Showing papers in "arXiv: Mesoscale and Nanoscale Physics in 2018"

Tuning superconductivity in twisted bilayer graphene

Abstract: Materials with flat electronic bands often exhibit exotic quantum phenomena owing to strong correlations. Remarkably, an isolated low-energy flat band can be induced in bilayer graphene by simply rotating the layers to 1.1$^{\circ}$, resulting in the appearance of gate-tunable superconducting and correlated insulating phases. Here, we demonstrate that in addition to the twist angle, the interlayer coupling can also be modified to precisely tune these phases. We establish the capability to induce superconductivity at a twist angle larger than 1.1$^{\circ}$ $-$ in which correlated phases are otherwise absent $-$ by varying the interlayer spacing with hydrostatic pressure. Realizing devices with low disorder additionally reveals new details about the superconducting phase diagram and its relationship to the nearby insulator. Our results demonstrate twisted bilayer graphene to be a uniquely tunable platform for exploring novel correlated states.

Electrical Control of 2D Magnetism in Bilayer CrI3

Abstract: The challenge of controlling magnetism using electric fields raises fundamental questions and addresses technological needs such as low-dissipation magnetic memory. The recently reported two-dimensional (2D) magnets provide a new system for studying this problem owing to their unique magnetic properties. For instance, bilayer chromium triiodide (CrI3) behaves as a layered antiferromagnet with a magnetic field-driven metamagnetic transition. Here, we demonstrate electrostatic gate control of magnetism in CrI3 bilayers, probed by magneto-optical Kerr effect (MOKE) microscopy. At fixed magnetic fields near the metamagnetic transition, we realize voltage-controlled switching between antiferromagnetic and ferromagnetic states. At zero magnetic field, we demonstrate a time-reversal pair of layered antiferromagnetic states which exhibit spin-layer locking, leading to a remarkable linear dependence of their MOKE signals on gate voltage with opposite slopes. Our results pave the way for exploring new magnetoelectric phenomena and van der Waals spintronics based on 2D materials.

Topological phases of non-Hermitian systems

Abstract: Recent experimental advances in controlling dissipation have brought about unprecedented flexibility in engineering non-Hermitian Hamiltonians in open classical and quantum systems. A particular interest centers on the topological properties of non-Hermitian systems, which exhibit unique phases with no Hermitian counterparts. However, no systematic understanding in analogy with the periodic table of topological insulators and superconductors has been achieved. In this paper, we develop a coherent framework of topological phases of non-Hermitian systems. After elucidating the physical meaning and the mathematical definition of non-Hermitian topological phases, we start with one-dimensional lattices, which exhibit topological phases with no Hermitian counterparts and are found to be characterized by an integer topological winding number even with no symmetry constraint, reminiscent of the quantum Hall insulator in Hermitian systems. A system with a nonzero winding number, which is experimentally measurable from the wave-packet dynamics, is shown to be robust against disorder, a phenomenon observed in the Hatano-Nelson model with asymmetric hopping amplitudes. We also unveil a novel bulk-edge correspondence that features an infinite number of (quasi-)edge modes. We then apply the K-theory to systematically classify all the non-Hermitian topological phases in the Altland-Zirnbauer classes in all dimensions. The obtained periodic table unifies time-reversal and particle-hole symmetries, leading to highly nontrivial predictions such as the absence of non-Hermitian topological phases in two dimensions. We provide concrete examples for all the nontrivial non-Hermitian AZ classes in zero and one dimensions. In particular, we identify a Z2 topological index for arbitrary quantum channels. Our work lays the cornerstone for a unified understanding of the role of topology in non-Hermitian systems.

Magic Angle Spectroscopy

Abstract: The electronic properties of heterostructures of atomically-thin van der Waals (vdW) crystals can be modified substantially by Moire superlattice potentials arising from an interlayer twist between crystals. Moire-tuning of the band structure has led to the recent discovery of superconductivity and correlated insulating phases in twisted bilayer graphene (TBLG) near the so-called "magic angle" of $\sim$1.1°, with a phase diagram reminiscent of high T$_c$ superconductors. However, lack of detailed understanding of the electronic spectrum and the atomic-scale influence of the Moire pattern has so far precluded a coherent theoretical understanding of the correlated states. Here, we directly map the atomic-scale structural and electronic properties of TBLG near the magic angle using scanning tunneling microscopy and spectroscopy (STM/STS). We observe two distinct van Hove singularities (vHs) in the LDOS which decrease in separation monotonically through 1.1° with the bandwidth (t) of each vHs minimized near the magic angle. When doped near half Moire band filling, the conduction vHs shifts to the Fermi level and an additional correlation-induced gap splits the vHs with a maximum size of 7.5 meV. We also find that three-fold (C$_3$) rotational symmetry of the LDOS is broken in doped TBLG with a maximum symmetry breaking observed for states near the Fermi level, suggestive of nematic electronic interactions. The main features of our doping and angle dependent spectroscopy are captured by a tight-binding model with on-site (U) and nearest neighbor Coulomb interactions. We find that the ratio U/t is of order unity, indicating that electron correlations are significant in magic angle TBLG. Rather than a simple maximization of the DOS, superconductivity arises in TBLG at angles where the ratio U/t is largest, suggesting a pairing mechanism based on electron-electron interactions.

Moir\'e Excitons in Van der Waals Heterostructures

Abstract: In van der Waals (vdW) heterostructures formed by stacking two monolayer semiconductors, lattice mismatch or rotational misalignment introduces an in-plane moire superlattice. While it is widely recognized that a moire superlattice can modulate the electronic band structure and lead to novel transport properties including unconventional superconductivity and insulating behavior driven by correlations, its influence on optical properties has not been investigated experimentally. We present spectroscopic evidence that interlayer excitons are confined by the moire potential in a high-quality MoSe2/WSe2 heterobilayer with small rotational twist. A series of interlayer exciton resonances with either positive or negative circularly polarized emission is observed in photoluminescence, consistent with multiple exciton states confined within the moire potential. The recombination dynamics and temperature dependence of these interlayer exciton resonances are consistent with this interpretation. These results demonstrate the feasibility of engineering artificial excitonic crystals using vdW heterostructures for nanophotonics and quantum information applications.

Anomalously low dielectric constant of confined water

Abstract: The dielectric constant of interfacial water has been predicted to be smaller than that of bulk water (= 80) because the rotational freedom of water dipoles is expected to decrease near surfaces, yet experimental evidence is lacking. We report local capacitance measurements for water confined between two atomically-flat walls separated by various distances down to 1 nm. Our experiments reveal the presence of an interfacial layer with vanishingly small polarization such that its out-of-plane dielectric constant is only approximately 2. The electrically dead layer is found to be two to three molecules thick. These results provide much needed feedback for theories describing water-mediated surface interactions and behavior of interfacial water, and show a way to investigate the dielectric properties of other fluids and solids under extreme confinement.

Two-Dimensional Itinerant Ising Ferromagnetism in Atomically thin Fe3GeTe2

Abstract: Recent discoveries of intrinsic two-dimensional (2D) ferromagnetism in insulating/semiconducting van der Waals (vdW) crystals open up new possibilities for studying fundamental 2D magnetism and devices employing localized spins. However, a vdW material that exhibits 2D itinerant magnetism remains elusive. In fact, the synthesis of such single-crystal ferromagnetic metals with strong perpendicular anisotropy at the atomically thin limit has been a long-standing challenge. Here, we demonstrate that monolayer Fe3GeTe2 is a robust 2D itinerant ferromagnet with strong out-of-plane anisotropy. Layer-dependent studies reveal a crossover from 3D to 2D Ising ferromagnetism for thicknesses less than 4 nm (five layers), accompanying a fast drop of the Curie temperature from 207 K down to 130 K in the monolayer. For Fe3GeTe2 flakes thicker than ~15 nm, a peculiar magnetic behavior emerges within an intermediate temperature range, which we show is due to the formation of labyrinthine domain patterns. Our work introduces a novel atomically thin ferromagnetic metal that could be useful for the study of controllable 2D itinerant Ising ferromagnetism and for engineering spintronic vdW heterostructures.

Ultrastrong coupling between light and matter.

Abstract: Ultrastrong coupling between light and matter has, in the past decade, transitioned from theoretical idea to experimental reality. It is a new regime of quantum light-matter interaction, going beyond weak and strong coupling to make the coupling strength comparable to the transition frequencies in the system. The achievement of weak and strong coupling has led to increased control of quantum systems and applications like lasers, quantum sensing, and quantum information processing. Here we review the theory of quantum systems with ultrastrong coupling, which includes entangled ground states with virtual excitations, new avenues for nonlinear optics, and connections to several important physical models. We also review the multitude of experimental setups, including superconducting circuits, organic molecules, semiconductor polaritons, and optomechanics, that now have achieved ultrastrong coupling. We then discuss the many potential applications that these achievements enable in physics and chemistry.

Signatures of moir\'e-trapped valley excitons in MoSe$_2$/WSe$_2$ heterobilayers

Abstract: The creation of moire patterns in crystalline solids is a powerful approach to manipulate their electronic properties, which are fundamentally influenced by periodic potential landscapes. In 2D materials, a moire pattern with a superlattice potential can form by vertically stacking two layered materials with a twist and/or finite lattice constant difference. This unique approach has led to emergent electronic phenomena, including the fractal quantum Hall effect, tunable Mott insulators, and unconventional superconductivity. Furthermore, theory predicts intriguing effects on optical excitations by a moire potential in 2D valley semiconductors, but these signatures have yet to be experimentally detected. Here, we report experimental evidence of interlayer valley excitons trapped in a moire potential in MoSe$_2$/WSe$_2$ heterobilayers. At low temperatures, we observe photoluminescence near the free interlayer exciton energy but with over 100 times narrower linewidths. The emitter g-factors are homogeneous across the same sample and only take two values, -15.9 and 6.7, in samples with twisting angles near 60° and 0°, respectively. The g-factors match those of the free interlayer exciton, which is determined by one of two possible valley pairing configurations. At a twist angle near 20°, the emitters become two orders of magnitude dimmer, but remarkably, they possess the same g-factor as the heterobilayer near 60°. This is consistent with the Umklapp recombination of interlayer excitons near the commensurate 21.8° twist angle. The emitters exhibit strong circular polarization, which implies the preservation of three-fold rotation symmetry by the trapping potential. Together with the power and excitation energy dependence, all evidence points to their origin as interlayer excitons trapped in a smooth moire potential with inherited valley-contrasting physics.

Electric-field control of magnetism in few-layered van der Waals magnet

Abstract: Manipulating quantum state via electrostatic gating has been intriguing for many model systems in nanoelectronics. When it comes to the question of controlling the electron spins, more specifically, the magnetism of a system, tuning with electric field has been proven to be elusive. Recently, magnetic layered semiconductors have attracted much attention due to their emerging new physical phenomena. However, challenges still remain in the demonstration of a gate controllable magnetism based on them. Here, we show that, via ionic gating, strong field effect can be observed in few-layered semiconducting Cr$_{2}$Ge$_{2}$Te$_{6}$ devices. At different gate doping, micro-area Kerr measurements in the studied devices demonstrate tunable magnetization loops below the Curie temperature, which is tentatively attributed to the moment re-balance in the spin-polarized band structure. Our findings of electric-field controlled magnetism in van der Waals magnets pave the way for potential applications in new generation magnetic memory storage, sensors, and spintronics.

Observation of Moir\'e Excitons in WSe2/WS2 Heterostructure Superlattices

Abstract: Moir\'e superlattices provide a powerful tool to engineer novel quantum phenomena in two-dimensional (2D) heterostructures, where the interactions between the atomically thin layers qualitatively change the electronic band structure of the superlattice. For example, mini-Dirac points, tunable Mott insulator states, and the Hofstadter butterfly can emerge in different types of graphene/boron nitride moir\'e superlattices, while correlated insulating states and superconductivity have been reported in twisted bilayer graphene moir\'e superlattices. In addition to their dramatic effects on the single particle states, moir\'e superlattices were recently predicted to host novel excited states, such as moir\'e exciton bands. Here we report the first observation of moir\'e superlattice exciton states in nearly aligned WSe2/WS2 heterostructures. These moir\'e exciton states manifest as multiple emergent peaks around the original WSe2 A exciton resonance in the absorption spectra, and they exhibit gate dependences that are distinctly different from that of the A exciton in WSe2 monolayers and in large-twist-angle WSe2/WS2 heterostructures. The observed phenomena can be described by a theoretical model where the periodic moir\'e potential is much stronger than the exciton kinetic energy and creates multiple flat exciton minibands. The moir\'e exciton bands provide an attractive platform to explore and control novel excited state of matter, such as topological excitons and a correlated exciton Hubbard model, in transition metal dichalcogenides.

Giant Tunneling Magnetoresistance in Spin-Filter van der Waals Heterostructures

Abstract: Magnetic multilayer devices that exploit magnetoresistance are the backbone of magnetic sensing and data storage technologies. Here we report novel multiple-spin-filter magnetic tunnel junctions (sf-MTJs) based on van der Waals (vdW) heterostructures in which atomically thin chromium triiodide (CrI3) acts as a spin-filter tunnel barrier sandwiched between graphene contacts. We demonstrate tunneling magnetoresistance which is drastically enhanced with increasing CrI3 layer thickness, reaching a record 19,000% for magnetic multilayer structures using four-layer sf-MTJs at low temperatures. These devices also show multiple resistance states as a function of magnetic field, suggesting the potential for multi-bit functionalities using an individual vdW sf-MTJ. Using magnetic circular dichroism measurements, we attribute these effects to the intrinsic layer-by-layer antiferromagnetic ordering of the atomically thin CrI3. Our work reveals the possibility to push magnetic information storage to the atomically thin limit, and highlights CrI3 as a superlative magnetic tunnel barrier for vdW heterostructure spintronic devices.

Evidence of Gate-Tunable Mott Insulator in Trilayer Graphene-Boron Nitride Moir\'e Superlattice

Abstract: Mott insulator plays a central role in strongly correlated physics, where the repulsive Coulomb interaction dominates over the electron kinetic energy and leads to insulating states with one electron occupying each unit cell. Doped Mott insulator is often described by the Hubbard model3, which can give rise to other correlated phenomena such as unusual magnetism and even high-temperature superconductivity. A tunable Mott insulator, where the competition between the Coulomb interaction and the kinetic energy can be varied in situ, can provide an invaluable model system for the study of Mott physics. Here we report the realization of such a tunable Mott insulator in the ABC trilayer graphene (TLG) and hexagonal boron nitride (hBN) heterostructure with a moire superlattice. Unlike massless Dirac electrons in monolayer graphene, electrons in pristine ABC TLG are characterized by quartic energy dispersion and large effective mass that are conducive for strongly correlated phenomena. The moire superlattice in TLG/hBN heterostructures leads to narrow electronic minibands that are gate tunable. Each filled miniband contains 4 electrons in one moire lattice site due to the spin and valley degeneracy of graphene. The Mott insulator states emerge at 1/4 and 1/2 fillings, corresponding to one electron and two electrons per site, respectively. Moreover, the Mott states in the ABC TLG/hBN heterostructure exhibit unprecedented tunability: the Mott gap can be modulated in situ by a vertical electrical field, and at the meantime, the electron doping can be gate-tuned to fill the band from one Mott insulating state to another. Our observation of a tunable Mott insulator opens up exciting opportunities to explore novel strongly correlated phenomena in two-dimensional moire superlattice heterostructures.

Towards ideal topological materials: Comprehensive database searches using symmetry indicators

Abstract: Topological materials (TMs) showcase intriguing physical properties defying expectations based on conventional materials, and hold promise for the development of devices with new functionalities. While several theoretically proposed TMs have been experimentally confirmed, extensive experimental exploration of topological properties as well as applications in realistic devices have been held back due to the lack of excellent TMs in which interference from trivial Fermi surface states is minimized. We tackle this problem in the present work by applying our recently developed method of symmetry indicators to all non-magnetic compounds in the 230 space groups. An exhaustive database search reveals thousands of TM candidates. Of these, we highlight the excellent TMs, the 258 topological insulators and 165 topological crystalline insulators which have either noticeable full band gap or a considerable direct gap together with small trivial Fermi pockets. We also give a list of 489 topological semimetals with the band crossing points located near the Fermi level. All predictions obtained through standard generalized gradient approximation (GGA) calculations were cross-checked with the modified Becke-Johnson (MBJ) potential calculations, appropriate for narrow gap materials. With the electronic and optical behavior around the Fermi level dominated by the topologically non-trivial bands, these newly found TMs candidates open wide possibilities for realizing the promise of TMs in next-generation electronic devices.

Electric-field switching of two-dimensional van der Waals magnets

Abstract: Controlling magnetism by purely electrical means is a key challenge to better information technology1. A variety of material systems, including ferromagnetic (FM) metals2,3,4, FM semiconductors5, multiferroics6,7,8 and magnetoelectric (ME) materials9,10, have been explored for the electric-field control of magnetism. The recent discovery of two-dimensional (2D) van der Waals magnets11,12 has opened a new door for the electrical control of magnetism at the nanometre scale through a van der Waals heterostructure device platform13. Here we demonstrate the control of magnetism in bilayer CrI3, an antiferromagnetic (AFM) semiconductor in its ground state12, by the application of small gate voltages in field-effect devices and the detection of magnetization using magnetic circular dichroism (MCD) microscopy. The applied electric field creates an interlayer potential difference, which results in a large linear ME effect, whose sign depends on the interlayer AFM order. We also achieve a complete and reversible electrical switching between the interlayer AFM and FM states in the vicinity of the interlayer spin-flip transition. The effect originates from the electric-field dependence of the interlayer exchange bias.

Twistable electronics with dynamically rotatable heterostructures

Abstract: The electronic properties of two-dimensional materials and their heterostructures can be dramatically altered by varying the relative angle between the layers. This makes it theoretically possible to realize a new class of twistable electronics in which device properties can be manipulated on-demand by simply rotating the structure. Here, we demonstrate a new device architecture in which a layered heterostructure can be dynamically twisted, in situ. We study graphene encapsulated by boron nitride where at small rotation angles the device characteristics are dominated by coupling to a large wavelength Moire superlattice. The ability to investigate arbitrary rotation angle in a single device reveals new features in the optical, mechanical and electronic response in this system. Our results establish the capability to fabricate twistable electronic devices with dynamically tunable properties.

Artificial flat band systems: from lattice models to experiments

Abstract: Certain lattice wave systems in translationally invariant settings have one or more spectral bands that are strictly flat or independent of momentum in the tight binding approximation, arising from either internal symmetries or fine-tuned coupling. These flat bands display remarkable strongly-interacting phases of matter. Originally considered as a theoretical convenience useful for obtaining exact analytical solutions of ferromagnetism, flat bands have now been observed in a variety of settings, ranging from electronic systems to ultracold atomic gases and photonic devices. Here we review the design and implementation of flat bands and chart future directions of this exciting field.

Maximally-localized Wannier orbitals and the extended Hubbard model for the twisted bilayer graphene

Abstract: We develop an effective extended Hubbard model to describe the low-energy electronic properties of the twisted bilayer graphene. By using the Bloch states in the effective continuum model and with the aid of the maximally localized algorithm, we construct the Wannier orbitals and obtain an effective tight-binding model on the emergent honeycomb lattice. We found the Wannier state takes a peculiar three-peak form in which the amplitude maxima are located at the triangle corners surrounding the center. We estimate the direct Coulomb interaction and the exchange interaction between the Wannier states. At the filling of two electrons per super cell, in particular, we find an unexpected coincidence in the direct Coulomb energy between a charge-ordered state and a homogeneous state, which would possibly lead to an unconventional many-body state.

Symmetry and Topology in Non-Hermitian Physics

Abstract: We develop a complete theory of symmetry and topology in non-Hermitian physics. We demonstrate that non-Hermiticity ramifies the celebrated Altland-Zirnbauer symmetry classification for insulators and superconductors. In particular, charge conjugation is defined in terms of transposition rather than complex conjugation due to the lack of Hermiticity, and hence chiral symmetry becomes distinct from sublattice symmetry. It is also shown that non-Hermiticity enables a Hermitian-conjugate counterpart of the Altland-Zirnbauer symmetry. Taking into account sublattice symmetry or pseudo-Hermiticity as an additional symmetry, the total number of symmetry classes is 38 instead of 10, which describe intrinsic non-Hermitian topological phases as well as non-Hermitian random matrices. Furthermore, due to the complex nature of energy spectra, non-Hermitian systems feature two different types of complex-energy gaps, point-like and line-like vacant regions. On the basis of these concepts and K-theory, we complete classification of non-Hermitian topological phases in arbitrary dimensions and symmetry classes. Remarkably, non-Hermitian topology depends on the type of complex-energy gaps and multiple topological structures appear for each symmetry class and each spatial dimension, which are also illustrated in detail with concrete examples. Moreover, the bulk-boundary correspondence in non-Hermitian systems is elucidated within our framework, and symmetries preventing the non-Hermitian skin effect are identified. Our classification not only categorizes recently observed lasing and transport topological phenomena, but also predicts a new type of symmetry-protected topological lasers with lasing helical edge states and dissipative topological superconductors with nonorthogonal Majorana edge states. Furthermore, our theory provides topological classification of Hermitian and non-Hermitian free bosons.

Engineering of robust topological quantum phases in graphene nanoribbons

Abstract: Here we present a flexible strategy to realize robust nanomaterials exhibiting valence electronic structures whose fundamental physics is described by the SSH-Hamiltonian. These solid-state materials are realized using atomically precise graphene nanoribbons (GNR). We demonstrate the controlled periodic coupling of topological boundary states at junctions of armchair GNRs of different widths to create quasi-1D trivial and non-trivial electronic quantum phases. Their topological class is experimentally determined by drawing upon the bulk-boundary correspondence and measuring the presence (non-trivial) or absence (trivial) of localized end states by scanning tunneling spectroscopy (STS). The strategy we propose has the potential to tune the band width of the topological electronic bands close to the energy scale of proximity induced spin-orbit coupling or superconductivity, and may allow the realization of Kitaev like Hamiltonians and Majorana type end states.

Topological Sound

Abstract: Recently, we witnessed a tremendous effort to conquer the realm of acoustics as a possible playground to test with sound waves topologically protected wave propagation. Acoustics differ substantially from photonic and electronic systems since longitudinal sound waves lack intrinsic spin polarization and breaking the time-reversal symmetry requires additional complexities that both are essential in mimicking the quantum effects leading to topologically robust sound propagation. In this article, we review the latest efforts to explore with sound waves topological states of quantum matter in two- and three-dimensional systems where we discuss how spin and valley degrees of freedom appear as highly novel ingredients to tailor the flow of sound in the form of one-way edge modes and defect-immune protected acoustic waves. Both from a theoretical stand point and based on contemporary experimental verifications, we summarize the latest advancements of the flourishing research frontier on topological sound.

Observation of second-order topological insulators in sonic crystals

Abstract: Topological insulators with unique gapless edge states have revolutionized the understanding of electronic properties in solid materials. These gapless edge states are dictated by the topological invariants associated with the quantization of generalized Berry phases of the bulk energy bands through the bulk-edge correspondence, a paradigm that can also be extended to acoustic and photonic systems. Recently, high-order topological insulators (HOTIs) are proposed and observed, where the bulk topological invariants result in gapped edge states and in-gap corner or hinge states, going beyond the conventional bulk-edge correspondence. However, the existing studies on HOTIs are restricted to tight-binding models which cannot describe the energy bands of conventional sonic/photonic crystals that are due to multiple Bragg scatterings. Here, we report theoretical prediction and experimental observation of acoustic second-order topological insulators (SOTI) in two-dimensional (2D) sonic crystals (SCs) beyond the tight-binding picture. We observe gapped edge states and degenerate in-gap corner states which manifest bulk-edge correspondence in a hierarchy of dimensions. Moreover, topological transitions in both the bulk and edge states can be realized by tuning the angle of the meta-atoms in each unit-cell, leading to various conversion among bulk, edge and corner states. The emergent properties of the acoustic SOTIs open up a new route for topological designs of robust localized acoustic modes as well as topological transfer of acoustic energy between 2D, 1D and 0D modes.

The Computational 2D Materials Database: High-Throughput Modeling and Discovery of Atomically Thin Crystals

Abstract: We introduce the Computational 2D Materials Database (C2DB), which organises a variety of structural, thermodynamic, elastic, electronic, magnetic, and optical properties of around 1500 two-dimensional materials distributed over more than 30 different crystal structures. Material properties are systematically calculated by state-of-the art density functional theory and many-body perturbation theory (G$_0\!$W$\!_0$ and the Bethe-Salpeter Equation for $\sim$200 materials) following a semi-automated workflow for maximal consistency and transparency. The C2DB is fully open and can be browsed online or downloaded in its entirety. In this paper, we describe the workflow behind the database, present an overview of the properties and materials currently available, and explore trends and correlations in the data. Moreover, we identify a large number of new potentially synthesisable 2D materials with interesting properties targeting applications within spintronics, (opto-)electronics, and plasmonics. The C2DB offers a comprehensive and easily accessible overview of the rapidly expanding family of 2D materials and forms an ideal platform for computational modeling and design of new 2D materials and van der Waals heterostructures.

Topological Band Engineering of Graphene Nanoribbons

Abstract: Topological insulators (TIs) are an emerging class of materials that host highly robust in-gap surface/interface states while maintaining an insulating bulk. While most notable scientific advancements in this field have been focused on TIs and related topological crystalline insulators in 2D and 3D, more recent theoretical work has predicted the existence of 1D symmetry-protected topological phases in graphene nanoribbons (GNRs). The topological phase of these laterally-confined, semiconducting strips of graphene is determined by their width, edge shape, and the terminating unit cell, and is characterized by a Z2 invariant (similar to 1D solitonic systems). Interfaces between topologically distinct GNRs characterized by different Z2 are predicted to support half-filled in-gap localized electronic states which can, in principle, be utilized as a tool for material engineering. Here we present the rational design and experimental realization of a topologically-engineered GNR superlattice that hosts a 1D array of such states, thus generating otherwise inaccessible electronic structure. This strategy also enables new end states to be engineered directly into the termini of the 1D GNR superlattice. Atomically-precise topological GNR superlattices were synthesized from molecular precursors on a Au(111) surface under ultra-high vacuum (UHV) conditions and characterized by low temperature scanning tunneling microscopy (STM) and spectroscopy (STS). Our experimental results and first-principles calculations reveal that the frontier band structure of these GNR superlattices is defined purely by the coupling between adjacent topological interface states. This novel manifestation of 1D topological phases presents an entirely new route to band engineering in 1D materials based on precise control of their electronic topology, and is a promising platform for future studies of 1D quantum spin physics.

Memristor Crossbars with 4.5 Terabits-per-Inch-Square Density and Two Nanometer Dimension.

Abstract: Memristor is a promising building block for the next generation nonvolatile random access memory and bio-inspired computing systems. Organizing memristors into high density crossbar arrays, although challenging, is critical to meet the ever-growing high capacity and low energy demands of these applications especially in the big data era. Here, we construct memristor crossbars with a single-layer density up to 4.5 terabits per inch square, an order of magnitude denser than the state- of-the-art 64-layer triple level cell NAND flash technology. The memristors in the crossbars are 2 $\times$ 2 nm$^2$ in size, capable of switching with tens of nano ampere electric current. The densely packed memristor crossbars of extremely small working devices provides a power-efficient solution for high density information storage and processing.

Fidelity benchmarks for two-qubit gates in silicon

Abstract: Universal quantum computation will require qubit technology based on a scalable platform, together with quantum error correction protocols that place strict limits on the maximum infidelities for one- and two-qubit gate operations. While a variety of qubit systems have shown high fidelities at the one-qubit level, superconductor technologies have been the only solid-state qubits manufactured via standard lithographic techniques which have demonstrated two-qubit fidelities near the fault-tolerant threshold. Silicon-based quantum dot qubits are also amenable to large-scale manufacture and can achieve high single-qubit gate fidelities (exceeding 99.9%) using isotopically enriched silicon. However, while two-qubit gates have been demonstrated in silicon, it has not yet been possible to rigorously assess their fidelities using randomized benchmarking, since this requires sequences of significant numbers of qubit operations ($\gtrsim 20$) to be completed with non-vanishing fidelity. Here, for qubits encoded on the electron spin states of gate-defined quantum dots, we demonstrate Bell state tomography with fidelities ranging from 80% to 89%, and two-qubit randomized benchmarking with an average Clifford gate fidelity of 94.7% and average Controlled-ROT (CROT) fidelity of 98.0%. These fidelities are found to be limited by the relatively slow gate times employed here compared with the decoherence times $T_2^*$ of the qubits. Silicon qubit designs employing fast gate operations based on high Rabi frequencies, together with advanced pulsing techniques, should therefore enable significantly higher fidelities in the near future.

Gate-induced superconductivity in a monolayer topological insulator.

Abstract: The layered semimetal WTe_2 has recently been found to be a two-dimensional topological insulator (2D TI) when thinned down to a single monolayer, with conducting helical edge channels. We report here that intrinsic superconductivity can be induced in this monolayer 2D TI by mild electrostatic doping, at temperatures below 1 K. The 2D TI-superconductor transition can be easily driven by applying a just a small gate voltage. This discovery offers new possibilities for gate-controlled devices combining superconductivity and topology, and could provide a basis for quantum information schemes based on topological protection.

Electrically controlled long-distance spin transport through an antiferromagnetic insulator

Abstract: Spintronics uses spins, the intrinsic angular momentum of electrons, as an alternative for the electron charge. Its long-term goal is in the development of beyond-Moore low dissipation technology devices. Recent progress demonstrated the long-distance transport of spin signals across ferromagnetic insulators. Antiferromagnetically ordered materials are however the most common class of magnetic materials with several crucial advantages over ferromagnetic systems. In contrast to the latter, antiferromagnets exhibit no net magnetic moment, which renders them stable and impervious to external fields. In addition, they can be operated at THz frequencies. While fundamentally their properties bode well for spin transport, previous indirect observations indicate that spin transmission through antiferromagnets is limited to short distances of a few nanometers. Here we demonstrate the long-distance, over tens of micrometers, propagation of spin currents through hematite (\alpha-Fe2O3), the most common antiferromagnetic iron oxide, exploiting the spin Hall effect for spin injection. We control the spin current flow by the interfacial spin-bias and by tuning the antiferromagnetic resonance frequency with an external magnetic field. This simple antiferromagnetic insulator is shown to convey spin information parallel to the compensated moment (N\'eel order) over distances exceeding tens of micrometers. This newly-discovered mechanism transports spin as efficiently as the net magnetic moments in the best-suited complex ferromagnets. Our results pave the way to ultra-fast, low-power antiferromagnet-insulator-based spin-logic devices that operate at room temperature and in the absence of magnetic fields.

Corner states of light in photonic waveguides.

Abstract: The recently established paradigm of higher-order topological states of matter has shown that not only, as previously thought, edge and surface states but also states localised to corners can have robust and exotic properties. Here we report on the experimental realisation of novel corner states made out of classical light in three-dimensional photonic structures inscribed in glass samples using femtosecond (fs) laser technology. By creating and analysing waveguide arrays forming two-dimensional breathing kagome lattices in various sample geometries, we establish this as a platform for corner states exhibiting a remarkable degree of flexibility and control. In each sample geometry we measure eigenmodes that are localised at the corners in a finite frequency range in complete analogy with a theoretical model of the breathing kagome. Here, the measurements reveal that light can be "fractionalised", corresponding to simultaneous localisation to each corner of a triangular sample, even in the presence of defects. The fabrication method applied in this work exposes the advantage of using fs-laser writing for producing compact three-dimensional devices thus paving the way for technological applications by simulating novel higher-order states of matter.

Light-induced anomalous Hall effect in graphene

Abstract: Many striking non-equilibrium phenomena have been discovered or predicted in optically-driven quantum solids, ranging from light-induced superconductivity to Floquet-engineered topological phases. These effects are expected to lead to dramatic changes in electrical transport, but can only be comprehensively characterized or functionalized with a direct interface to electrical devices that operate at ultrafast speeds. Here, we make use of laser-triggered photoconductive switches to measure the ultrafast transport properties of monolayer graphene, driven by a mid-infrared femtosecond pulse of circularly polarized light. The goal of this experiment is to probe the transport signatures of a predicted light-induced topological band structure in graphene, similar to the one originally proposed by Haldane. We report the observation of an anomalous Hall effect in the absence of an applied magnetic field. We also extract quantitative properties of the non-equilibrium state. The dependence of the effect on a gate potential used to tune the Fermi level reveals multiple features that reflect the effective band structure expected from Floquet theory. This includes a ~60 meV wide conductance plateau centered at the Dirac point, where a gap of approximately equal magnitude is expected to open. We also find that when the Fermi level lies within this plateau, the estimated anomalous Hall conductance saturates around ~1.8$\pm$0.4 e$^2$/h.