration
TL;DR: In this article, the authors reported the room temperature operation of an optically integrated double heterostructure (DH) GaAs•AlxGa1•xAs injection laser with a distributed Bragg reflector (DBR), with threshold current densities of 5 kA/cm2.
Abstract: Room‐temperature operation of an optically integrated double heterostructure (DH) GaAs‐AlxGa1‐xAs injection laser with a distributed Bragg reflector (DBR), with threshold current densities of 5 kA/cm2 is reported. The DBR was in the form of a third‐order grating which was ion milled on a passive single heterostructure (SH) waveguide section with the latter taper coupled to the active DH section. The observed half‐power spectral bandwidth was ≲1 A. A highly collimated beam output with a half‐power divergence angle of ≲0.3° was also achieved by coupling the scattered light from the oil‐immersed grating at the Bragg angle with a prism.
TL;DR: In this article, the orientational relaxation times and S1 singlet lifetimes for Rhodamine 6G molecules in various alcohols have been measured using mode-locked laser pulses in a transient induced grating technique.
Abstract: The orientational relaxation times and S1 singlet lifetimes for Rhodamine 6G molecules in various alcohols have been measured using mode‐locked laser pulses in a transient induced grating technique. The transient grating technique can be applied to measure a variety of atomic and molecular excited state phenomena on subnanosecond to picosecond time scales.
TL;DR: In this paper, the authors reported laser action on the xenon monofluoride 2Σ1/2→2Σ 1/2 band at 354 nm using a high-pressure mixture of F2/Xe/Ar with an electron beam.
Abstract: This letter reports laser action on the xenon monofluoride 2Σ1/2→2Σ1/2 band at 354 nm. Lasing on discrete vibrational bands has been achieved by pulse excitation of high‐pressure mixtures of F2/Xe/Ar with an electron beam. XeF is a member of a new class of diatmoic molecules, the noble gas monohalides, which all exhibit similar molecular structure and spectra, and laser action should be attainable on the various bands of other members of this class of molecules. The kinetics and loss mechanisms of these laser candidates are briefly discussed.
TL;DR: In this paper, data from accelerated aging tests on continuously operating stripe-geometry double-heterostructure GaAs was presented and it was concluded that continuous room-temperature operation of these devices as GaAs with power outputs exceeding 1 mW per laser face for times in excess of 100000 h is possible.
Abstract: Data from accelerated aging tests on continuously operating stripe−geometry double−heterostructure GaAs lasers are presented. By extrapolating data obtained in dry−nitrogen ambients at temperatures of 90, 70, and 50 °C, it is concluded that continuous room−temperature operation of these devices as lasers with power outputs exceeding 1 mW per laser face for times in excess of 100000 h is possible.
TL;DR: In this paper, results of charge−centroid measurements on thin-oxide MNOS devices are interpreted with a charge trapping model, leading to values for the nitride trap density, capture cross section, and average trapping distance of 6×1018/cm3, 5×10−13 cm2, and 35 A, respectively.
Abstract: Previous charge−centroid studies of MNOS devices have shown that electrons injected into the insulator structure from the silicon are trapped not solely at the dielectric interface, but can be distributed over nearly the entire nitride thickness. In this paper, results of charge−centroid measurements on thin−oxide MNOS devices are interpreted with a charge trapping model, leading to values for the nitride trap density, capture cross section, and average trapping distance of 6×1018/cm3, 5×10−13 cm2, and 35 A, respectively.
TL;DR: In this paper, an optical Kerr gate is operated at high repetition rates using picosecond pulses from a mode−locked cw laser, and a new mode of gate operation is demonstrated in which incremental transmission is linearly proportional to pump power.
Abstract: An optical Kerr gate is operated at high repetition rates using picosecond pulses from a mode−locked cw laser A new mode of gate operation is demonstrated in which incremental transmission is linearly proportional to pump power Direct temporal measurement of a 21−psec response time of the optical Kerr effect in CS2 is reported
TL;DR: In this article, the first measurement of hole mobility and its temperature dependence in thermally grown SiO2 on Si was reported and found to follow μ≃20 exp(−0.6eV/kT) cm2/V sec.
Abstract: The first measurement of the hole mobility and its temperature dependence in thermally grown SiO2 on Si is reported and found to follow μ≃20 exp(−0.6eV/kT) cm2/V sec. In agreement with previous studies, the energy required to form an electron−hole pair with ionizing radiation is found to be field dependent and at very high fields is in the range of 18 eV/electron−hole pair, and is nearly temperature independent from 77 to 370 °K.