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Showing papers in "Applied Physics Letters in 2000"


Journal ArticleDOI
TL;DR: In this paper, in situ transmission electron microscopy studies provided information regarding composite deformation mechanisms and interfacial bonding between the multi-wall carbon nanotubes and polymer matrix, indicating significant load transfer across the nanotube-matrix interface.
Abstract: Multiwall carbon nanotubes have been dispersed homogeneously throughout polystyrene matrices by a simple solution-evaporation method without destroying the integrity of the nanotubes. Tensile tests on composite films show that 1 wt % nanotube additions result in 36%–42% and ∼25% increases in elastic modulus and break stress, respectively, indicating significant load transfer across the nanotube-matrix interface. In situ transmission electron microscopy studies provided information regarding composite deformation mechanisms and interfacial bonding between the multiwall nanotubes and polymer matrix.

2,431 citations


Journal ArticleDOI
TL;DR: In this article, a microactuator for rapid manipulation of discrete microdroplets is presented, which is accomplished by direct electrical control of the surface tension through two sets of opposing planar electrodes fabricated on glass.
Abstract: A microactuator for rapid manipulation of discrete microdroplets is presented. Microactuation is accomplished by direct electrical control of the surface tension through two sets of opposing planar electrodes fabricated on glass. A prototype device consisting of a linear array of seven electrodes at 1.5 mm pitch was fabricated and tested. Droplets (0.7–1.0 μl) of 100 mM KCl solution were successfully transferred between adjacent electrodes at voltages of 40–80 V. Repeatable transport of droplets at electrode switching rates of up to 20 Hz and average velocities of 30 mm/s have been demonstrated. This speed represents a nearly 100-fold increase over previously demonstrated electrical methods for the transport of droplets on solid surfaces.

1,471 citations


Journal ArticleDOI
TL;DR: In this article, it was shown that positive or negative voltage pulses can switch the resistance of the oxide films between a low- and a high-impedance state in times shorter than 100 ns.
Abstract: Thin oxide films with perovskite or related structures and with transition metal doping show a reproducible switching in the leakage current with a memory effect. Positive or negative voltage pulses can switch the resistance of the oxide films between a low- and a high-impedance state in times shorter than 100 ns. The ratio between these two states is typically about 20 but can exceed six orders of magnitude. Once a low-impedance state has been achieved it persists without a power connection for months, demonstrating the feasibility of nonvolatile memory elements. Even multiple levels can be addressed to store two bits in such a simple capacitor-like structure.

1,201 citations


Journal ArticleDOI
TL;DR: In this paper, an organic hole-injecting film, poly-(3,4-ethylenedioxythiophene) (PEDOT) doped with poly(styrenesulfonate) (PSS), between the ITO and the emissive polymer has been observed.
Abstract: A cause for degradation of polymer light-emitting diodes is the oxidation of the polymer by oxygen diffusing out of the indium-tin-oxide (ITO) anode. This problem can be solved by the introduction of an organic hole-injecting film, poly-(3,4-ethylenedioxythiophene) (PEDOT) doped with poly(styrenesulfonate) (PSS), between the ITO and the emissive polymer. Indeed, a dramatic improvement of the lifetime and also the luminous efficiency has been observed. However, our Rutherford backscattering (RBS) studies show that the ITO/PEDOT:PSS interface is not stable. In as prepared glass/ITO/PEDOT:PSS samples 0.02 at. % indium was found in the PEDOT:PSS film. Annealing in a nitrogen atmosphere at 100 °C during 2500 h increased the indium concentration to 0.2 at. %. Upon exposure to air much faster degradation of the ITO/PEDOT:PSS interface was observed; after several days in air the amount of indium reached a saturation concentration of 1.2 at. %. The degradation of the interface can be explained by etching of the IT...

1,117 citations


Journal ArticleDOI
TL;DR: In this article, the authors demonstrate high-efficiency organic light-emitting devices employing the green electrophosphorescent molecule, fac tris(2-phenylpyridine)iridium [Ir(ppy)3], doped into various electron-transport layer (ETL) hosts.
Abstract: We demonstrate high-efficiency organic light-emitting devices employing the green electrophosphorescent molecule, fac tris(2-phenylpyridine)iridium [Ir(ppy)3], doped into various electron-transport layer (ETL) hosts. Using 3-phenyl-4-(1′-naphthyl)-5-phenyl-1,2,4-triazole as the host, a maximum external quantum efficiency (ηext) of 15.4±0.2% and a luminous power efficiency of 40±2 Im/W are achieved. We show that very high internal quantum efficiencies (approaching 100%) are achieved for organic phosphors with low photoluminescence efficiencies due to fundamental differences in the relationship between electroluminescence from triplet and singlet excitons. Based on the performance characteristics of single and double heterostructures, we conclude that exciton formation in Ir(ppy)3 occurs within close proximity to the hole-transport layer/ETL:Ir(ppy)3 interface.

1,088 citations


Journal ArticleDOI
TL;DR: In this paper, a simple model accounts quantitatively for the dependence of strain on magnetic field and external stress using as input parameters only measured quantities, and the strain versus field curves exhibit appreciable hysteresis associated with the motion of the twin boundaries.
Abstract: Field-induced strains of 6% are reported in ferromagnetic Ni–Mn–Ga martensites at room temperature. The strains are the result of twin boundary motion driven largely by the Zeeman energy difference across the twin boundary. The strain measured parallel to the applied magnetic field is negative in the sample/field geometry used here. The strain saturates in fields of order 400 kA/m and is blocked by a compressive stress of order 2 MPa applied orthogonal to the magnetic field. The strain versus field curves exhibit appreciable hysteresis associated with the motion of the twin boundaries. A simple model accounts quantitatively for the dependence of strain on magnetic field and external stress using as input parameters only measured quantities.

1,035 citations


Journal ArticleDOI
TL;DR: In this paper, the origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field effect transistors is examined theoretically and experimentally.
Abstract: The origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field effect transistors is examined theoretically and experimentally. Based on an analysis of the electrostatics, surface states are identified as an important source of electrons. The role of the polarization-induced dipole is also clarified. Experimental Hall data for nominally undoped Al0.34Ga0.66N/GaN structures indicate that ∼1.65 eV surface donors are the actual source of the electrons in the 2DEG, which forms only when the barrier thickness exceeds 35 A.

1,015 citations


Journal ArticleDOI
TL;DR: In this paper, ordered semiconductor ZnO nanowire arrays embedded in anodic alumina membranes (AAM) were fabricated by generating alumina templates with nanochannels, electrodepositing Zn in them, and then oxidizing the Zn nanowires arrays.
Abstract: Ordered semiconductor ZnO nanowire arrays embedded in anodic alumina membranes (AAM) were fabricated by generating alumina templates with nanochannels, electrodepositing Zn in them, and then oxidizing the Zn nanowire arrays. The polycrystalline ZnO nanowires with the diameters ranging from 15 to 90 nm were uniformly assembled into the hexagonally ordered nanochannels of the AAM. Photoluminescence (PL) measurements show a blue PL band in the wavelength range of 450–650 nm caused by the singly ionized oxygen vacancy in ZnO nanowires.

975 citations


Journal ArticleDOI
TL;DR: In this paper, a simple and effective method is presented for producing light-emitting porous silicon (PSi) using a thin layer of Au, Pt, or Au/Pd is deposited on the (100) Si surface prior to immersion in a solution of HF and H2O2 depending on the type of metal deposited and Si doping type and doping level.
Abstract: A simple and effective method is presented for producing light-emitting porous silicon (PSi) A thin (d<10 nm) layer of Au, Pt, or Au/Pd is deposited on the (100) Si surface prior to immersion in a solution of HF and H2O2 Depending on the type of metal deposited and Si doping type and doping level, PSi with different morphologies and light-emitting properties is produced PSi production occurs on the time scale of seconds, without electrical current, in the dark, on both p- and n-type Si Thin metal coatings facilitate the etching in HF and H2O2, and of the metals investigated, Pt yields the fastest etch rates and produces PSi with the most intense luminescence A reaction scheme involving local coupling of redox reactions with the metal is proposed to explain the metal-assisted etching process The observation that some metal remains on the PSi surface after etching raises the possibility of fabricating in situ PSi contacts

948 citations


Journal ArticleDOI
TL;DR: A large electric-pulse-induced reversible resistance change active at room temperature and under zero magnetic field has been discovered in colossal magnetoresistive (CMR) Pr0.7Ca0.3MnO3 thin films.
Abstract: A large electric-pulse-induced reversible resistance change active at room temperature and under zero magnetic field has been discovered in colossal magnetoresistive (CMR) Pr0.7Ca0.3MnO3 thin films. Electric field-direction-dependent resistance changes of more than 1700% were observed under applied pulses of ∼100 ns duration and as low as ±5 V magnitude. The resistance changes were cumulative with pulse number, were reversible and nonvolatile. This electrically induced effect, observed in CMR materials at room temperature has both the benefit of a discovery in materials properties and the promise of applications for thin film manganites in the electronics arena including high-density nonvolatile memory.

945 citations


Journal ArticleDOI
TL;DR: In this article, the authors investigated the field emission properties of carbon nanotube (CNT) films by a scanning anode FE apparatus, revealing a strong dependence on the density and morphology of the CNT deposit.
Abstract: The investigation of the field emission (FE) properties of carbon nanotube (CNT) films by a scanning anode FE apparatus, reveals a strong dependence on the density and morphology of the CNT deposit. Large differences between the microscopic and macroscopic current and emission site densities are observed, and explained in terms of a variation of the field enhancement factor β. As a consequence, the emitted current density can be optimized by tuning the density of CNTs. Films with medium densities (on the order of 107 emitters/cm2, according to electrostatic calculations) show the highest emitted current densities.

Journal ArticleDOI
TL;DR: In this paper, an electric-field assisted assembly technique was used to position individual nanowires suspended in a dielectric medium between two electrodes defined lithographically on a SiO2 substrate.
Abstract: This letter describes an electric-field assisted assembly technique used to position individual nanowires suspended in a dielectric medium between two electrodes defined lithographically on a SiO2 substrate. During the assembly process, the forces that induce alignment are a result of nanowire polarization in the applied alternating electric field. This alignment approach has facilitated rapid electrical characterization of 350- and 70-nm-diameter Au nanowires, which had room-temperature resistivities of approximately 2.9 and 4.5×10−6 Ω cm.

Journal ArticleDOI
TL;DR: In this article, the authors show that the electrical resistivity exhibits moderate anisotropy with respect to the alignment axis, while the thermopower is the same when measured parallel or perpendicular to this axis.
Abstract: Dense, thick films of aligned single wall carbon nanotubes and nanotube ropes have been produced by filtration/deposition from suspension in strong magnetic fields. Electrical resistivity exhibits moderate anisotropy with respect to the alignment axis, while the thermopower is the same when measured parallel or perpendicular to this axis. Both parameters have identical temperature dependencies in the two orientations. Thermal conductivity in the parallel direction exceeds 200 W/mK, within a decade of graphite.

Journal ArticleDOI
TL;DR: In this article, β-Ga2O3 with an energy band gap of 4.9 eV was prepared on silica glass substrates by a pulsed-laser deposition method, and the resulting internal transmittance at the wavelength (248 nm) of the KrF excimer laser exceeded 50% for the 100-nm-thick film.
Abstract: Thin films of β-Ga2O3 with an energy band gap of 4.9 eV were prepared on silica glass substrates by a pulsed-laser deposition method. N-type conductivity up to ∼1 S cm−1 was obtained by Sn-ion doping and deposition under low O2 partial pressure (∼10−5 Pa) at substrate temperatures above 800 °C. The resulting internal transmittance at the wavelength (248 nm) of the KrF excimer laser exceeded 50% for the 100-nm-thick film, making this the most ultraviolet-transparent conductive oxide thin film to date and opening up prospects for applications such as ultraviolet transparent antistatic electric films in ultraviolet lithography.

Journal ArticleDOI
TL;DR: In this article, a method is demonstrated by which liquid-crystalline self-organization in rigid-rod nematic conjugated polymers can be used to control the microstructure of the active semiconducting layer in solution-processed polymer thin-film transistors.
Abstract: A method is demonstrated by which liquid-crystalline self-organization in rigid-rod nematic conjugated polymers can be used to control the microstructure of the active semiconducting layer in solution-processed polymer thin-film transistors (TFTs). Enhanced charge carrier mobilities of 0.01–0.02 cm2/V s and good operating stability have been achieved in polyfluorene copolymer TFTs by preparing the polymer in a nematic glassy state and by aligning the polymer chains parallel to the transport direction with the help of an alignment layer. Mobility anisotropies of 5–8 for current flow parallel and perpendicular to the alignment direction have been observed that are of the same order of magnitude as optical dichroic ratios.

Journal ArticleDOI
TL;DR: In this paper, the phase pure BiFeO3 was synthesized using the oxide mixing technique followed by leaching with dilute nitric acid, and X-ray diffraction pattern indicated that the sample is phase pure.
Abstract: The difficulties in synthesizing phase pure BiFeO3 are well known. In this letter we are reporting the optimized synthesis conditions for obtaining phase pure BiFeO3 ceramic. The oxide mixing technique followed by leaching with dilute nitric acid has been used for the synthesis. X-ray diffraction pattern indicated that the sample is phase pure. Scanning electron microscopy along with energy dispersive x-ray fluorescence analysis confirmed the chemical homogeneity of the sample. No segregation of the impurity phase in the matrix was detected. Moreover, Bi/Fe atomic ratio is observed to be ∼1. The ferroelectric transition of the sample at 836 °C has been detected by differential thermal analysis.

Journal ArticleDOI
TL;DR: In this paper, the electrical and optical properties of photodiodes fabricated in GaN grown by metalorganic chemical vapor deposition have been investigated, and it is shown that small-area devices exhibit stable gain with no evidence of microplasmas.
Abstract: We report the electrical and optical characteristics of avalanche photodiodes fabricated in GaN grown by metalorganic chemical vapor deposition. The current–voltage characteristics indicate a multiplication of >25. Experiment indicates and simulation verifies that the magnitude of the electric field at the onset of avalanche gain is ⩾3 MV/cm. Small-area devices exhibit stable gain with no evidence of microplasmas.

Journal ArticleDOI
TL;DR: In this paper, a ZnO diode was fabricated by using a laser-doping technique to form a p-type zinc-phosphide layer on an n-type znO substrate.
Abstract: A ZnO diode was fabricated by using a laser-doping technique to form a p-type ZnO layer on an n-type ZnO substrate. A zinc-phosphide compound, used as a phosphorous source, was deposited on the ZnO wafer and subjected to excimer-laser pulses. The current–voltage characteristics showed a diode characteristic between the phosphorous-doped p-layer and the n-type substrate. Moreover, light emission, with a band-edge component, was observed by forward current injection at 110 K.

Journal ArticleDOI
TL;DR: In this article, a ceramic-powder polymer composite, making use of a relaxor ferroelectric polymer that has a high room-temperature dielectric constant as the matrix, is developed.
Abstract: A ceramic-powder polymer composite, making use of a relaxor ferroelectric polymer that has a high room-temperature dielectric constant as the matrix, is developed. The experimental data show that the dielectric constant of the composites with Pb(Mg1/3Nb2/3)O3–PbTiO3 powders can reach more than 250 with weak temperature dependence. In addition, the composites under a proper preparation procedure exhibit a high breakdown field strength (>120 MV/m), leading to a maximum energy storage density of more than 15 J/cm3. Experimental results also indicate that the high electron irradiation does not have much effect on the dielectric behavior of Pb(Mg1/3Nb2/3)O3–PbTiO3 powders, possibly due to the relaxor nature of the ceramic.

Journal ArticleDOI
TL;DR: In this paper, the structure of ultrathin ZrO2 layers on Si(001) using medium energy ion scattering and cross-sectional transmission electron microscopy was examined.
Abstract: We have examined the structure of ultrathin ZrO2 layers on Si(001) using medium energy ion scattering and cross-sectional transmission electron microscopy. Films can be deposited on SiO2 layers with highly abrupt interfaces by atomic layer deposition. On HF stripped Si(001), nucleation was inhibited, resulting in poorer film morphology. ZrO2 showed remarkable stability against silicate formation, with no intermixing even after high temperature oxidation. The oxide is vulnerable to high temperature vacuum annealing, with silicidation occurring at temperatures above 900 °C.

Journal ArticleDOI
TL;DR: In this paper, the capacitance of supercapacitors built from multi-walled carbon nanotubes electrodes has been investigated and correlated with microtexture and elemental composition of the materials.
Abstract: Electrochemical characteristics of supercapacitors built from multiwalled carbon nanotubes electrodes have been investigated and correlated with microtexture and elemental composition of the materials. Capacitance has been estimated by cyclovoltammetry at different scan rates from 1 to 10 mV/s, galvanostatic discharge, and impedance spectroscopy in the frequency range from 100 kHz to 1 mHz. The presence of mesopores due to the central canal and/or entanglement is at the origin of an easy accessibility of the ions to the electrode/electrolyte interface for charging the electrical double layer. Pure electrostatic attraction of ions as well as quick pseudofaradaic reactions have been detected upon varying surface functionality. The values of specific capacitance varied from 4 to 135 F/g, depending on the type of nanotubes or/and their posttreatments. Even with moderate specific surface area (below 470 m2/g), due to their accessible mesopores, multiwalled carbon nanotubes represent attractive materials for su...

Journal ArticleDOI
TL;DR: In this article, an exciton blocking layer (EBL) was inserted between the photoactive organic layers and the metal cathode, achieving an external power conversion efficiency of 2.4%±0.3% in vacuumdeposited ultrathin organic bilayer photovoltaic (PV) cells employed in a simple light trapping geometry.
Abstract: We demonstrate a method for efficient photon harvesting in organic thin films, thereby increasing the efficiency of organic photovoltaic cells. By incorporating an exciton-blocking layer (EBL) inserted between the photoactive organic layers and the metal cathode, we achieved an external power conversion efficiency of 2.4%±0.3% in vacuum-deposited ultrathin organic bilayer photovoltaic (PV) cells employed in a simple light trapping geometry. Ultrathin (∼100 A) cells incorporating the transparent, conductive EBL have an internal quantum efficiency as high as 33%±4% over a spectral region matched to the solar spectrum. The very thin organic layers have a low series resistance, allowing for efficient power conversion in organic PV cells under intense (>15 suns) AM1.5 illumination. This device structure demonstrates that control of exciton diffusion in solid-state organic devices leads to a significant increase in the photon-to-carrier conversion efficiency.

Journal ArticleDOI
TL;DR: In this paper, the authors proposed a simple model that describes the finite but increasing resistance in the cracked ITO layer in terms of a small volume of conducting material within each crack.
Abstract: The increase in sheet resistance of indium–tin–oxide (ITO) films on polyethylene terephthalate with increasing tensile strain is reported. The increase in resistance is related to the number of cracks in the conducting layer which depends upon applied strain and film thickness. We propose a simple model that describes the finite but increasing resistance in the cracked ITO layer in terms of a small volume of conducting material within each crack.

Journal ArticleDOI
TL;DR: In this article, the scintillation properties of LaBr3 doped with 0.5% Ce3+ are presented, and an energy resolution of 2.85%±0.05% was observed for the 662 keV full absorption peak.
Abstract: The scintillation properties of LaBr3 doped with 0.5% Ce3+ are presented. Under optical and gamma ray excitation, Ce3+ emission is observed to peak at 356 and 387 nm. The scintillation light output is 61 000±5000 photons/MeV at 662 keV. More than 90% is emitted with a decay time of 35 ns. An energy resolution (full width at half maximum over the peak position) of 2.85%±0.05% was observed for the 662 keV full absorption peak. A time resolution of 385 ps was obtained using BaF2 as second scintillator and gamma rays of 60Co.

Journal ArticleDOI
Byoung Hun Lee1, Laegu Kang1, R. Nieh1, Wen Jie Qi1, Jack C. Lee1 
TL;DR: In this article, the dielectric properties of ultrathin hafnium oxide reoxidized with rapid thermal annealing (RTA) have been investigated and the leakage current was found to be less than 3×10−2 ǫA/cm2 at −1.5 V (i.e., ∼2 V below VFB).
Abstract: Dielectric properties of ultrathin hafnium oxide reoxidized with rapid thermal annealing (RTA) have been investigated. Capacitance equivalent oxide thickness (CET) of 45 A hafnium oxide was scaled down to ∼10 A with a leakage current less than 3×10−2 A/cm2 at −1.5 V (i.e., ∼2 V below VFB). Leakage current increase due to crystallization was not observed even after 900 °C rapid thermal annealing (RTA), but CET did increase after high temperature RTA due to the interfacial layer growth and possible silicate formation in the HfO2 film.

Journal ArticleDOI
TL;DR: In this article, the authors quantified both experimentally and theoretically the diffusion of low-molecular-weight species across the interface between two aqueous solutions in pressure-driven laminar flow in microchannels at high Peclet numbers, showing that the width of reaction-diffusion zone at the interface adjacent to the wall of the channel and transverse to the direction of flow scales as the one-third power of both the axial distance down the channel (from the point where the two streams join) and the average velocity of the flow, instead
Abstract: This letter quantifies both experimentally and theoretically the diffusion of low-molecular-weight species across the interface between two aqueous solutions in pressure-driven laminar flow in microchannels at high Peclet numbers. Confocal fluorescent microscopy was used to visualize a fluorescent product formed by reaction between chemical species carried separately by the two solutions. At steady state, the width of the reaction–diffusion zone at the interface adjacent to the wall of the channel and transverse to the direction of flow scales as the one-third power of both the axial distance down the channel (from the point where the two streams join) and the average velocity of the flow, instead of the more familiar one-half power scaling which was measured in the middle of the channel. A quantitative description of reaction–diffusion processes near the walls of the channel, such as described in this letter, is required for the rational use of laminar flows for performing spatially resolved surface chemistry and biology inside microchannels and for understanding three-dimensional features of mass transport in shearing flows near surfaces.

Journal ArticleDOI
TL;DR: In this paper, the integration of all-polymer field effect transistors in fully functional integrated circuits with operating frequencies of several kHz was demonstrated by a 15 bit code generator circuit using several hundreds of devices.
Abstract: In this letter, we demonstrate the integration of all-polymer field-effect transistors in fully functional integrated circuits with operating frequencies of several kHz. One of the key items is an approach to incorporate low-Ohmic vertical interconnects compatible with an all-polymer approach. Inverters, NAND gates, and ring oscillators with transistor channel lengths down to 1 μm have been constructed. Inverters show voltage amplification at moderate biases and pentacene seven-stage ring oscillators show switching frequencies of a few kHz. The potential to realize large integrated circuits is demonstrated by a 15 bit code generator circuit using several hundreds of devices. The proposed concept was evaluated for three solution-processable organic semiconductors.

Journal ArticleDOI
TL;DR: In this article, it was shown that carbon nanotubes can be grown on contoured surfaces and aligned in a direction always perpendicular to the local substrate surface, primarily induced by the electrical self-bias field imposed on the substrate surface from the plasma environment.
Abstract: Uniform films of well-aligned carbon nanotubes have been grown using microwave plasma-enhanced chemical vapor deposition. It is shown that nanotubes can be grown on contoured surfaces and aligned in a direction always perpendicular to the local substrate surface. The alignment is primarily induced by the electrical self-bias field imposed on the substrate surface from the plasma environment. It is found that switching the plasma source off effectively turns the alignment mechanism off, leading to a smooth transition between the plasma-grown straight nanotubes and the thermally grown “curly” nanotubes. The nanotubes grow at a surprisingly high rate of ∼100 nm/s in our plasma process, which may be important for large-scale commercial production of nanotubes.

Journal ArticleDOI
TL;DR: In this article, a polycrystalline skutterudite partially filled with ytterbium ions was shown to have a relatively high dimensionless figure of merit (ZT) in the presence of Yb atoms.
Abstract: We present evidence of a relatively high dimensionless figure of merit (ZT) in a polycrystalline skutterudite partially filled with ytterbium ions. The small-diameter yet heavy-mass Yb atoms partially filling the voids of the host CoSb3 system exhibit low values of thermal conductivity while the quite favorable electronic properties are not substantially perturbed by the addition of Yb. This combination is ideal for thermoelectric applications exemplifying the “phonon-glass electron-crystal” concept of a thermoelectric material, resulting in ZT=0.3 at room temperature and ZT∼1 at 600 K for Yb0.19Co4Sb12.

Journal ArticleDOI
TL;DR: An ultraviolet light-emitting diode (LED) operating at room temperature was realized using a p–n heterojunction composed of transparent conductive oxides, p-SrCu2O2 and n-ZnO using conventional photolithography with the aid of reactive ion etching to fabricate the LED device.
Abstract: An ultraviolet light-emitting diode (LED) operating at room temperature was realized using a p–n heterojunction composed of transparent conductive oxides, p-SrCu2O2 and n-ZnO. Multilayered films prepared by a pulsed-laser deposition technique were processed by conventional photolithography with the aid of reactive ion etching to fabricate the LED device. A rather sharp emission band centered at 382 nm was generated when a forward bias voltage exceeding the turn-on voltage of 3 V was applied to the junction. The emission may be attributed to a transition associated with the electron–hole plasma of ZnO.