Showing papers in "Chinese Physics B in 2019"

A theoretical study of a plasmonic sensor comprising a gold nano-disk array on gold film with a SiO 2 spacer

Abstract: A plasmonic refractive index (RI) sensor with high RI sensitivity based on a gold composite structure is proposed. This composite structure is constructed from a perfect gold nano-disk square array on a gold film, with a SiO2 spacer. The reflection spectra of the composite structure, with analyte RI in the range of 1.30 to 1.40, are theoretically studied using the finite-difference time-domain method. The incident light beam is partly coupled to the localized surface plasmons (LSP) of the single nano-disks and partly transferred to the propagating surface plasmons (PSP) by grating coupling. The reflectivity is nearly zero at the valley of the reflection spectrum because of the strong coupling between LSP and PSP. Also, the full width at half maximum (FWHM) of one of the surface plasmon polaritons (SPPs) modes is very narrow, which is helpful for RI sensing. An RI sensitivity as high as 853 nm/RIU is obtained. The influence of the structure parameters on the RI sensitivity and the sensor figure of merit (FOM) are investigated in detail. We find that the sensor maintains high RI sensitivity over a large range of periods and nano-disk diameters. Results of the theoretical simulation of the composite structure as a plasmonic sensor are promising. Thus, this composite structure could be extensively applied in the fields of biology and chemistry.

Stiefel-Whitney classes and topological phases in band theory

Abstract: In this article, we review the recent progress in the study of topological phases in systems with space-time inversion symmetry $I_{\text{ST}}$. $I_{\text{ST}}$ is an anti-unitary symmetry which is local in momentum space and satisfies $I_{\text{ST}}^2=1$ such as $PT$ or $C_{2}T$ symmetry where $P$, $T$, $C_2$ indicate inversion, time-reversal, and two-fold rotation symmetries, respectively. Under $I_{\text{ST}}$, the Hamiltonian and the Bloch wave function can be constrained to be real-valued, which makes the Berry curvature and the Chern number to vanish. In this class of systems, gapped band structures of real wave functions can be topologically distinguished by Stiefel-Whitney numbers instead. The first and second Stiefel-Whitney numbers $w_1$ and $w_2$, respectively, are the corresponding invariants in 1D and 2D, which are equivalent to the quantized Berry phase and the $Z_2$ monopole charge, respectively. We first describe the topological phases characterized by the first Stiefel-Whitney number, including 1D topological insulators with quantized charge polarization, 2D Dirac semimetals, and 3D nodal line semimetals. Next we review how the second Stiefel-Whitney class characterizes the 3D nodal line semimetals carrying a $Z_{2}$ monopole charge. In particular, we explain how the second Stiefel-Whitney number $w_2$, the $Z_{2}$ monopole charge, and the linking number between nodal lines are related. Finally, we review the properties of 2D and 3D topological insulators characterized by the nontrivial second Stiefel Whitney class.

Optoelectronic properties analysis of silicon light-emitting diode monolithically integrated in standard CMOS IC*

Abstract: Si junction diodes operating in the mode of avalanche breakdown are capable of emitting light in the visible range of 400–900 nm. In this study, to realize the switching speed in the GHz range, we present a transient model to shorten the carrier lifetime in the high electric field region by accumulating carriers in both p and n type regions. We also verify the optoelectronic characteristics by disclosing the related physical mechanisms behind the light emission phenomena. The emission of visible light by a monolithically integrated Si diode under the reverse bias is also discussed. The light is emitted as spatial sources by the defects located at the p–n junction of the reverse-biased diode. The influence of the defects on the electrical behavior is manifested as a current-dependent electroluminescence.

Topology of triple-point metals

Abstract: We discuss and illustrate the appearance of topological fermions and bosons in triple-point metals, where a band crossing of three electronic bands occurs close to the Fermi level. Topological bosons appear in the phonon spectrum of certain triple-point metals, depending on the mass of atoms that form the binary triple-point metal. We first provide a classification of possible triple-point electronic topological phases possible in crystalline compounds and discuss the consequences of these topological phases, seen in Fermi arcs, topological Lifshitz transitions and transport anomalies. Then we show how the topological phase of phonon modes can be extracted and proven for relevant compounds. Finally, we show how the interplay of electronic and phononic topologies in triple-point metals puts these \textit{metallic} materials into the list of the most efficient \textit{metallic} thermoelectrics known to date.

Flexible broadband polarization converter based on metasurface at microwave band

Abstract: A flexible broadband linear polarization converter is proposed based on the metasurface operating at microwave band. To achieve bandwidth extension property, long and short metallic arc wires, as well as the metallic disks placed over a ground plane, are combined into the polarizer, which can generate three neighboring resonances. Due to the combination of the first two resonances and the optimized size and thickness of the unit cell, the polarization converter can have a weak incident angle dependence. Both simulated and measured results confirm that the average polarization conversion ratio is over 85% from 11.3 GHz to 20.2 GHz within a broad range of incident angle from 0° to 45°. Moreover, the proposed polarization converter based on flexible substrates can be applied for conformal design. The simulation and experiment results demonstrate that our designed polarizer still keeps high polarization conversion efficiency, even when it adheres to convex cylindrical surfaces. The periodic metallic structure of the designed polarizer has great potential application values in the microwave, terahertz, and optic regimes.

Recent progress on the prediction of two-dimensional materials using CALYPSO

Abstract: In recent years, structure design and predictions based on global optimization approach as implemented in CALYPSO software have gained great success in accelerating the discovery of novel two-dimensional (2D) materials. Here we highlight some most recent research progress on the prediction of novel 2D structures, involving elements, metal-free and metal-containing compounds using CALYPSO package. Particular emphasis will be given to those 2D materials that exhibit unique electronic and magnetic properties with great potentials for applications in novel electronics, optoelectronics, magnetronics, spintronics, and photovoltaics. Finally, we also comment on the challenges and perspectives for future discovery of multi-functional 2D materials.

effect of carrier mobility on performance of perovskite solar cells

Abstract: The high carrier mobility and long diffusion length of perovskite material have been regarded because of its excellent photovoltaic performance. However, many studies have shown that a diffusion length longer than 1 μm and higher carrier mobility have no positive effect on the cells’ performance. Studies of organic solar cells have demonstrated the existence of an optimal mobility value, while systematic research of the carrier mobility in the PSCs is very rare. To make these questions clear, the effect of carrier mobility on perovskite solar cells’ performance is studied in depth in this paper by simulation.Our study shows that the optimal mobility value of the charge transportation layer and absorption layer are influenced by both doping concentration and layer thickness. The appropriate carrier mobility can reduce the carrier recombination rate and enhance the carrier concentration, thus improving the cells’ performance. A high efficiency of 27.39% is obtained in the simulated cell with the combination of the optimized parameters in the paper.

Efficient doping modulation of monolayer WS 2 for optoelectronic applications

Abstract: Transition metal dichalcogenides (TMDCs) belong to a subgroup of two-dimensional (2D) materials which usually possess thickness-dependent band structures and semiconducting properties. Therefore, for TMDCs to be widely used in electronic and optoelectronic applications, two critical issues need to be addressed, which are thickness-controllable fabrication and doping modulation of TMDCs. In this work, we successfully obtained monolayer WS2 and achieved its efficient doping by chemical vapor deposition and chemical doping, respectively. The n- and p-type dopings of the monolayer WS2 were achieved by drop coating electron donor and acceptor solutions of triphenylphosphine (PPh3) and gold chloride (AuCl3), respectively, on the surface, which donates and captures electrons to/from the WS2 surface through charge transfer, respectively. Both doping effects were investigated in terms of the electrical properties of the fabricated field effect transistors. After chemical doping, the calculated mobility and density of electrons/holes are around 74.6/39.5 cm2V−1s−1 and 1.0 × 1012/4.2 × 1011 cm−2, respectively. Moreover, we fabricated a lateral WS2 p–n homojunction consisting of non-doped n-type and p-doped p-type regions, which showed great potential for photodetection with a response time of 1.5 s and responsivity of 5.8 A/W at V G = 0 V and V D = 1 V under 532 nm light illumination.