Chinese Journal of Semiconductors 

About: Chinese Journal of Semiconductors is an academic journal. The journal publishes majorly in the area(s): Breakdown voltage & Voltage. Over the lifetime, 175 publications have been published receiving 452 citations.

Electronic Structure of Semiconductor Nanocrystals

Abstract: This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals,such as quantum dots and wires,which often contain tens of thousands of atoms.The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments.We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape.Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.

Optically Activated Charge Domain Model for High-Gain GaAs Photoconductive Switches

Abstract: A model for theoretical analysis of nonlinear (or high gain) mode of photoconductive semiconductor switches (PCSS's) is proposed.The switching transition of high gain PCSS's can be described with an optically activated charge domain. The switching characteristics including rise time,delay and their relationship to electric field strength,optical trigger energies are discussed.The formation and radiation transit,accumulation of the charge domain are related with the triggering and sustaining phases of PCSS's,respectively.The results of the mathematical model on this mechanism agree with experimental results.

Breakdown Voltage Analysis for a Double Step Buried Oxide SOI Structure

Abstract: A novel structure with a double step buried oxide SOI (D-SBOSOI) is developed on the basis of single step buried oxide structure.The relation of three times the vertical electric field between the silicon and buried oxide in conventional structure has been broken due to charge accumulation on the step buried oxide in D-SBOSOI,resulting in an electric field of 200V/μm in the buried oxide.Furthermore,the surface electric field in this structure reaches nearly ideal uniform distribution due to the additive electric field modulation by double step buried oxide.The results show that the breakdown voltage is increased because the vertical and lateral fields are optimized in this structure by virtue of 2D MEDICI simulation.

Breakdown Voltage Analysis of a REBULF LDMOS Structure with an n~+-Floating Layer*

Abstract: A novel REBULF (reduced bulk field) concept is proposed for the development of a smart power integrated circuit with a thin epitaxy layer,and a new REBULF LDMOS device structure is designed with an n+-floating layer embedded in the high-resistance substrate.The mechanism of the improved breakdown characteristics is that a high electric field around the drain is reduced by a n+-floating layer,which causes the redistribution of the bulk electric field in the drift region,and the substrate supports more biases.The critical condition of the REBULF,which is analyzed and validated by a 2D MEDICI simulator,is that the product of the location of the n+-floating layer and the substrate doping cannot exceed 1×1012cm-2. The breakdown voltage of the REBULF LDMOS is 75% greater than that of a RESURF LDMOS.

Transit Properties of High Power Ultra\|Fast Photoconductive Semiconductor Switch

Abstract: Experiments of a GaAs ultra\|fast Photo\|Conductive Semiconductor Switch (PCSS) are reported. Both the linear and nonlinear modes were observed when triggered by the μJ nano\|second laser. The peak current could be as high as 560A. The rise time of the current pulse responses is less than 200ps when triggered with 76MHz femto\|second laser.