Showing papers in "Applied physics reviews in 2014"

Nanoscale thermal transport. II. 2003–2012

Abstract: A diverse spectrum of technology drivers such as improved thermal barriers, higher efficiency thermoelectric energy conversion, phase-change memory, heat-assisted magnetic recording, thermal management of nanoscale electronics, and nanoparticles for thermal medical therapies are motivating studies of the applied physics of thermal transport at the nanoscale. This review emphasizes developments in experiment, theory, and computation in the past ten years and summarizes the present status of the field. Interfaces become increasingly important on small length scales. Research during the past decade has extended studies of interfaces between simple metals and inorganic crystals to interfaces with molecular materials and liquids with systematic control of interface chemistry and physics. At separations on the order of ∼1 nm, the science of radiative transport through nanoscale gaps overlaps with thermal conduction by the coupling of electronic and vibrational excitations across weakly bonded or rough interface...

The physics and chemistry of the Schottky barrier height

Abstract: The formation of the Schottky barrier height (SBH) is a complex problem because of the dependence of the SBH on the atomic structure of the metal-semiconductor (MS) interface. Existing models of the SBH are too simple to realistically treat the chemistry exhibited at MS interfaces. This article points out, through examination of available experimental and theoretical results, that a comprehensive, quantum-mechanics-based picture of SBH formation can already be constructed, although no simple equations can emerge, which are applicable for all MS interfaces. Important concepts and principles in physics and chemistry that govern the formation of the SBH are described in detail, from which the experimental and theoretical results for individual MS interfaces can be understood. Strategies used and results obtained from recent investigations to systematically modify the SBH are also examined from the perspective of the physical and chemical principles of the MS interface.

Energy harvesting from low frequency applications using piezoelectric materials

Abstract: In an effort to eliminate the replacement of the batteries of electronic devices that are difficult or impractical to service once deployed, harvesting energy from mechanical vibrations or impacts using piezoelectric materials has been researched over the last several decades. However, a majority of these applications have very low input frequencies. This presents a challenge for the researchers to optimize the energy output of piezoelectric energy harvesters, due to the relatively high elastic moduli of piezoelectric materials used to date. This paper reviews the current state of research on piezoelectric energy harvesting devices for low frequency (0–100 Hz) applications and the methods that have been developed to improve the power outputs of the piezoelectric energy harvesters. Various key aspects that contribute to the overall performance of a piezoelectric energy harvester are discussed, including geometries of the piezoelectric element, types of piezoelectric material used, techniques employed to match the resonance frequency of the piezoelectric element to input frequency of the host structure, and electronic circuits specifically designed for energy harvesters.

Electrostrictive effect in ferroelectrics: An alternative approach to improve piezoelectricity

Abstract: Electrostriction plays an important role in the electromechanical behavior of ferroelectrics and describes a phenomenon in dielectrics where the strain varies proportional to the square of the electric field/polarization. Perovskite ferroelectrics demonstrating high piezoelectric performance, including BaTiO3, Pb(Zr1-xTix)O3, and relaxor-PbTiO3 materials, have been widely used in various electromechanical devices. To improve the piezoelectric activity of these materials, efforts have been focused on the ferroelectric phase transition regions, including shift the composition to the morphotropic phase boundary or shift polymorphic phase transition to room temperature. However, there is not much room left to further enhance the piezoelectric response in perovskite solid solutions using this approach. With the purpose of exploring alternative approaches, the electrostrictive effect is systematically surveyed in this paper. Initially, the techniques for measuring the electrostrictive effect are given and compa...

Femtosecond laser three-dimensional micro- and nanofabrication

Abstract: The rapid development of the femtosecond laser has revolutionized materials processing due to its unique characteristics of ultrashort pulse width and extremely high peak intensity. The short pulse width suppresses the formation of a heat-affected zone, which is vital for ultrahigh precision fabrication, whereas the high peak intensity allows nonlinear interactions such as multiphoton absorption and tunneling ionization to be induced in transparent materials, which provides versatility in terms of the materials that can be processed. More interestingly, irradiation with tightly focused femtosecond laser pulses inside transparent materials makes three-dimensional (3D) micro- and nanofabrication available due to efficient confinement of the nonlinear interactions within the focal volume. Additive manufacturing (stereolithography) based on multiphoton absorption (two-photon polymerization) enables the fabrication of 3D polymer micro- and nanostructures for photonic devices, micro- and nanomachines, and microfluidic devices, and has applications for biomedical and tissue engineering. Subtractive manufacturing based on internal modification and fabrication can realize the direct fabrication of 3D microfluidics, micromechanics, microelectronics, and photonic microcomponents in glass. These microcomponents can be easily integrated in a single glass microchip by a simple procedure using a femtosecond laser to realize more functional microdevices, such as optofluidics and integrated photonic microdevices. The highly localized multiphoton absorption of a tightly focused femtosecond laser in glass can also induce strong absorption only at the interface of two closely stacked glass substrates. Consequently, glass bonding can be performed based on fusion welding with femtosecond laser irradiation, which provides the potential for applications in electronics, optics, microelectromechanical systems, medical devices, microfluidic devices, and small satellites. This review paper describes the concepts and principles of femtosecond laser 3D micro- and nanofabrication and presents a comprehensive review on the state-of-the-art, applications, and the future prospects of this technology.

Piezoelectric energy harvesting: State-of-the-art and challenges

Abstract: Piezoelectric energy harvesting has attracted wide attention from researchers especially in the last decade due to its advantages such as high power density, architectural simplicity, and scalability. As a result, the number of studies on piezoelectric energy harvesting published in the last 5 years is more than twice the sum of publications on its electromagnetic and electrostatic counterparts. This paper presents a comprehensive review on the history and current state-of-the art of piezoelectric energy harvesting. A brief theory section presents the basic principles of piezoelectric energy conversion and introduces the most commonly used mechanical architectures. The theory section is followed by a literature survey on piezoelectric energy harvesters, which are classified into three groups: (i) macro- and mesoscale, (ii) MEMS scale, and (iii) nanoscale. The size of a piezoelectric energy harvester affects a variety of parameters such as its weight, fabrication method, achievable power output level, and potential application areas. Consequently, size-based classification provides a reliable and effective basis to study various piezoelectric energy harvesters. The literature survey on each scale group is concluded with a summary, potential application areas, and future directions. In a separate section, the most prominent challenges in piezoelectric energy harvesting and the studies focusing on these challenges are discussed. The conclusion part summarizes the current standing of piezoelectric energy harvesters as possible candidates for various applications and discusses the issues that need to be addressed for realization of practical piezoelectric energy harvesting devices.

Electric field control of magnetism using BiFeO3-based heterostructures

Abstract: Conventional CMOS based logic and magnetic based data storage devices require the shuttling of electrons for data processing and storage. As these devices are scaled to increasingly smaller dimensions in the pursuit of speed and storage density, significant energy dissipation in the form of heat has become a center stage issue for the microelectronics industry. By taking advantage of the strong correlations between ferroic orders in multiferroics, specifically the coupling between ferroelectric and magnetic orders (magnetoelectricity), new device functionalities with ultra-low energy consumption can be envisioned. In this article, we review the advances and highlight challenges toward this goal with a particular focus on the room temperature magnetoelectric multiferroic, BiFeO3, exchange coupled to a ferromagnet. We summarize our understanding of the nature of exchange coupling and the mechanisms of the voltage control of ferromagnetism observed in these heterostructures.

Applications of cavity optomechanics

Abstract: “Cavity-optomechanics” aims to study the quantum properties of mechanical systems. A common strategy implemented in order to achieve this goal couples a high finesse photonic cavity to a high quality factor mechanical resonator. Then, using feedback forces such as radiation pressure, one can cool the mechanical mode of interest into the quantum ground state and create non-classical states of mechanical motion. On the path towards achieving these goals, many near-term applications of this field have emerged. After briefly introducing optomechanical systems and describing the current state-of-the-art experimental results, this article summarizes some of the more exciting practical applications such as ultra-sensitive, high bandwidth accelerometers and force sensors, low phase noise x-band integrated microwave oscillators and optical signal processing such as optical delay-lines, wavelength converters, and tunable optical filters. In this rapidly evolving field, new applications are emerging at a fast pace, but this article concentrates on the aforementioned lab-based applications as these are the most promising avenues for near-term real-world applications. New basic science applications are also becoming apparent such as the generation of squeezed light, testing gravitational theories and for providing a link between disparate quantum systems.

Nanoporous alumina as templates for multifunctional applications

Abstract: Due to its manufacturing and size tailoring ease, porous anodic alumina (PAA) templates are an elegant physical-chemical nanopatterning approach and an emergent alternative to more sophisticated and expensive methods currently used in nanofabrication. In this review, we will describe the ground work on the fabrication methods of PAA membranes and PAA-based nanostructures. We will present the specificities of the electrochemical growth processes of multifunctional nanomaterials with diversified shapes (e.g., nanowires and nanotubes), and the fabrication techniques used to grow ordered nanohole arrays. We will then focus on the fabrication, properties and applications of magnetic nanostructures grown on PAA and illustrate their dependence on internal (diameter, interpore distance, length, composition) and external (temperature and applied magnetic field intensity and direction) parameters. Finally, the most outstanding experimental findings on PAA-grown nanostructures and their trends for technological applications (sensors, energy harvesting, metamaterials, and biotechnology) will be addressed.

Progress in the development and understanding of advanced low k and ultralow k dielectrics for very large-scale integrated interconnects—State of the art

Abstract: The improved performance of the semiconductor microprocessors was achieved for several decades by continuous scaling of the device dimensions while using the same materials for all device generations. At the 0.25 μm technology node, the interconnect of the integrated circuit (IC) became the bottleneck to the improvement of IC performance. One solution was introduction of new materials to reduce the interconnect resistance-capacitance. After the replacement of Al with Cu in 1997, the inter- and intralevel dielectric insulator of the interconnect (ILD), SiO2, was replaced about 7 years later with the low dielectric constant (low-k) SiCOH at the 90 nm node. The subsequent scaling of the devices required the development of ultralow-k porous pSiCOH to maintain the capacitance of the interconnect as low as possible. The composition and porosity of pSiCOH dielectrics affected, among others, the resistance of the dielectrics to damage during integration processing and reduced their mechanical strength, thereby af...

New concepts in infrared photodetector designs

Abstract: In 1959, Lawson and co-workers published the paper which triggered development of variable band gap Hg1−xCdxTe (HgCdTe) alloys providing an unprecedented degree of freedom in infrared detector design. HgCdTe ternary alloy has been used for realization of detectors operating under various modalities including: photoconductor, photodiode, and metal-insulator-semiconductor detector designs. Over the last five decades, this material system has successfully overcome the challenges from other material systems. It is important to notice that none of these competitors can compete in terms of fundamental properties. The competition may represent more mature technology but not higher performance or, with the exception of thermal detectors, higher operating temperatures (HOTs) for ultimate performance. In the last two decades, several new concepts for improvement of the performance of photodetectors have been proposed. These new concepts are particularly addressing the drive towards the so called HOT detectors aiming to increase detector operating temperatures. In this paper, new strategies in photodetector designs are reviewed, including barrier detectors, unipolar barrier photodiodes, multistage detectors and trapping detectors. Some of these new solutions have emerged as a real competitor to HgCdTe photodetectors.

Modeling techniques for quantum cascade lasers

Abstract: Quantum cascade lasers are unipolar semiconductor lasers covering a wide range of the infrared and terahertz spectrum. Lasing action is achieved by using optical intersubband transitions between quantized states in specifically designed multiple-quantum-well heterostructures. A systematic improvement of quantum cascade lasers with respect to operating temperature, efficiency, and spectral range requires detailed modeling of the underlying physical processes in these structures. Moreover, the quantum cascade laser constitutes a versatile model device for the development and improvement of simulation techniques in nano- and optoelectronics. This review provides a comprehensive survey and discussion of the modeling techniques used for the simulation of quantum cascade lasers. The main focus is on the modeling of carrier transport in the nanostructured gain medium, while the simulation of the optical cavity is covered at a more basic level. Specifically, the transfer matrix and finite difference methods for solving the one-dimensional Schrodinger equation and Schrodinger-Poisson system are discussed, providing the quantized states in the multiple-quantum-well active region. The modeling of the optical cavity is covered with a focus on basic waveguide resonator structures. Furthermore, various carrier transport simulation methods are discussed, ranging from basic empirical approaches to advanced self-consistent techniques. The methods include empirical rate equation and related Maxwell-Bloch equation approaches, self-consistent rate equation and ensemble Monte Carlo methods, as well as quantum transport approaches, in particular the density matrix and non-equilibrium Green's function formalism. The derived scattering rates and self-energies are generally valid for n-type devices based on one-dimensional quantum confinement, such as quantum well structures.

Quantum confinement in Si and Ge nanostructures: Theory and experiment

Abstract: The role of quantum confinement (QC) in Si and Ge nanostructures (NSs) including quantum dots, quantum wires, and quantum wells is assessed under a wide variety of fabrication methods in terms of both their structural and optical properties. Structural properties include interface states, defect states in a matrix material, and stress, all of which alter the electronic states and hence the measured optical properties. We demonstrate how variations in the fabrication method lead to differences in the NS properties, where the most relevant parameters for each type of fabrication method are highlighted. Si embedded in, or layered between, SiO2, and the role of the sub-oxide interface states embodies much of the discussion. Other matrix materials include Si3N4 and Al2O3. Si NSs exhibit a complicated optical spectrum, because the coupling between the interface states and the confined carriers manifests with varying magnitude depending on the dimension of confinement. Ge NSs do not produce well-defined luminescence due to confined carriers, because of the strong influence from oxygen vacancy defect states. Variations in Si and Ge NS properties are considered in terms of different theoretical models of QC (effective mass approximation, tight binding method, and pseudopotential method). For each theoretical model, we discuss the treatment of the relevant experimental parameters.

Diffusion of n-type dopants in germanium

Abstract: Germanium is being actively considered by the semiconductor community as a mainstream material for nanoelectronic applications. Germanium has advantageous materials properties; however, its dopant-defect interactions are less understood as compared to the mainstream material, silicon. The understanding of self- and dopant diffusion is essential to form well defined doped regions. Although p-type dopants such as boron exhibit limited diffusion, n-type dopants such as phosphorous, arsenic, and antimony diffuse quickly via vacancy-mediated diffusion mechanisms. In the present review, we mainly focus on the impact of intrinsic defects on the diffusion mechanisms of donor atoms and point defect engineering strategies to restrain donor atom diffusion and to enhance their electrical activation.

About the deformation of ferroelectric hystereses

Abstract: Studying ferroelectric hafnium oxide with focus on memory applications for the past years, discussions frequently involved the shape of measured polarization hystereses, its relation to the device performance, and how to optimize it. A perfect model-like hysteresis is of nearly rectangular shape and all deviations from this situation have to have a certain physical origin. Different phenomena and their impact on the shape of the polarization hystereses were reported in literature: Aging, imprint, fatigue, or dielectric interface layers to name a few examples. A collection of these phenomena is not easily found up to now. Thus, filling or at least reducing this gap is one of the goals of this work. Moreover, observing a pinched, slanted, or displaced hysteresis, it is quite tempting to try the reverse approach: a derivation of potential structural origins for this curve shape. First, the basics of the dynamic hysteresis measurement and the ferroelectric memories are briefly reviewed. The figures of interest are derived to ensure a proper assessment of imperfections in the hysteresis shape and their influence. It is discussed how a closer look on the polarization loop helps to draw conclusions on what might have caused such a shape or at least how to rule out some phenomena if the expected indications are not reflected in the present curve. Of course, further structural or electrical studies, as they are exemplarily pointed out, are indispensable to find the root cause(s) for the deviations from the ideal hysteresis. But sophisticated methods are not always accessible straightaway and, moreover, a pointer on where to start is always helpful. Especially, the transient currents recorded during a dynamic hysteresis measurement are stressed as a valuable instrument for this purpose. Despite their known potential, these currents are seldom shown in literature.

Harnessing large deformation and instabilities of soft dielectrics: Theory, experiment, and application

Abstract: Widely used as insulators, capacitors, and transducers in daily life, soft dielectrics based on polymers and polymeric gels play important roles in modern electrified society. Owning to their mechanical compliance, soft dielectrics subject to voltages frequently undergo large deformation and mechanical instabilities. The deformation and instabilities can lead to detrimental failures in some applications of soft dielectrics such as polymer capacitors and insulating gels but can also be rationally harnessed to enable novel functions such as artificial muscle, dynamic surface patterning, and energy harvesting. According to mechanical constraints on soft dielectrics, we classify their deformation and instabilities into three generic modes: (i) thinning and pull-in, (ii) electro-creasing to cratering, and (iii) electro-cavitation. We then provide a systematic understanding of different modes of deformation and instabilities of soft dielectrics by integrating state-of-the-art experimental methods and observations, theoretical models, and applications. Based on the understanding, a systematic set of strategies to prevent or harness the deformation and instabilities of soft dielectrics for diverse applications are discussed. The review is concluded with perspectives on future directions of research in this rapidly evolving field.

Challenges and opportunities of ZnO-related single crystalline heterostructures

Abstract: Recent technological advancement in ZnO heterostructures has expanded the possibility of device functionalities to various kinds of applications. In order to extract novel device functionalities in the heterostructures, one needs to fabricate high quality films and interfaces with minimal impurities, defects, and disorder. With employing molecular-beam epitaxy and single crystal ZnO substrates, the density of residual impurities and defects can be drastically reduced and the optical and electrical properties have been dramatically improved for the ZnO films and heterostructures with MgxZn1-xO. Here, we overview such recent technological advancement from various aspects of application. Towards optoelectronic devices such as a light emitter and a photodetector in an ultraviolet region, the development of p-type ZnO and the fabrication of excellent Schottky contact, respectively, have been subjected to intensive studies for years. For the former, the fine tuning of the growth conditions to make MgxZn1-xO as ...

Extreme ultraviolet lithography and three dimensional integrated circuit—A review

Abstract: Extreme ultraviolet lithography (EUVL) and three dimensional integrated circuit (3D IC) were thoroughly reviewed. Since proposed in 1988, EUVL obtained intensive studies globally and, after 2000, became the most promising next generation lithography method even though challenges were present in almost all aspects of EUVL technology. Commercial step-and-scan tools for preproduction are installed now with full field capability; however, EUV source power at intermediate focus (IF) has not yet met volume manufacturing requirements. Compared with the target of 200 W in-band power at IF, current tools can supply only approximately 40–55 W. EUVL resist has improved significantly in the last few years, with 13 nm line/space half-pitch resolution being produced with approximately 3–4 nm line width roughness (LWR), but LWR needs 2× improvement. Creating a defect-free EUVL mask is currently an obstacle. Actual adoption of EUVL for 22 nm and beyond technology nodes will depend on the extension of current optical lithography (193 nm immersion lithography, combined with multiple patterning techniques), as well as other methods such as 3D IC. Lithography has been the enabler for IC performance improvement by increasing device density, clock rate, and transistor rate. However, after the turn of the century, IC scaling resulted in short-channel effect, which decreases power efficiency dramatically, so clock frequency almost stopped increasing. Although further IC scaling by lithography reduces gate delay, interconnect delay and memory wall are dominant in determining the IC performance. 3D IC technology is a critical technology today because it offers a reasonable route to further improve IC performance. It increases device density, reduces the interconnect delay, and breaks memory wall with the application of 3D stacking using through silicon via. 3D IC also makes one chip package have more functional diversification than those enhanced only by shrinking the size of the features. The main advantages of 3D IC are the smaller form factor, low energy consumption, high speed, and functional diversification. EUVL, if adopted, will continue to enable IC performance improvement at a slower rate, but 3D IC provides an alternative way to improve the system performance. The best scenario is the adoption of both EUVL and 3D IC. However, the possible further delay of EUVL could enhance the realization of 3D IC for IC system improvement.

Recent progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport

Abstract: Spin-based electronics or spintronics is an emerging field, in which we try to utilize spin degrees of freedom as well as charge transport in materials and devices. While metal-based spin-devices, such as magnetic-field sensors and magnetoresistive random access memory using giant magnetoresistance and tunneling magnetoresistance, are already put to practical use, semiconductor-based spintronics has greater potential for expansion because of good compatibility with existing semiconductor technology. Many semiconductor-based spintronics devices with useful functionalities have been proposed and explored so far. To realize those devices and functionalities, we definitely need appropriate materials which have both the properties of semiconductors and ferromagnets. Ferromagnetic semiconductors (FMSs), which are alloy semiconductors containing magnetic atoms such as Mn and Fe, are one of the most promising classes of materials for this purpose and thus have been intensively studied for the past two decades. Here, we review the recent progress in the studies of the most prototypical III-V based FMS, p-type (GaMn)As and its heterostructures with focus on tunneling transport, Fermi level, and bandstructure. Furthermore, we cover the properties of a new n-type FMS, (In,Fe)As, which shows electron-induced ferromagnetism. These FMS materials having zinc-blende crystal structure show excellent compatibility with well-developed III-V heterostructures and devices.

Magnetic and charge ordering in nanosized manganites

Abstract: Perovskite manganites exhibit a wide range of functional properties, such as colossal magneto-resistance, magnetocaloric effect, multiferroic property, and some interesting physical phenomena including spin, charge, and orbital ordering. Recent advances in science and technology associated with perovskite oxides have resulted in the feature sizes of microelectronic devices down-scaling into nanoscale dimensions. The nanoscale perovskite manganites display novel magnetic and electronic properties that are different from their bulk and film counterparts. Understanding the size effects of perovskite manganites at the nanoscale is of importance not only for the fundamental scientific research but also for developing next generation of electronic and magnetic nanodevices. In this paper, the current understanding and the fundamental issues related to the size effects on the magnetic properties and charge ordering in manganites are reviewed, which covers lattice structure, magnetic and electronic properties in both ferromagnetic and antiferromagnetic based manganites. In addition to review the literatures, this article identifies the promising avenues for the future research in this area.

Mechanisms of growth and defect properties of epitaxial SiC

Abstract: In the last ten years, large improvements in the epitaxial silicon carbide processes have been made. The introduction of chloride precursors, the epitaxial growth on large area substrate with low defect density, the improvement of the surface morphology, the understanding of the chemical vapour deposition (CVD) reactions, and epitaxial mechanisms by advanced simulations are just the main results obtained in the homo-epitaxy process of 4H-SiC. After this large stride in the process of SiC epitaxial growth, it is time to collect this knowledge in a review that can be a reference point for the future work in this interesting field. The structure of the review is the following. After an introduction on the evolution and history of the epitaxial growth of 4H-SiC, the main physics parameter of this epitaxial growth process is explained in detail using the traditional Burton-Cabrera-Franck theory and the experimental observations of the surface instability due to the off-axis growths. Then the introduction of chlorinated precursors in the epitaxial process is reviewed and the effect of this new process on Schottky diodes characteristics is shown. The improvement of the epitaxy process is strictly related to the improvement of the simulation of the growth that helps the researchers to understand the effect of different parameters on such complex system. Then, a large part of the review is devoted to the simulations of the CVD systems, the reaction in the gas phase of the different precursors and the surface reaction models. Also, some important results obtained by Monte Carlo simulation on the study of different growth parameters that influence the formation of defects and their evolution are reported. Finally, the influence of different process parameters and in particular of the growth rate on the formation or the reduction of the principal defects that are observed in the epitaxial layer is reviewed. We have divided these defects in four categories: 3D defects (epi-stacking faults and inclusions), 2D defects (stacking faults), 1D defects (dislocations), and 0D defects (point defects). Also the influences of the growth parameters on the surface morphology (step-bunching) and the correlation with defects have been reviewed. In the conclusions the main results on the chloride epitaxy has been summarized and an outlook of this process in the next years has been presented with the actual understanding of the mechanism of the silicon carbide epitaxial growth.

Ice-templated structures for biomedical tissue repair: From physics to final scaffolds

Abstract: Ice-templating techniques, including freeze-drying and freeze casting, are extremely versatile and can be used with a variety of materials systems. The process relies on the freezing of a water based solution. During freezing, ice nucleates within the solution and concentrates the solute in the regions between the growing crystals. Once the ice is removed via sublimation, the solute remains in a porous structure, which is a negative of the ice. As the final structure of the ice relies on the freezing of the solution, the variables which influence ice nucleation and growth alter the structure of ice-templated scaffolds. Nucleation, the initial step of freezing, can be altered by the type and concentration of solutes within the solution, as well as the set cooling rate before freezing. After nucleation, crystal growth and annealing processes, such as Ostwald ripening, determine the features of the final scaffold. Both crystal growth and annealing are sensitive to many factors including the set freezing temperature and solutes. The porous structures created using ice-templating allow scaffolds to be used for many diverse applications, from microfluidics to biomedical tissue engineering. Within the field of tissue engineering, scaffold structure can influence cellular behavior, and is thus critical for determining the biological stimulus supplied by the scaffold. The research focusing on controlling the ice-templated structure serves as a model for how other ice-templating systems might be tailored, to expand the applications of ice-templated structures to their full potential.

Interface-assisted molecular spintronics

Abstract: Molecular spintronics, a field that utilizes the spin state of organic molecules to develop magneto-electronic devices, has shown an enormous scientific activity for more than a decade. But, in the last couple of years, new insights in understanding the fundamental phenomena of molecular interaction on magnetic surfaces, forming a hybrid interface, are presenting a new pathway for developing the subfield of interface-assisted molecular spintronics. The recent exploration of such hybrid interfaces involving carbon based aromatic molecules shows a significant excitement and promise over the previously studied single molecular magnets. In the above new scenario, hybridization of the molecular orbitals with the spin-polarized bands of the surface creates new interface states with unique electronic and magnetic character. This study opens up a molecular-genome initiative in designing new handles to functionalize the spin dependent electronic properties of the hybrid interface to construct spin-functional tailor-made devices. Through this article, we review this subject by presenting a fundamental understanding of the interface spin-chemistry and spin-physics by taking support of advanced computational and spectroscopy tools to investigate molecular spin responses with demonstration of new interface phenomena. Spin-polarized scanning tunneling spectroscopy is favorably considered to be an important tool to investigate these hybrid interfaces with intra-molecular spatial resolution. Finally, by addressing some of the recent findings, we propose novel device schemes towards building interface tailored molecular spintronic devices for applications in sensor, memory, and quantum computing.

Exploring the significance of structural hierarchy in material systems—A review

Abstract: Structural hierarchy and heterogeneity are inherent features in biological materials, but their significance in affecting the system behaviors is yet to be fully understood. In Sec. I, this article first identifies the major characteristics that manifest, or are resulted from, such hierarchy and heterogeneity in materials. Then in Sec. II, it presents several typical natural material systems including wood, bone, and others from animals to illustrate the proposed views. The paper also discusses a man-made smart material, textiles, to demonstrate that textiles are hierarchal, multifunctional, highly complex, and arguably the engineered material closest on a par with biological materials in complexity, and, more importantly, we can still learn quite a few new things from them in development of novel materials. In Sec. III, the paper summarizes several general approaches in developing a hierarchal material system at various scales, including structure thinning and splitting, laminating and layering, spatial and angular orientation, heterogenization and hybridization, and analyzes the advantages associated with them. It also stresses the adverse consequences once the existing structural hierarchy breaks down due to various mutations in biological systems. It discusses, in particular, the influences of moisture and air on material properties, given the near ubiquitousness of both air and water in materials. It next deals with in Sec. IV, some theoretical issues in material research including packing and ordering, the bi-modular mechanics, the behavior non-affinities due to disparity in hierarchal levels, the importance of system dimensionality in a hierarchal material system, and more philosophically, the issues of Nature's wisdom versus Intelligent Design. Section V then offers some concluding remarks, including a recap of the major issues covered in this article, and some general conclusions derived from the analyses and discussions. The main purpose of this paper is to make an effort to explore, identify, derive, or theorize some generic principles based on the existing results, not to offer another comprehensive review of current research activities in the fields for that there already exist some excellent ones. This paper examines the related topics with several approaches to not only reveal the underlying geometrical and physical mechanisms but also to emphasize the ways in which such mechanisms may be applied to developing engineered material systems with novel properties.

Time resolved electron microscopy for in situ experiments

Abstract: Transmission electron microscopy has functioned for decades as a platform for in situ observation of materials and processes with high spatial resolution. Yet, the dynamics often remain elusive, as they unfold too fast to discern at these small spatial scales under traditional imaging conditions. Simply shortening the exposure time in hopes of capturing the action has limitations, as the number of electrons will eventually be reduced to the point where noise overtakes the signal in the image. Pulsed electron sources with high instantaneous current have successfully shortened exposure times (thus increasing the temporal resolution) by about six orders of magnitude over conventional sources while providing the necessary signal-to-noise ratio for dynamic imaging. We describe here the development of this new class of microscope and the principles of its operation, with examples of its application to problems in materials science.

Porous silicon for electrical isolation in radio frequency devices: A review

Abstract: The increasing expansion of telecommunication applications leads to the integration of complete system-on-chip associating analog and digital processing units. Besides, the passive elements occupy an increasing silicon footprint, compromising circuit scalability and cost. Moreover, passive components’ performances are limited by the proximity of lossy Si substrate and surrounding metallization. Then, obviously, the characteristics of the substrate become crucial for monolithic radio frequency (RF) systems to reach high performances. So, looking for integrated circuit compatible processes, porous silicon (PS) seems to be a promising candidate as it can provide localized isolating regions from various silicon substrates. In this review, we first present all the possible porous silicon substrates, which can be used for RF devices. In particular, we put the emphasis on the etching conditions, leading to high thickness localized PS layers. The intrinsic electrical properties of porous silicon such as AC electrical conductivity or dielectric constant are also detailed, and the results extracted from the literature are commented. Then, we describe the performances of widespread RF devices, that is, inductors or coplanar waveguides. Finally, we describe methodologies used for predicting RF electrical responses of PS isolated devices, based on electromagnetic simulations.

Tracing the 5000-year recorded history of inorganic thin films from ∼3000 BC to the early 1900s AD

Abstract: Gold is very likely the first metal discovered by man, more than 11 000 years ago. However, unlike copper (∼9000 BC), bronze (∼3500 BC), and wrought iron (∼2500–3000 BC), gold is too soft for fabrication of tools and weapons. Instead, it was used for decoration, religious artifacts, and commerce. The earliest documented inorganic thin films were gold layers, some less than 3000 A thick, produced chemi-mechanically by Egyptians approximately 5000 years ago. Examples, gilded on statues and artifacts (requiring interfacial adhesion layers), were found in early stone pyramids dating to ∼2650 BC in Saqqara, Egypt. Spectacular samples of embossed Au sheets date to at least 2600 BC. The Moche Indians of northern Peru developed electroless gold plating (an auto-catalytic reaction) in ∼100 BC and applied it to intricate Cu masks. The earliest published electroplating experiments were ∼1800 AD, immediately following the invention of the dc electrochemical battery by Volta. Chemical vapor deposition (CVD) of metal f...

Dynamics of spin charge carriers in polyaniline

Abstract: The review summarizes the results of the study of emeraldine forms of polyaniline by multifrequency (9.7–140 GHz, 3-cm and 2-mm) wavebands Electron Paramagnetic Resonance (EPR) spectroscopy combined with the spin label and probe, steady-state saturation of spin-packets, and saturation transfer methods. Spin excitations formed in emeraldine form of polyaniline govern structure, magnetic resonance, and electronic properties of the polymer. Conductivity in neutral or weakly doped samples is defined mainly by interchain charge tunneling in the frames of the Kivelson theory. As the doping level increases, this process is replaced by a charge thermal activation transport by molecular-lattice polarons. In heavily doped polyaniline, the dominating is the Mott charge hopping between well-conducting crystalline ravels embedded into amorphous polymer matrix. The main properties of polyaniline are described in the first part. The theoretical background of the magnetic, relaxation, and dynamics study of nonlinear spin carriers transferring a charge in polyaniline is briefly explicated in the second part. An original data obtained in the EPR study of the nature, relaxation, and dynamics of polarons as well as the mechanism of their transfer in polyaniline chemically modified by sulfuric, hydrochloric, camphorsulfonic, 2-acrylamido-2-methyl-1-propanesulfonic, and para-toluenesulfonic acids up to different doping levels are analyzed in the third part. Some examples of utilization of polyaniline in molecular electronics and spintronics are described.

Effect of low-temperature annealing on the electronic- and band-structures of (Ga,Mn)As epitaxial layers

Abstract: The effect of outdiffusion of Mn interstitials from (Ga,Mn)As epitaxial layers, caused by post-growth low-temperature annealing, on their electronic- and band-structure properties has been investigated by modulation photoreflectance (PR) spectroscopy. The annealing-induced changes in structural and magnetic properties of the layers were examined with high-resolution X-ray diffractometry and superconducting quantum interference device magnetometry, respectively. They confirmed an outdiffusion of Mn interstitials from the layers and an enhancement in their hole concentration, which were more efficient for the layer covered with a Sb cap acting as a sink for diffusing Mn interstitials. The PR results demonstrating a decrease in the band-gap-transition energy in the as-grown (Ga,Mn)As layers, with respect to that in the reference GaAs one, are interpreted by assuming a merging of the Mn-related impurity band with the GaAs valence band. Whereas an increase in the band-gap-transition energy caused by the annealing treatment of the (Ga,Mn)As layers is interpreted as a result of annealing-induced enhancement of the free-hole concentration and the Fermi level location within the valence band. The experimental results are consistent with the valence-band origin of itinerant holes mediating ferromagnetic ordering in (Ga,Mn)As, in agreement with the Zener model for ferromagnetic semiconductors.

Devices and approaches for generating specific high-affinity nucleic acid aptamers

Abstract: High-affinity and highly specific antibody proteins have played a critical role in biological imaging, medical diagnostics, and therapeutics. Recently, a new class of molecules called aptamers has emerged as an alternative to antibodies. Aptamers are short nucleic acid molecules that can be generated and synthesized in vitro to bind to virtually any target in a wide range of environments. They are, in principal, less expensive and more reproducible than antibodies, and their versatility creates possibilities for new technologies. Aptamers are generated using libraries of nucleic acid molecules with random sequences that are subjected to affinity selections for binding to specific target molecules. This is commonly done through a process called Systematic Evolution of Ligands by EXponential enrichment, in which target-bound nucleic acids are isolated from the pool, amplified to high copy numbers, and then reselected against the desired target. This iterative process is continued until the highest affinity nucleic acid sequences dominate the enriched pool. Traditional selections require a dozen or more laborious cycles to isolate strongly binding aptamers, which can take months to complete and consume large quantities of reagents. However, new devices and insights from engineering and the physical sciences have contributed to a reduction in the time and effort needed to generate aptamers. As the demand for these new molecules increases, more efficient and sensitive selection technologies will be needed. These new technologies will need to use smaller samples, exploit a wider range of chemistries and techniques for manipulating binding, and integrate and automate the selection steps. Here, we review new methods and technologies that are being developed towards this goal, and we discuss their roles in accelerating the availability of novel aptamers.