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Showing papers in "arXiv: Materials Science in 2007"


Journal ArticleDOI
TL;DR: In this article, the authors show that when epitaxially grown on the SiC substrate, a gap of ~ 0.26 is produced and this gap decreases as the sample thickness increases and eventually approaches zero when the number of layers exceeds four.
Abstract: Graphene has shown great application potentials as the host material for next generation electronic devices. However, despite its intriguing properties, one of the biggest hurdles for graphene to be useful as an electronic material is its lacking of an energy gap in the electronic spectra. This, for example, prevents the use of graphene in making transistors. Although several proposals have been made to open a gap in graphene's electronic spectra, they all require complex engineering of the graphene layer. Here we show that when graphene is epitaxially grown on the SiC substrate, a gap of ~ 0.26 is produced. This gap decreases as the sample thickness increases and eventually approaches zero when the number of layers exceeds four. We propose that the origin of this gap is the breaking of sublattice symmetry owing to the graphene-substrate interaction. We believe our results highlight a promising direction for band gap engineering of graphene.

1,625 citations


Journal ArticleDOI
TL;DR: In this paper, the authors address the nature of these height fluctuations by means of straightforward atomistic Monte Carlo simulations based on a very accurate many-body interatomic potential for carbon and find that ripples spontaneously appear due to thermal fluctuations with a size distribution peaked around 70 \AA which is compatible with experimental findings (50-100 \AA) but not with the current understanding of flexible membranes.
Abstract: The stability of two-dimensional (2D) layers and membranes is subject of a long standing theoretical debate. According to the so called Mermin-Wagner theorem, long wavelength fluctuations destroy the long-range order for 2D crystals. Similarly, 2D membranes embedded in a 3D space have a tendency to be crumpled. These dangerous fluctuations can, however, be suppressed by anharmonic coupling between bending and stretching modes making that a two-dimensional membrane can exist but should present strong height fluctuations. The discovery of graphene, the first truly 2D crystal and the recent experimental observation of ripples in freely hanging graphene makes these issues especially important. Beside the academic interest, understanding the mechanisms of stability of graphene is crucial for understanding electronic transport in this material that is attracting so much interest for its unusual Dirac spectrum and electronic properties. Here we address the nature of these height fluctuations by means of straightforward atomistic Monte Carlo simulations based on a very accurate many-body interatomic potential for carbon. We find that ripples spontaneously appear due to thermal fluctuations with a size distribution peaked around 70 \AA which is compatible with experimental findings (50-100 \AA) but not with the current understanding of stability of flexible membranes. This unexpected result seems to be due to the multiplicity of chemical bonding in carbon.

1,367 citations


Journal ArticleDOI
TL;DR: In this paper, strong variations in the Raman spectra for different single-layer graphene samples obtained by micromechanical cleavage are reported, revealing the presence of excess charges, even in the absence of intentional doping.
Abstract: We report strong variations in the Raman spectra for different single-layer graphene samples obtained by micromechanical cleavage, which reveals the presence of excess charges, even in the absence of intentional doping. Doping concentrations up to ~10^13 cm-2 are estimated from the G peak shift and width, and the variation of both position and relative intensity of the second order 2D peak. Asymmetric G peaks indicate charge inhomogeneity on the scale of less than 1 micron.

783 citations


Journal ArticleDOI
TL;DR: Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role as mentioned in this paper, and is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin or magnetism.
Abstract: Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin or magnetism This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin injection, Silsbee-Johnson spin-charge coupling, and spindependent tunneling, as well as spin relaxation and spin dynamics The most fundamental spin-dependent nteraction in nonmagnetic semiconductors is spin-orbit coupling Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief reviews of relevant recent achievements in the field

614 citations


Journal ArticleDOI
TL;DR: It is demonstrated that the printing approach enables large-scale integration of NW arrays for various device structures on both rigid silicon and flexible plastic substrates, with a controlled semiconductor channel width ranging from a single NW up to approximately 250 microm.
Abstract: Controlled and uniform assembly of "bottom-up" nanowire (NW) materials with high scalability has been one of the significant bottleneck challenges facing the potential integration of nanowires for both nano and macro electronic circuit applications. Many efforts have focused on tackling this challenge, and while significant progress has been made, still most presented approaches lack either the desired controllability in the positioning of nanowires or the needed uniformity over large scales. Here, we demonstrate wafer-scale assembly of highly ordered, dense, and regular arrays of NWs with high uniformity and reproducibility through a simple contact printing process. We demonstrate contact printing as a versatile strategy for direct transfer and controlled positioning of various NW materials into complex structural configurations on substrates. The assembled NW pitch is shown to be readily modulated through the surface chemical treatment of the receiver substrate, with the highest density approaching ~8 NW/um, ~95% directional alignment and wafer-scale uniformity. Furthermore, we demonstrate that our printing approach enables large-scale integration of NW arrays for various device structures on both Si and plastic substrates, with a controlled semiconductor channel width, and therefore ON current, ranging from a single NW (~10 nm) and up to ~250 um, consisting of a parallel array of over 1,250 NWs.

467 citations


Journal ArticleDOI
TL;DR: It is found that oxygen-containing edge groups have a minor effect on the energy difference between the antiferromagnetic ground state and the above-lying ferromagnetic state.
Abstract: We present a novel comprehensive first-principles theoretical study of the electronic properties and relative stabilities of edge-oxidized zigzag graphene nanoribbons. The oxidation schemes considered include hydroxyl, carboxyl, ether, and ketone groups. Using screened exchange density functional theory, we show that these oxidized ribbons are more stable than hydrogen-terminated nanoribbons except for the case of the etheric groups. The stable oxidized configurations maintain a spin-polarized ground state with antiferromagnetic ordering localized at the edges, similar to the fully hydrogenated counterparts. More important, edge oxidation is found to lower the onset electric field required to induce half-metallic behavior and extend the overall field range at which the systems remain half-metallic. Once the half-metallic state is reached, further increase of the external electric field intensity produces a rapid decrease in the spin magnetization up to a point where the magnetization is quenched completely. Finally, we find that oxygen containing edge groups have a minor effect on the energy difference between the antiferromagnetic ground state and the above-lying ferromagnetic state.

445 citations


Journal ArticleDOI
TL;DR: In this article, the authors measured carrier relaxation times in epitaxial graphene layers grown on SiC wafers and found that an initial fast relaxation transient in the 70-120 fs range is followed by a slower relaxation process in the 0.4-1.7 ps range.
Abstract: Using ultrafast optical pump-probe spectroscopy, we have measured carrier relaxation times in epitaxial graphene layers grown on SiC wafers. We find two distinct time scales associated with the relaxation of nonequilibrium photogenerated carriers. An initial fast relaxation transient in the 70-120 fs range is followed by a slower relaxation process in the 0.4-1.7 ps range. The slower relaxation time is found to be inversely proportional to the degree of crystalline disorder in the graphene layers as measured by Raman spectroscopy. We relate the measured fast and slow time constants to carrier-carrier and carrier-phonon intraband and interband scattering processes in graphene.

413 citations


Journal ArticleDOI
TL;DR: In this article, the authors demonstrate the electrical switching of the core magnetisation by utilizing the current-driven resonant dynamics of the vortex; the core switching is triggered by a strong dynamic field which is produced locally by a rotational core motion at a high speed of several hundred m/s.
Abstract: A magnetic vortex is a curling magnetic structure realized in a ferromagnetic disk, which is a promising candidate of a memory cell for future nonvolatile data storage devices. Thus, understanding of the stability and dynamical behaviour of the magnetic vortex is a major requirement for developing magnetic data storage technology. Since the experimental proof of the existence of a nanometre-scale core with out-of-plane magnetisation in the magnetic vortex, the dynamics of a vortex has been investigated intensively. However, the way to electrically control the core magnetisation, which is a key for constructing a vortex core memory, has been lacking. Here, we demonstrate the electrical switching of the core magnetisation by utilizing the current-driven resonant dynamics of the vortex; the core switching is triggered by a strong dynamic field which is produced locally by a rotational core motion at a high speed of several hundred m/s. Efficient switching of the vortex core without magnetic field application is achieved thanks to resonance. This opens up the potentiality of a simple magnetic disk as a building block for spintronic devices like a memory cell where the bit data is stored as the direction of the nanometre-scale core magnetisation.

373 citations


Journal ArticleDOI
TL;DR: In this paper, the authors measured conductance distribution for single molecule benzenediamine-gold junctions, based on 59,000 individual conductance traces recorded while breaking a gold point contact in solution, has a clear peak at 0.0064 G$_{0}$ with a width of 40%.
Abstract: The measured conductance distribution for single molecule benzenediamine-gold junctions, based on 59,000 individual conductance traces recorded while breaking a gold point contact in solution, has a clear peak at 0.0064 G$_{0}$ with a width of $\pm$ 40%. Conductance calculations based on density functional theory (DFT) for 15 distinct junction geometries show a similar spread. Differences in local structure have a limited influence on conductance because the amine-Au bonding motif is well-defined and flexible. The average calculated conductance (0.046 G$_{0}$) is seven times larger than experiment, suggesting the importance of many-electron corrections beyond DFT.

358 citations


Journal ArticleDOI
TL;DR: Here, a Langmuir−Blodgett (LB) method is developed achieving monolayers of aligned SWNTs with dense packing, central to which is a noncovalent polymer functionalization by poly(m-phenylenevinylene-co-2,5-dioctoxy-p-phenenevinylene) (PmPV) imparting high solubility and stability ofSWNTs in an organic solvent 1,2-dichlor
Abstract: Single walled carbon nanotubes exhibit advanced electrical and surface properties useful for high performance nanoelectronics. Important to future manufacturing of nanotube circuits is large scale assembly of SWNTs into aligned forms. Despite progress in assembly and oriented synthesis, pristine SWNTs in aligned and close-packed form remain elusive and needed for high current, speed and density devices through collective operations of parallel SWNTs. Here, we develop a Langmuir Blodgett method achieving monolayers of aligned SWNTs with dense packing, central to which is a non covalent polymer functionalization by PmPV imparting high solubility and stability of SWNTs in an organic solvent DCE. Pressure cycling or annealing during LB film compression reduces hysteresis and facilitates high degree alignment and packing of SWNTs characterized by microscopy and polarized Raman spectroscopy. The monolayer SWNTs are readily patterned for device integration by microfabrication, enabling the highest currents 3mA through the narrowest regions packed with aligned SWNTs thus far.

337 citations


Journal ArticleDOI
TL;DR: In this article, an exact solution for the electromagnetic field due to an electric current in the presence of a surface conductivity model of graphene is obtained in terms of dyadic Green's functions represented as Sommerfeld integrals.
Abstract: An exact solution is obtained for the electromagnetic field due to an electric current in the presence of a surface conductivity model of graphene. The graphene is represented by an infinitesimally-thin, local and isotropic two-sided conductivity surface. The field is obtained in terms of dyadic Green's functions represented as Sommerfeld integrals. The solution of plane-wave reflection and transmission is presented, and surface wave propagation along graphene is studied via the poles of the Sommerfeld integrals. For isolated graphene characterized by complex surface conductivity, a proper transverse-electric (TE) surface wave exists if and only if the imaginary part of conductivity is positive (associated with interband conductivity), and a proper transverse-magnetic (TM) surface wave exists when the imaginary part of conductivity is negative (associated with intraband conductivity). By tuning the chemical potential at infrared frequencies, the sign of the imaginary part of conductivity can be varied, allowing for some control over surface wave properties.

Journal ArticleDOI
TL;DR: In this paper, the authors perform ab-initio molecular dynamics simulations aiming at shading light onto the structure of amorphous Ge2Sb2Te5 (GST), the prototypical material in this class.
Abstract: Chalcogenide alloys are materials of interest for optical recording and non-volatile memories. We perform ab-initio molecular dynamics simulations aiming at shading light onto the structure of amorphous Ge2Sb2Te5 (GST), the prototypical material in this class. First principles simulations show that amorphous GST obtained by quenching from the liquid phase displays two types of short range order. One third of Ge atoms are in a tetrahedral environment while the remaining Ge, Sb and Te atoms display a defective octahedral environment, reminiscent of cubic crystalline GST.

Journal ArticleDOI
TL;DR: A remarkably high saturation magnetization of ~0.4mu_B/Fe along with room temperature ferromagnetic hysteresis loop has been observed in nanoscale (4-40 nm) multiferroic BiFeO_3 which in bulk form exhibits weak magnetization and an antiferromagnetic order as mentioned in this paper.
Abstract: A remarkably high saturation magnetization of ~0.4mu_B/Fe along with room temperature ferromagnetic hysteresis loop has been observed in nanoscale (4-40 nm) multiferroic BiFeO_3 which in bulk form exhibits weak magnetization (~0.02mu_B/Fe) and an antiferromagnetic order. The magnetic hysteresis loops, however, exhibit exchange bias as well as vertical asymmetry which could be because of spin pinning at the boundaries between ferromagnetic and antiferromagnetic domains. Interestingly, like in bulk BiFeO_3, both the calorimetric and dielectric permittivity data in nanoscale BiFeO_3 exhibit characteristic features at the magnetic transition point. These features establish formation of a true ferromagnetic-ferroelectric system with a coupling between the respective order parameters in nanoscale BiFeO_3.

Posted Content
TL;DR: In this article, the enhancement of ferromagnetism in pure ZnO upon thermal annealing with the ferromagnetic transition temperature Tc above room temperature has been reported.
Abstract: We report here enhancement of ferromagnetism in pure ZnO upon thermal annealing with the ferromagnetic transition temperature Tc above room temperature. We observe a finite coercive field upto 300K and a finite thermoremanent magnetization upto 340K for the annealed sample. We propose that magnetic moments can form at anionic vacancy clusters. Ferromagnetism can occur due to either superexchange between vacancy clusters via isolated F+ centers, or through a limited electron delocalization between vacancy clusters. Isolated vacancy clusters or isolated F+ centers give rise to a strong paramagnetic like behaviour below 10K.

Journal ArticleDOI
TL;DR: In this article, II-oxide and III-nitride semiconductors doped by non-magnetic 2p light elements are investigated as potential dilute magnetic semiconductor (DMS) materials.
Abstract: II-oxide and III-nitride semiconductors doped by nonmagnetic 2p light elements are investigated as potential dilute magnetic semiconductors (DMS). Based on our first-principle calculations, nitrogen doped ZnO, carbon doped ZnO, and carbon doped AlN are predicted to be ferromagnetic. The ferromagnetism of such DMS materials can be attributed to a p-d exchange-like p-p coupling interaction which is derived from the similar symmetry and wave function between the impurity (p-like t_2) and valence (p) states. We also propose a co-doping mechanism, using beryllium and nitrogen as dopants in ZnO, to enhance the ferromagnetic coupling and to increase the solubility and activity.

Posted Content
TL;DR: In this article, the structural, chemical and optical properties of ZnO samples were studied by using x-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive xray (EDX) analysis, Fourier transform infrared (FTIR) spectroscopy and UV-VIS spectrography.
Abstract: Undoped and Mn doped ZnO samples with different percentage of Mn content (1 mol%, 2 mol% and 3mol%) were synthesized by a simple solvo-thermal method. We have studied the structural, chemical and optical properties of the samples by using x-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive x-ray (EDX) analysis, Fourier transform infrared (FTIR) spectroscopy and UV-VIS spectroscopy. The XRD spectra show that all the samples are hexagonal wurtzite structures. The lattice parameters calculated for the Mn doped ZnO from the XRD pattern were found to be slightly larger than those of the undoped ZnO, which indicates substitution of Mn in ZnO lattice. SEM photograph shows the grain size of undoped ZnO is bigger than the Mn doped ZnO indicating hindrance of grain growth upon Mn doping. As the Mn doping increases the optical band gap decreases for the range of Mn doping reported here.

Journal ArticleDOI
TL;DR: In this article, the most important results on oxide spintronics, emphasizing materials physics as well as spin-dependent transport phenomena, and finally give some perspectives on how the flurry of new magnetic oxides could be useful for next-generation spintronic devices.
Abstract: Concomitant with the development of metal-based spintronics in the late 1980's and 1990's, important advances were made on the growth of high-quality oxide thin films and heterostructures While this was at first motivated by the discovery of high-temperature superconductivity in perovskite Cu oxides, this technological breakthrough was soon applied to other transition metal oxides, and notably mixed-valence manganites The discovery of colossal magnetoresistance in manganite films triggered an intense research activity on these materials, but the first notable impact of magnetic oxides in the field of spintronics was the use of such manganites as electrodes in magnetic tunnel junctions, yielding tunnel magnetoresistance ratios one order of magnitude larger than what had been obtained with transition metal electrodes Since then, the research on oxide spintronics has been intense with the latest developments focused on diluted magnetic oxides and more recently on multiferroics In this paper, we will review the most important results on oxide spintronics, emphasizing materials physics as well as spin-dependent transport phenomena, and finally give some perspectives on how the flurry of new magnetic oxides could be useful for next-generation spintronics devices

Posted Content
TL;DR: It is demonstrated that a new, bimetallic FeRu catalyst affords SWNT growth with narrow diameter and chirality distribution in methane CVD, and it is shown that narrow diameter/chirality growth combined with chemical separation by ion exchange chromatography (IEC) greatly facilitates achieving single (m,n) SWNT samples.
Abstract: Single-walled carbon nanotubes (SWNTs) are potential materials for future nanoelectronics. Since the electronic and optical properties of SWNTs strongly depend on tube diameter and chirality, obtaining SWNTs with narrow (n,m) chirality distribution by selective growth or chemical separation has been an active area of research. Here, we demonstrate that a new, bimetallic FeRu catalyst affords SWNT growth with narrow diameter and chirality distribution in methane CVD. At 600C, methane CVD on FeRu catalyst produced predominantly (6,5) SWNTs according to Uv-vis-NIR absorption and photoluminescence excitation/emission (PLE) spectroscopic characterization. At 850C, the dominant semiconducting species produced are (8,4), (7,6) and (7,5) SWNTs, with much narrower distributions in diameter and chirality than materials grown by other catalysts. Further, we show that narrow-diameter/chirality growth combined with chemical separation by ion exchange chromatography (IEC) greatly facilitate achieving single-(m,n) SWNT samples, as demonstrated by obtaining highly enriched (8,4) SWNTs with near elimination of metallic SWNTs existing in the as-grown material.

Journal ArticleDOI
TL;DR: In this article, the authors report on organic field effect transistors with unprecedented resistance against gate bias stress and show that there is no conceptual limitation for the stability of organic semiconductors in contrast to hydrogenated amorphous silicon.
Abstract: We report on organic field-effect transistors with unprecedented resistance against gate bias stress. The single crystal and thin-film transistors employ the organic gate dielectric Cytop(TM). This fluoropolymer is highly water repellent and shows a remarkable electrical breakdown strength. The single crystal transistors are consistently of very high electrical quality: near zero onset, very steep subthreshold swing (average: 1.3 nF V/(dec cm2)) and negligible current hysteresis. Furthermore, extended gate bias stress only leads to marginal changes in the transfer characteristics. It appears that there is no conceptual limitation for the stability of organic semiconductors in contrast to hydrogenated amorphous silicon.

Journal ArticleDOI
TL;DR: In this article, the room temperature Raman signatures from graphene layers on sapphire and glass substrates were compared with those from graphene on GaAs substrate and on the standard Si/SiO2 substrate, which served as a reference.
Abstract: The room-temperature Raman signatures from graphene layers on sapphire and glass substrates were compared with those from graphene on GaAs substrate and on the standard Si/SiO2 substrate, which served as a reference. It was found that while G peak of graphene on Si/SiO2 and GaAs is positioned at 1580 cm -1 it is down-shifted by ~5 cm -1 for graphene-on-sapphire (GOS) and, in many cases, splits into doublets for graphene-on-glass (GOG) with the central frequency around 1580 cm -1 . The obtained results are important for graphene characterization and its proposed graphene applications in electronic devices.

Journal ArticleDOI
TL;DR: In this paper, the authors pin down the origin of the coexistence of the large thermopower and the large conductivity in Na$_x$CoO$_2.
Abstract: In the present study, we pin down the origin of the coexistence of the large thermopower and the large conductivity in Na$_x$CoO$_2$. It is revealed that not just the density of states (DOS), the effective mass, nor the band width, but the peculiar {\it shape} of the $a_{1g}$ band referred to as the "pudding mold" type, which consists of a dispersive portion and a somewhat flat portion, is playing an important role in this phenomenon. The present study provides a new guiding principle for designing good thermoelectric materials.

Journal ArticleDOI
TL;DR: The thermal conductivity of silicon nanowires (SiNWs) is investigated by molecular dynamics (MD) simulation and it is found that the thermal Conductivity of SiNWs can be reduced exponentially by isotopic defects at room temperature.
Abstract: The thermal conductivity of silicon nanowires (SiNWs) is investigated by molecular dynamics (MD) simulation. It is found that the thermal conductivity of SiNWs can be reduced exponentially by isotopic defects at room temperature. The thermal conductivity reaches the minimum, which is about 27% of that of pure 28Si NW, when doped with fifty percent isotope atoms. The thermal conductivity of isotopic-superlattice structured SiNWs depends clearly on the period of superlattice. At a critical period of 1.09 nm, the thermal conductivity is only 25% of the value of pure Si NW. An anomalous enhancement of thermal conductivity is observed when the superlattice period is smaller than this critical length. The ultra-low thermal conductivity of superlattice structured SiNWs is explained with phonon spectrum theory.

Journal ArticleDOI
TL;DR: In this paper, the ability of several density-functional theory (DFT) exchange-correlation functionals to describe hydrogen bonds in small water clusters (dimer to pentamer) in their global minimum energy structures is evaluated with reference to second order Moeller Plesset perturbation theory (MP2).
Abstract: The ability of several density-functional theory (DFT) exchange-correlation functionals to describe hydrogen bonds in small water clusters (dimer to pentamer) in their global minimum energy structures is evaluated with reference to second order Moeller Plesset perturbation theory (MP2). Errors from basis set incompleteness have been minimized in both the MP2 reference data and the DFT calculations, thus enabling a consistent systematic evaluation of the true performance of the tested functionals. Among all the functionals considered, the hybrid X3LYP and PBE0 functionals offer the best performance and among the non-hybrid GGA functionals mPWLYP and PBE1W perform the best. The popular BLYP and B3LYP functionals consistently underbind and PBE and PW91 display rather variable performance with cluster size.

Journal ArticleDOI
TL;DR: In this article, fabrication and optical characterization of high quality photonic crystal (PC) microcavities based on nanocrystalline diamond was reported. But the results of the characterization were limited to three-dimensional Finite Difference Difference Time Domain (FDTD) simulations.
Abstract: Diamond-based photonic devices offer exceptional opportunity to study cavity QED at room temperature. Here we report fabrication and optical characterization of high quality photonic crystal (PC) microcavities based on nanocrystalline diamond. Fundamental modes near the emission wavelength of negatively charged nitrogen-vacancy (N-V) centers (637 nm) with quality factors (Qs) as high as 585 were observed. Three-dimensional Finite-Difference Time-Domain (FDTD) simulations were carried out and had excellent agreement with experimental results in the values of the mode frequencies. Polarization measurements of the modes were characterized; their anomalous behavior provides important insights to scattering loss in these structures.

Journal ArticleDOI
TL;DR: In this article, the importance of a high shear coefficient d15 (or d24) to the piezoelectric properties of domain-engineered and polycrystalline ferroelectrics is discussed.
Abstract: The importance of a high shear coefficient d15 (or d24) to the piezoelectric properties of domain-engineered and polycrystalline ferroelectrics is discussed. The extent of polarization rotation, as a mechanism of piezoelectric response, is directly correlated to the shear coefficient. The terms "rotator" and "extender" are introduced to distinguish the contrasting behaviors of crystals such as 4mm BaTiO3 and PbTiO3. In "rotator" ferroelectrics, where d15 is high relative to the longitudinal coefficient d33, polarization rotation is the dominant mechanism of piezoelectric response; the maximum longitudinal piezoelectric response is found away from the polar axis. In "extender" ferroelectrics, d15 is low and the collinear effect dominates; the maximum piezoelectric response is found along the polar axis. A variety of 3m, mm2 and 4mm ferroelectrics, with various crystal structures based on oxygen octahedra, are classified in this way. It is shown that the largest piezoelectric anisotropies d15/d33 are always found in 3m crystals; this is a result of the intrinsic electrostrictive anisotropy of the constituent oxygen octahedra. Finally, for a given symmetry, the piezoelectric anisotropy increases close to ferroelectric-ferroelectric phase transitions; this includes morphotropic phase boundaries and temperature induced polymorphic transitions.

Posted Content
TL;DR: A theory for the vibrational dynamics in disordered solids based on the random spatial variation of the shear modulus is applied to determine the wave vector dependence of the Brillouin peak position and width, and a quantitative relation between the boson peak and Gamma(k), two quantities that were not considered related before.
Abstract: A theory for the vibrational dynamics in disordered solids [W. Schirmacher, Europhys. Lett. {\bf 73}, 892 (2006)], based on the random spatial variation of the shear modulus, has been applied to determine the wavevector ($k$) dependence of the Brillouin peak position ($\Omega_k)$ and width ($\Gamma_k$), as well as the density of vibrational states ($g(\omega)$), in disordered systems. As a result, we give a firm theoretical ground to the ubiquitous $k^2$ dependence of $\Gamma_k$ observed in glasses. Moreover, we derive a quantitative relation between the excess of the density of states (the boson peak) and $\Gamma_k$, two quantities that were not considered related before. The successful comparison of this relation with the outcome of experiments and numerical simulations gives further support to the theory.

Journal ArticleDOI
TL;DR: In this article, the authors substitute Ni with Fe and Co in this alloy, each in amounts of 1 at% and 3 at% to perturb the electronic concentration and examine the resulting changes in the magnetocaloric properties.
Abstract: At certain compositions Ni-Mn-$X$ Heusler alloys ($X$: group IIIA-VA elements) undergo martensitic transformations, and many of them exhibit inverse magnetocaloric effects. In alloys where $X$ is Sn, the isothermal entropy change is largest among the Heusler alloys, particularly in Ni$_{50}$Mn$_{37}$Sn$_{13}$ where it reaches a value of 20 Jkg$^{-1}$K$^{-1}$ for a field of 5T. We substitute Ni with Fe and Co in this alloy, each in amounts of 1 at% and 3 at% to perturb the electronic concentration and examine the resulting changes in the magnetocaloric properties. Increasing both Fe and Co concentrations causes the martensitic transition temperature to decrease, whereby the substitution by Co at both compositions or substituting 1 at% Fe leads to a decrease in the magnetocaloric effect. On the other hand, the magnetocaloric effect in the alloy with 3 at% Fe leads to an increase in the value of the entropy change to about 30 Jkg$^{-1}$K$^{-1}$ at 5T.

Journal ArticleDOI
TL;DR: In this article, the structure and magnetism of single-phase BiFeO3 thin films were studied by means of reciprocal space mapping, Raman spectroscopy and neutron diffraction.
Abstract: A previous study of the growth conditions has shown that single-phase BiFeO3 thin films can only be obtained in a narrow pressure-temperature window and that these films display a weak magnetic moment. Here we study in more detail the structure and the magnetism of single-phase BiFeO3 films by means of reciprocal space mapping, Raman spectroscopy and neutron diffraction. X-ray and Raman data suggest that the BiFeO3 structure is tetragonal for 70 nm-thick films and changes to monoclinic for 240 nm-thick films, thus remaining different from that of the bulk (rhombohedral) structure. In the 240 nm monoclinically distorted film neutron diffraction experiments allow the observation of a G-type antiferromagnetic order as in bulk single crystals. However, the satellite peaks associated with the long-wavelength cycloid present in bulk BiFeO3 are not observed. The relevance of these findings for the exploitation of the magnetoelectric properties of BiFeO3 is discussed.

Journal ArticleDOI
TL;DR: Potfit as mentioned in this paper generates an effective atomic interaction potential by matching it to a set of reference data computed in first-principles calculations, thus allowing to perform large-scale atomistic simulations of materials with physically justified potentials.
Abstract: We present a program called potfit which generates an effective atomic interaction potential by matching it to a set of reference data computed in first-principles calculations. It thus allows to perform large-scale atomistic simulations of materials with physically justified potentials. We describe the fundamental principles behind the program, emphasizing its flexibility in adapting to different systems and potential models, while also discussing its limitations. The program has been used successfully in creating effective potentials for a number of complex intermetallic alloys, notably quasicrystals.

Journal ArticleDOI
TL;DR: The findings highlight a strong dependence of NV incorporation on crystal size, particularly with crystals less than 50 nm in size, with single optically active nitrogen-vacancy center incorporation.
Abstract: Nanodiamond crystals containing single color centers have been grown by chemical vapor deposition (CVD). The fluorescence from individual crystallites was directly correlated with crystallite size using a combined atomic force and scanning confocal fluorescence microscope. Under the conditions employed, the optimal size for single optically active nitrogen-vacancy (NV) center incorporation was measured to be 60 to 70 nm. The findings highlight a strong dependence of NV incorporation on crystal size, particularly with crystals less than 50 nm in size.